LESHAN RADIO COMPANY, LTD.
LDTA114YET1-1/4
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
LDTA114YET1
1
3
2
SC-89
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
200 (Note 1)
300 (Note 2)
1.6 (Note 1)
2.4 (Note 2)
mW
Thermal Resistance
Junction-to-Ambient
R
JA
600 (Note 1)
400 (Note 2)
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +150
C
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
Pin 3
Collector
(Output)
Pin 2
Emitter
(Ground)
Pin 1
Base
(Input)
R
1
R
2
xx
= Specific Device Code
M
= Date Code
MARKING
DIAGRAM
3
2
1
XX M
mW/
C
Simplifies Circuit Design
Reduces Component Count
The SC-89 Package can be Soldered using Wave or Reflow.
Available in 8 mm, 7 inch/3000 Unit Tape & Reel
This is Pb-Free Device.
DEVICE MARKING AND ORDERING INFORMATION
Device Marking Package
Shipping
LDTA114YET1
6D
SC-89
(Pb-Free)
3000/Tape&Reel
Reduces Board Space
Version 1.0
LESHAN RADIO COMPANY, LTD.
LDTA114YET1-2/4
LDTA114YET1
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0 )
I
EBO
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
h
FE
80
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
0.25
Vdc
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
V
OL
0.2
Vdc
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Output Voltage (on)
7.0 10 13
Resistor Ratio
R
1
/R
2
0.17
0.21 0.25
Input Resistor
R
1
k
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
Output Voltage (off)
V
OH
Vdc
4.9
140
Version 1.0
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
JA = 600
C/W
LESHAN RADIO COMPANY, LTD.
LDTA114YET1-3/4
LDTA114YET1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
20
40
60
80
V CE(sat)
, MAXIMUM COLLECT
OR VOL
T
AGE (VOL
TS)
Figure 3. DC Current Gain
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 6. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25C
25C
TA = 75C
VCE = 10 V
180
160
140
120
100
80
60
40
20
0
2
4 6
8
15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25C
LOAD
+12 V
Figure 7. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25C
IC/IB = 10
TA = -25C
TA = 75C
25C
-25C
VO = 5 V
VO = 0.2 V
25C
TA = -25C
75C
75C
Version 1.0
LESHAN RADIO COMPANY, LTD.
G
M
0.08 (0.003)
X
D
3 PL
J
-X-
-Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
A
B
Y
1
2
3
N
2 PL
K
C
-T-
SEATING
PLANE
DIM
A
MIN
NOM
MIN
NOM
INCHES
1.50
1.60
1.70
0.059
MILLIMETERS
B
0.75
0.85
0.95
0.030
C
0.60
0.70
0.80
0.024
D
0.23
0.28
0.33
0.009
G
0.50 BSC
H
0.53 REF
J
0.10
0.15
0.20
0.004
K
0.30
0.40
0.50
0.012
L
1.10 REF
M
---
---
10
---
N
---
---
10
---
S
1.50
1.60
1.70
0.059
0.063
0.067
0.034
0.040
0.028
0.031
0.011
0.013
0.020 BSC
0.021 REF
0.006
0.008
0.016
0.020
0.043 REF
---
10
---
10
0.063
0.067
MAX
MAX
_
_
_
_
M
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
S
SC-8
9
LDTA114YET1
LDTA114YET1-4/4
Version 1.0
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