Digital transistors (built-in resistors)
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making device design easy.
PNP digital transistor
(Built-in resistor type)
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
1
2
3
SC-89
LDTA123JET1
MAXIMUM RATINGS
(TA = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR4 Board (Note 1.) @ TA = 25
C
Derate above 25
C
PD
200
1.6
mW
mW/
C
Thermal Resistance, Junction to Ambient (Note 1.)
R
JA
600
C/W
Total Device Dissipation,
FR4 Board (Note 2.) @ TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance, Junction to Ambient (Note 2.)
R
JA
400
C/W
Junction and Storage Temperature Range
TJ, Tstg
55 to +150
C
1. FR4 @ Minimum Pad
2. FR4 @ 1.0
1.0 Inch Pad
STRUCTURE:
FEATURES:
LDTA123JET1=6M
DEVICE MARKING
LESHAN RADIO COMPANY, LTD.
LESHAN RADIO COMPANY, LTD.
LDTA123JET1-1/3
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorBase Cutoff Current (VCB = 50 V, IE = 0)
ICBO
ICEO
IEBO
100
nAdc
500
nAdc
CollectorEmitter Cutoff Current (VCE = 50 V, IB = 0)
EmitterBase Cutoff Curren
(VEB = 6.0 V, IC = 0)
0.5
mAdc
CollectorBase Breakdown Voltage (IC = 10
A, IE = 0)
V(BR)CBO
50
Vdc
CollectorEmitter Breakdown Voltage (Note 3.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
Vdc
ON CHARACTERISTICS
(Note 3.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
hFE
80
140
CollectorEmitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
VCE(sat)
0.25
Vdc
http://onsemi.com
4
Input Resistor
R1
1.54
2.2
2.86
k
Resistor Ratio
R1/R2
0.038
0.047
0.056
Figure 1. Derating Curve
250
200
150
100
50
0
-50
0
50
100
150
TA, AMBIENT TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (MILLIW
A
TTS)
R
JA = 600
C/W
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED
TRANSIENT
THERMAL
RESIST
ANCE
t, TIME (s)
Figure 2. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
LESHAN RADIO COMPANY, LTD.
LESHAN RADIO COMPANY, LTD.
LDTA123JET1-2/3
LESHAN RADIO COMPANY, LTD.
LESHAN RADIO COMPANY, LTD.
LDTA123JET1-3/3
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
SC-89
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