LESHAN RADIO COMPANY, LTD.
Digital transistors (built-in resistors)
L
DTD114E
LT1
F
Features
1)Built-in bias resistors enable the
configuration of an
inverter circuit
without connecting external input resistors.
plete isolation to allow negative biasing of the input. They
2)The bias resistors consist of thin
film resistors with com-
also have the advantage of almost completely eliminat-
ing parasitic effects.
3)Only the on/off conditions need to
be set for operation,
making device
design easy.
1
3
2
SOT 23 (TO236AB)
LDTD114ELT1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R
1
R
2
F
Absolute maximum ratings (Ta = 25
_
C)
LDTD114ELT1G(Pb-Free)
3000/Tape&Reel
Parameter
Symbol
O
C
mW
mA
V
V
Unit
Limits
-55~+150
150
200
-10~+40
50
O
C
I
C
V
IN
Vcc
500
Pd
Tj
Tstg
Supply voltage
Input voltage
Output current
Storage temperature
Junction temperature
Power disspation
F
Electrical characteristics (Ta = 25C)
LDTD114ELT11/3
F
Device marking and ordering information
4)Pb-Free package is available.
LDTD114ELT1
Device
CA
CA
Marking
3000/Tape&Reel
Shipping
LESHAN RADIO COMPANY, LTD.
F
Electrical characteristic curves
LDTD114ELT12/3
LDTD114ELT1
LESHAN RADIO COMPANY, LTD.
LDTD114ELT13/3
D
J
K
L
A
C
B S
H
G
V
1
2
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MILLIMETERS
DIM
MIN
MAX
MIN
MAX
A
0.1102
0.1197
2.80
3.04
B
0.0472
0.0551
1.20
1.40
C
0.0350
0.0440
0.89
1.11
D
0.0150
0.0200
0.37
0.50
G
0.0701
0.0807
1.78
2.04
H
0.0005
0.0040
0.013
0.100
J
0.0034
0.0070
0.085
0.177
K
0.0140
0.0285
0.35
0.69
L
0.0350
0.0401
0.89
1.02
S
0.0830
0.1039
2.10
2.64
V
0.0177
0.0236
0.45
0.60
0.031
0.8
SOT-23
3
LDTD114ELT1
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