LESHAN RADIO COMPANY, LTD.
1
3
2
SC-59
LRB491T1
LRB491T1-1/3
SCHOTTKY BARRIER DIODE
FEATURE
Silicon epitaxial planar.
Small plastic SMD package.
High current capacity(I
F
=1.0A).
Ultra low V
F
. (V
F
=0.40V Typ. at 1A)
For switching power supply Applications.
Pb-Free Package is available.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LRB491T1
10T
3000/Tape&Reel
LRB491T1G
10T
(Pb-Free)
3000/Tape&Reel
MAXIMUM RATINGS(Ta=25
C)
Parameter
Symbol
V
RM
Limits
25
Unit
V
Peak reverse voltage
V
R
20
V
DC reverse voltage
I
F
1.0
A
DC forward current
I
FSM
3
A
Peak forward surge current
Tj
125
C
Junction temperature
Tstg
-
40
+
125
C
Storage temperature
60Hz for 1
ELECTRICAL CHARACTERISTICS(Ta=25
C)
Parameter
Forward voltage
Reverse current
Symbol Min. Typ. Max.
Unit Conditions
V
F
I
R
-
-
-
-
0.45
200
V
A
I
F
=1.0A
V
R
=20V
Note) ESD sensitive product handling required.
1
ANODE
3
CATHODE
LESHAN RADIO COMPANY, LTD.
LRB491T1-2/3
LRB491T1
0
0.2
0.3
0.4
0.5
0.6
0.1
0.1m
1m
100m
10m
10
1
FORWARD CURRENT :
I
F
(
A)
FORWARD
VOLTAGE : V
F
(V)
C
5
2
1
=
a
T
C
5
7
C
5
2
C
5
2
-
Fig.1 Forward characteristics
Fig.2 Reversecharacteristics
0
20
30
40
50
60
70
10
0.1
10
1
100
10
1
1000
100
REVERSE CURRENT :
I
R
(
mA)
REVERSE VOLTAGE : V
R
(V)
Ta=125C
75C
25C
-
25C
Fig.3 Capacitance between
terminals characteristics
0
10
15
20
25
30
35
40
5
1
10
1000
100
10000
TERMINAL CAPACITANCE :
C
T
(pF
)
REVERSE
VOLTAGE : V
R
(V)
f=1MHz
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.2
0.1
0.3
0.4
0.5
0.7
0.6
FOR
W
ARD PO
WER DISSIP
A
TION :
P
F
(
W)
AVERAGE RECTIFIED FORWARD CURRENT : I
O
(A)
D=0.05
D=0.1
D=0.2
D=0.3
D=0.8
DC
sine
D=0.5
Tp
T
D=Tp/T
Tj=Tj Max.
I
F
I
O
Fig.4 Forward power dissipation
characteristics
1.5
1.0
0.5
0
0
25
50
75
100
125
A
VERA
GE RECTIFIED FOR
W
ARD CURRENT :
I
O
(
A)
AMBIENT TEMPERATURE : Ta (C)
D
=
0.3
D
=
0.2
D=0.1
D=0.05
DC
D
=
0.5
D=0.8
sine
Tp
T
D
=
Tp/T
V
R
=
V
RM
/2
I
F
I
O
Fig.5 Derating curve (I
O
- Ta)
ELECTRICAL CHARACTERISTIC CURVES(Ta=25
C)
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