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LESHAN RADIO COMPANY, LTD.
H21/2
M1MA151KT1
M1MA152KT1
CASE 318D03, STYLE2
SC59
1
3
2
SC-59 PACKAGE
SINGLE SILICON
SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
Single Silicon Switching Diodes
MAXIMUM RATINGS
(T
A
= 2
5
C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA151KT1
V
R
40
Vdc
M1MA152KT1
80
Peak Reverse Voltage
M1MA151KT1
V
RM
40
Vdc
M1MA152KT1
80
Forward Current
I
F
100
mAdc
Peak Forward Current
I
FM
225
mAdc
Peak Forward Surge Current
I
FSM
(1)
500
mAdc
THERMAL CHARACTERISTICS
Rating
Symbo
lMax
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
C
Storage Temperature
T
stg
-55 to +150
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current M1MA151KT1
I
R
V
R
= 35 V
--
0.1
Adc
M1MA152KT1
V
R
= 75 V
--
0.1
Forward Voltage
V
F
I
F
= 100 mA
--
1.2
Vdc
Reverse Breakdown Voltage
M1MA151KT1
V
R
I
R
= 100
A
40
--
Vdc
M1MA152KT1
80
--
Diode Capacitance
C
D
V
R
= 0, f = 1.0 MHz
--
2.0
pF
Reverse Recovery Time
t
rr
(2)
I
F
= 10 mA, V
R
= 6.0 V,
--
3.0
ns
R
L
= 100
, I
rr
= 0.1 I
R
1. t = 1 SEC
2. t
rr
Test Circuit
2 1
ANODE NO CONNECTION
CATHODE
3
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the SC-
59 package which is designed for low power surface mount applications.
Fast t rr , < 3.0 ns
Low C
D
, < 2.0 pF
Available in 8 mm Tape and Reel
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
LESHAN RADIO COMPANY, LTD.
H22/2
M1MA151KT1 M1MA152KT1
R
L
t
r
t
p
t
10%
90%
V
R
t
p
= 2
s
t
r
= 0.35 ns
I
F
t
rr
t
I
rr
= 0.1 I
R
I
F
= 10 mA
V
R
= 6 V
R
L
= 100
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
Marking Symbol
MH
X
Type No.
1 5 1 K
1 5 2 K
Symbol
M H
M I
The "X" represents a smaller alpha digit Date Code. The Date Code
indicates the actual month in which the part was manufactured.
DEVICE MARKING--EXAMPLE