Specifications subject to change without notice.
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Typical Performance @ 25C
Guaranteed
Characteristics
Typical
0
to 50
C
-54
to +85
C
Frequency
Small Signal Gain (min.)
Gain Flatness (max.)
Reverse Isolation
Noise Figure (max.)
Power Output @ 1 dB comp. (min.)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max.)
DC Current @ 15 Volts (max.)
Absolute Maximum Ratings
Storage Temperature
Max. Case Temperature
Max. DC Voltage
Max. Continuous RF Input Power
Max. Short Term RF Input Power (1 minute max.)
Max. Peak Power (3
sec max.)
"S" Series Burn-in Temperature (Case)
Thermal Data: V
cc
= 15 Vdc
Thermal Resistance
jc
Transistor Power Dissipation P
d
Junction Temperature Rise Above Case T
jc
Outline Drawings
Package TO-8 Surface Mount SMA Connectorized
Figure
Model
HIGH GAIN: 17.5 dB (TYP.)
LOW NOISE: 4.5 dB (TYP.)
HIGH OUTPUT POWER: +19.5 dBm (TYP.)
GaAs FET DESIGN
A45/SMA45
1000 TO 4000 MHz
CASCADABLE AMPLIFIER
Specifications (Rev. Date: 1/01)*
* Measured in a 50-ohm system at +15 Vdc Nominal. Subject to change without notice.
BG
AA
CE
1.0-4.0 GHz
17.5 dB
0.6 dB
36 dB
4.0 dB
19.5 dBm
+29 dBm
+39 dBm
+44 dBm
1.8:1 / 1.7:1
120 mA
1.0-4.0 GHz
16.5 dB
0.8 dB
17.0 dBm
5.0 dB
18.0 dBm
2.2:1 / 2.2:1
130 mA
2.1:1 / 2.1:1
125 mA
1.0-4.0 GHz
15.5 dB
1.0 dB
5.5 dB
-65 to +125C
85C
+16 Volts
+13 dBm
100 mW
0.25 W
85C
131C/W
0.497 W
65C
A45
SMA45
CA45
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