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Электронный компонент: AT-635TR

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V 3.00
Features
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35 dB Voltage Variable Attenuation @ 1 GHz
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Single Voltage Control 0 to -4 Volts
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Low DC Power Consumption: 10 mW
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Nanosecond Switching Speed
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Temperature Range: -40C to +85C
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Low Cost SOIC14 Plastic Package
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Tape and Reel Packaging Available
1
Description
M/A-COM's AT-635 is a GaAs MMIC voltage variable absorptive
attenuator in a low cost SOIC 14-lead surface mount plastic pack-
age. The AT-635 is ideally suited for use where attenuation fine
tuning, fast switching and very low power consumption are
re q u i red. Typical applications include radio, cellular, GPS equip-
ment and other Automatic Gain/Level Control circ u i t s .
The AT-635 is fabricated with a monolithic GaAs MMIC using a
m a t u re 1-micron process. The process features full chip passiva-
tion for increased perf o rmance and re l i a b i l i t y .
Vo l t age Va r i a ble Absorptive Attenu a t o r, 35 dB
DC - 2 GHz
AT-635
S O - 1 4
Parameter
Test Conditions
2
Unit
Min.
Typ.
Max
Insertion Loss
DC 0.1 GHz
dB
6.5
6.7
DC 0.5 GHz
dB
6.7
7.0
DC 1.0 GHz
dB
7.2
7.4
DC 2.0 GHz
dB
7.5
7.8
Flatness DC-2 GHz
10 dB Attenuation
dB
+/-1.0
+/-1.3
(Peak to Peak)
20 dB Attenuation
dB
+/-1.2
+/-1.5
30 dB Attenuation
dB
+/-1.2
+/-1.5
VSWR
2.0:1
Trise, Tfall
10% to 90% RF, 90% to 10% RF
nS
2
Ton, Toff
50% Control to 90% RF, 50% Control to 10% RF
nS
4
Transients
In Band
mV
30
Power
Linear Operation
dBm
13
Handling
Absolute Max Input Power
dBm
21
Measured Relative
0.05 GHz
dBm
34
IP2
to Input Power
0.5 2.0 GHz
dBm
47
(for two-tone input power up to +5 dBm)
Measured Relative
0.05 GHz
dBm
18
31
(3)
IP3
to Input Power
0.5 2.0 GHz
dBm
18.5
36
(3)
(for two-tone input power up to +5 dBm)
Electrical Specifications, T
A
= +25C
1.Refer to "Tape and Reel Packaging"Section, or contact factory.
2.All measurements at 1 GHz in a 50
system, unless otherwise specified.The A control voltage 0 to -4 volts @ 20 A typ.
3. For levels above 6 dB attenuation. For levels below 6 dB, the minimum specification numbers apply.
Ordering Information
Part Number
Package
AT-635 PIN SOIC 14-Lead Plastic Package
AT-635TR Forward Tape & Reel
V 2.00
Voltage Variable Absorptive Attenuator, 35 dB
AT-635
Functional Sch e m a t i c
Absolute Maximum Ratings
1
1.Operation of this device above any one of these parameters ma y
cause permanent damage.
Parameter
Absolute Maximum
Max. Input Power
+21 dBm
Control Voltage
+5 V, -8.5 V
Operating Temperature
-40C to +85C
Storage Temperature
-65C to +150C
Pin Configuration
Pin No.
Description
1
A
2
GND
3
GND
4
GND
5
GND
6
GND
7
GND
Pin No.
Description
8
RF2
9
GND
10
GND
11
GND
12
GND
13
GND
14
RF1
Typical Pe r fo r m a n c e