MA02104AF
3.6V 1.2W RF Power Amplifier IC
for N-PCS/ISM900
Specifications subject to change without notice.
901753 G
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
Applications
Two-Way
Paging
Wireless
Modems
Cordless
Telephones
Telemetry
900 MHz ISM
Features
=
Single Positive Supply
=
16 Pin TSSOP Plastic Package
=
Class AB Bias
=
800 - 1000 MHz Operation
=
50
Input Impedance
=
Single Capacitor Output Match
=
Self-Aligned MSAG
-Lite MESFET Process
=
Guaranteed Stability and Ruggedness
Typical 3.6 Volt Performance
30.8 dBm Power Output
30.8 dB Power Gain
60% Drain Efficiency
(output stage FET)
45% Power Added Efficiency
-36 dBc 2
nd
Harmonic
-54 dBc 3
rd
Harmonic
V
DD2
GND
GND
GND
RF OUT/V
DD3
GND
GND
N/C
V
DD1
N/C
GND
GND
RF IN
GND
GND
N/C
ELECTRICAL CHARACTERISTICS
V
DD
=3.6 V, P
IN
=0 dBm, T
S
=40 C (Note 1), Output externally matched to 50
System.
Characteristic Symbol
Min
Typical
Max
Unit
Frequency Range
900
942
MHz
Output Power,
f = 900 MHz
P
OUT
30.4 30.9 31.5 dBm
Power Added Efficiency
, f = 900 MHz
40 45 %
Harmonics
2
o
3
o
-
36
-
54
-31
-40
dBc
dBc
Input VSWR
--
1.4:1
2.0:1
--
Thermal Resistance
(Junction of 3
rd
stage FET to solder point of
pin 13)
R
TH J-S
47 C/W
Load Mismatch
(V
DD
= 4.6 V, P
IN
= +3 dBm, VSWR = 8:1)
--
No Degradation in Power Output
Stability
(P
IN
= -15 to +3 dBm, V
DD
= 3.6, 4.6 V, T
S
= -40 to +100
C,
Load VSWR = 8:1)
--
All non-harmonically related outputs
more than 60 dB below desired signal
Note 1: T
S
is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with
ambient room temperature T
A
=25 C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 and 6,
under room temperature conditions and CW operation, unless otherwise specified.
3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900
MA02104AF
Specifications subject to change without notice.
901753 G
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
MAXIMUM RATINGS
(T
A
= 25 C unless otherwise noted)
Rating Symbol
Value
Unit
DC Supply Voltage
(Pins 1, 12, 16)
V
DD
5 Vdc
RF Input Power
P
IN
4 mW
Junction Temperature
T
J
150 C
Storage Temperature Range
T
STG
-40 to +150
C
APPLICATION INFORMATION
RF INPUT
+V
DD
(+3.6V)
RF OUTPUT
C1
C2
T1
L1
C5
C4
N/C
N/C
N/C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
C3
Figure 1. Evaluation Board Schematic
List of components:
C1 = 0.1F Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 7.5 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.13" of 50
==
grounded coplanar waveguide (60 mil GETEK board)
Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 6.
3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900
MA02104AF
Specifications subject to change without notice.
901753 G
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
35
40
-10
-5
0
5
P
IN
, Input Power (dBm)
P
OU
T
, O
u
tput Power
(
d
Bm)
0
10
20
30
40
50
60
70
80
,
=
Pwr
Added Effi
c
i
enc
y
=
(%
)
P
OUT
= 920 MHz
V
DD
= 3.6 V
0
10
20
30
40
50
60
800
850
900
950
1000
,
=
Frequency (MHz
)
P
OU
T
(
d
Bm)
and
(%
)
1:1
2:1
3:1
VSWR
P
OUT
Figure 2. Output power and efficiency vs. input power
Figure 3. Output power, efficiency and input VSWR vs .
frequency
0
5
10
15
20
25
30
35
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
DD
, Supply Voltage
(Volts)
P
OU
T
, O
u
tput Pow
e
r
dBm)
0
10
20
30
40
50
60
70
80
, Pw
r
Added Effi
c
i
enc
y
(
%
)
P
OUT
= 920 MHz
P
IN
= 0 dBm
-40
-30
-20
-10
0
10
20
30
40
2
3
4
5
Frequency
P
OU
T
, O
u
tput Power
(
d
Bm)
= 920 MHz
P
IN
= 0 dBm
V
DD
= 3.6 V
Figure 4. Output power and efficiency vs. supply
voltage
Figure 5. Harmonics
3.6V 1.2W RF Power Amplifier IC for N-PCS/ISM900
MA02104AF
Specifications subject to change without notice.
901753 G
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
MECHANICAL DATA
Top view
50
lead transition
Figure 6. Component layout and printed circuit drawing for evaluation board
0
0.2
0.5
1
180
17
0
-80
-90
-10
0
-11
0
-12
0
-1
30
-1
40
-1
50
-1
60
-1
70
800 MHz
1000 MHz
915 MHz
7.2 - j11.2
Figure 7. Output match impedance (as seen from pin 12)
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