Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
1
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC
V 1.0
Features
Ideal for Pager Applications
+30.8 dBm Output Power
30.8 dB Power Gain
Single Positive Supply
Class AB Bias
50 Ohm Input Impedance
Single Capacitor Output Match
Description
The MA02107AF is a three stage power amplifier,
designed for paging applications to have an output
power of +30.8 dBm with an input power of 0 dBm.
This power amplifier operates at +3.4 volts with
55% typical power added efficiency. The
MA02107AF is mounted in a standard outline 16-pin
TSSOP plastic package.
The MA02107AF is fabricated using M/A-COM's
self-aligned MSAG
-Lite MESFET process for a low
single supply voltage, high power efficiency, and
excellent reliability.
Ordering Information
Part Number
Description
MA02107AF-R7
7 inch, 1000 piece reel
MA02107AF-R13
13 inch, 3000 piece reel
MA02107AF-SMB
Sample Test Board
Functional Schematic
V
DD2
GND
GND
GND
RF OUT/V
DD3
GND
GND
N/C
V
DD1
N/C
GND
GND
RF IN
GND
GND
N/C
Pin Configuration
Pin
Function
Description
1
V
DD1
First Stage Supply Voltage
2
N/C
Not Connected
3
GND
Ground
4
GND
Ground
5
RF
IN
RF Input
6
GND
Ground
7
GND
Ground
8
N/C
Not Connected
9
N/C
Not Connected
10
GND
Ground
11
GND
Ground
12
RF
OUT
/V
DD3
RF Output/Third Stage Supply
13
GND
Ground
14
GND
Ground
15
GND
Ground
16
V
DD2
Second Stage Supply Voltage
MA02107AF
Part Description
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
2
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC
MA02107AF
V 1.0
Electrical Specifications: T
S
= 35 C
1
, Z
0
= 50
2,3
Parameter
Test Conditions
Units
Min
Typ
Max
Frequency
MHz
900
942
Output Power
dBm
30.0
30.8
Power Gain
dB
30.8
Power Added Efficiency
%
45
55
Input Return Loss
dB
10
15
2
nd
Harmonics
dBc
-35
-29
3
rd
Harmonics
dBc
-50
-45
Thermal Resistance
3
rd
Stage FET to solder point of pin 13
o
C/W
41
Stability
+3.0 V < V
CC
< +5.0 V, P
OUT
< +31 dBm,
VSWR < 5:1, -40C < T
C
< +85C, RBW
= 3 MHz max hold
All spurs < -60 dBc
1. Ts is the temperature measured at the soldering point of pin 13.
2. Unless otherwise specified, input power is 0 dBm, V
DD
is +3.45 V, and test frequency is 900 MHz.
3. The output is externally matched to 50 ohms.
Absolute Maximum Ratings
1
Parameter
Absolute Maximum
Max Input Power
+6 dBm
Operating Voltages
+5.0 volts
Operating Temperature, Ts
-40 C to +70 C
Channel Temperature
+150 C
Storage Temperature
-40 C to +150 C
1. Exceeding any one or combination of these limits may cause permanent damage.
Application Information
Static Sensitivity
Gallium arsenide integrated circuits are ESD sensitive and can be damaged by static electricity. Use proper ESD precautions when
handling these devices.
Board Layout
Sample Test Board
50 Ohm Lead Transition
Part Description
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
3
Visit www.macom.com for additional data sheets and product information.
3.4 V, 1.2 W RF Power Amplifier IC
MA02107AF
V 1.0
Output Match Impedance (as seen from pin 12)
0
0.2
0.5
1
180
170
-80
-90
-100
-110
-120
-130
-140
-150
-160
-170
850 MHz
925 MHz
900 MHz
8.4 - j9.2
Typical Performance Curves
Output Power and PAE vs. Input Power
10
15
20
25
30
35
40
-10
-5
0
5
P
IN
, Input Power (dBm)
P
OUT
, Output Power (dBm)
0
10
20
30
40
50
60
Pwr Added Efficiency
P
OUT
= 901 MHz
V
DD
= 3.4 V
Output Power and PAE vs. Supply Voltage
0
5
10
15
20
25
30
35
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DD
, Supply Voltage
(Volts)
P
OUT
, Output Power (dBm)
0
10
20
30
40
50
60
70
, Pwr Added Efficiency (%)
P
OUT
= 901 MHz
P
IN
= 0 dBm
Output Power, PAE, and VSWR vs. Fequency
0
10
20
30
40
50
60
800
850
900
950
1000
,
Frequency (MHz
)
P
OUT
(dBm) and
(%)
1:1
2:1
3:1
VSWR
P
OUT
Harmonics
-40
-30
-20
-10
0
10
20
30
40
2
3
4
5
Frequency
P
OUT
, Output Power (dBm)
= 901 MHz
P
IN
= 0 dBm
V
DD
= 3.4 V
Part Description
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
4
3.4 V, 1.2 W RF Power Amplifier IC
MA02107AF
V 1.0
Application Schematic
RF INPUT
+V
DD
(+3.4V)
RF OUTPUT
C1
C2
T1
L1
C5
C4
N/C
N/C
N/C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
C3
List of components:
C1 = 0.1F Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 6.8 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.19" of 50 ohm grounded coplanar waveguide (60 mil GETEK board)
TSSOP-16 Package
Dimensions in
millimeters
Dimensions in inches
SYMBOL MIN
NOM MAX
MIN
NOM
MAX
A
1.05
1.10
1.20 0.041 0.043 0.047
A1
0.05
0.10
0.15 0.002 0.004 0.006
A2
--
1.00
1.05
--
0.039 0.041
b
0.20
0.25
0.28 0.008 0.010 0.011
C
--
0.127
--
--
0.005
--
D
4.90 5.075 5.10 0.193 0.200 0.201
E
6.20
6.40
6.60 0.244 0.252 0.260
E1
4.30
4.40
4.50 0.169 0.173 0.177
e
--
0.65
--
--
0.025
--
L
0.50
0.60
0.70 0.020 0.024 0.028
L1
0.90
1.00
1.10 0.035 0.039 0.043
y
--
--
0.10
--
--
0.004
0
4
8
0
4
8
NOTES:
1. Controlling dimension: mm
2. Lead frame material: EFTEC 64
3. Dimension "D" does not include mold flash, protrusions or gate burrs
4. Dimension "E" does not include interlead flash or protrusions
5. Tolerance: 0.254 mm (
0.010
) unless otherwise specified
6. End flash max: 0.12 mm (0.005
)
PDF 
ZIP