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Электронный компонент: MA02204AF

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MA02204AF
3.3V 0.5W RF Power Amplifier IC
for DECT
Specifications subject to change without notice.
901642 K
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
Applications
DECT
PCS
Personal Wireless Telephony (PWT)
Cordless
PBX
Radio/Wireless Local Loop (RLL/WLL)
Features
=
Single Positive Supply
=
16 Pin TSSOP Plastic Package
=
Class AB Bias
=
1700 to 2200 MHz Operation
=
50
Input Impedance
=
Simple Output Match
=
Accommodates Battery Charging Conditions up to 5 Volts
=
Self-Aligned MSAG
-Lite MESFET Process
=
Guaranteed Stability and Ruggedness
V
DD2
GND
GND
GND
RF
OUT
/V
DD3
GND
GND
N/C
V
DD1
N/C
GND
GND
RF
IN
GND
GND
N/C
Typical 3.3 Volt Performance
27 dBm Output Power
32 dB Power Gain
42% Power Added Efficiency
-40 dBc 2
nd
Harmonic
-45 dBc 3
rd
Harmonic

ELECTRICAL CHARACTERISTICS
V
DD
= 3.3 V, P
IN
= -5 dBm, T
S
=55 C (Note 1), Output externally matched to 50
Characteristic Symbol
Min
Typ
Max
Unit
Frequency Range
1880
1905
1930 MHz
Output Power
P
OUT
26 27 28 dB
Power Gain
G
P
31 32 33
dB
Power Added Efficiency
38 42 -- %
Drain Current
I
DD
-- 360
470
mA
Harmonics 2
o
3
o
--
--
-40
-45
-34
-38
dBc
dBc
Input VSWR
--
--
1.3:1
2.0:1
--
Off Isolation
(V
DD
=0 V)
--
35
40
--
dB
Thermal Resistance
(Junction of 3
rd
stage FET to solder point of pin 13)
R
TH J-S
-- --
60 C/
W
Load Mismatch
(V
DD
= 5 V, VSWR = 6:1, P
IN
= +5 dBm)
--
No Degradation in Power Output
Stability
(P
IN
= -6 to +5 dBm, V
DD
= 0-5 V, T
S
= -40 to +85
C, Load VSWR = 6:1)
--
All non-harmonically related outputs
more than 60 dB below desired signal
Note 1: T
s
is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with
ambient room temperature T
A
=25C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 & 6, under
room temperature conditions , operating at 500 mW of load power (V
DD
= 3.3 V), unless otherwise specified.
3.3V 0.5W RF Power Amplifier IC for DECT
MA02204AF
Specifications subject to change without notice.
901642 K
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
MAXIMUM RATINGS
(T
A
= 25 C unless otherwise noted)
Rating Symbol
Value
Unit
DC Supply Voltage
(Pins 1, 12, 16)
V
DD
5 Vdc
RF Input Power
P
IN
3 mW
Junction Temperature
T
J
150 C
Storage Temperature Range
T
STG
-40 to +150
C

APPLICATION INFORMATION
RF INPUT
+V
DD
(+3.3V)
RF OUTPUT
C1
C2
T1
L1
C3
C4
N/C
N/C
N/C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
T2
Figure 1. Evaluation Board Schematic

List of components:
C1 = 0.1F Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C3 = 6.2 pF DLI multilayer ceramic chip capacitor (C11AH6R2B5TXL)
C4 = 2 pF DLI multilayer ceramic chip capacitor (C11AH2R0B5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.10" of 50
==
grounded coplanar waveguide (60 mil GETEK board)
T2 = 0.07" of 50
==
grounded coplanar waveguide (60 mil GETEK board)


Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 6.
3.3V 0.5W RF Power Amplifier IC for DECT
MA02204AF
Specifications subject to change without notice.
901642 K
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
TYPICAL CHARACTERISTICS
0
5
10
15
20
25
30
-6 -5 -4 -3 -2 -1 0
1
2
3
4
5
P
IN
, Input Pow er (dBm)
P
OUT
,
Out
put
Pow
e
r (dBm
)
0
10
20
30
40
50
60
Pw
r Added Ef
f
i
c
i
enc
y
(%)
P
OUT
V
DD
= 3.3 V
= 1900 MHz
0
10
20
30
40
50
60
1700
1800
1900
2000
2100
2200
,
=
Frequency (MHz
)
P
OUT
(
d
B
m
)
and
(%)
1:1
2:1
3:1
Input V
S
W
R
VSWR
P
OUT
V
DD
= 3.3 V
P
IN
= -5 dBm
Figure 2. Output power and efficiency vs. input power
Figure 3. Output power, efficiency and input VSWR vs.
frequency
0
5
10
15
20
25
30
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V
DD
, Supply Voltage
(Volts)
P
OUT
, O
utput Power (dBm)
0
10
20
30
40
50
60
, Pwr Added Effic
i
enc
y
(%)
P
OUT
= 1900 MHz
P
IN
= -5 dBm
-40
-30
-20
-10
0
10
20
30
40
2
3
4
5
Frequency
P
OU
T
, O
u
tp
u
t
Po
w
e
r
(
d
Bm)
o
= 1900 MHz
P
IN
= -5 dBm
V
DD
= 3.3 V
Figure 4. Output power and efficiency vs. supply
voltage
Figure 5. Harmonics
3.3V 0.5W RF Power Amplifier IC for DECT
MA02204AF
Specifications subject to change without notice.
901642 K
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
MECHANICAL DATA
Top view
50
lead transition
Figure 6. Component layout and printed circuit drawing for evaluation board

0
0.2
0.5
1
180
17
0
-80
-90
-10
0
-11
0
-12
0
-1
30
-1
40
-1
50
-1
60
-1
70
1900 MHz
14.6 -j27.8
1800 MHz
2100 MHz
Figure 7. Output match impedance (as seen from pin 12)