MA02206GJ
3.6V 0.5W RF Power Amplifier IC
for DECT
Specifications subject to change without notice.
902407 E
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
FEATURES
=
Single Positive Supply
=
57% Power Added Efficiency
=
Operation down to 1.2 V
=
100% Duty Cycle
=
1800 to 2000 MHz Operation
=
8 Pin Full Downset MSOP Plastic Package
=
Accommodates Battery Charging Conditions up to
5.6 Volts
=
Self-Aligned MSAG
-Lite MESFET Process
8 Lead MSOP Package
Package bottom is electrical and thermal ground
DESCRIPTION
MAXIMUM RATINGS
(Beyond these limits, the device may be damaged or device
reliability reduced. Functional operation at absolutemaximumrated conditions is not implied.)
Rating Symbol
Value
Unit
DC Supply Voltage
V
DD
6.0 V
RF Input Power
P
IN
10 mW
Junction Temperature
T
J
150 C
Storage Temperature Range
T
STG
-40 to +150
C
Operating Temperature
Range
T
OPER
-40 to +100
C
The MA02206GJ is a DECT Power amplifier
based on M/A-COM's Self-Aligned MSAG
MESFET Process. This product is designed
for use in 3.6 V DECT handsets and base
stations.
Moisture Sensitivity
JEDEC Level 1
ELECTRICAL CHARACTERISTICS
V
DD
= +3.6 V, P
IN
= -2 dBm, Duty Cycle = 100 %, T
S
= 37 C (Note 1), measured on evaluation
board shown in Figure 9.
Characteristic Symbol
Min
Typ
Max
Unit
Frequency Range
1880
1900
1930
MHz
Output Power
(1900 MHz)
P
OUT
25.9 26.9 27.9 dBm
Power Added Efficiency
(1900 MHz)
52 57 %
Drain Current
(1900MHz)
I
DD
228
330
mA
Harmonics
2
o
3
o
-37
-38
-30
-34
dBc
Input VSWR
--
1.3:1
2.0:1
--
Off Isolation
(V
DD
=0 V)
--
38
44
dB
Thermal Resistance,
Junction to soldering point (T
s
) (Note 1)
--
25
C/W
Load Mismatch
(V
DD
= 4.5 V, VSWR = 5:1, P
IN
= -2 dBm)
--
No Degradation in Power Output
Stability
(P
IN
= -2 to 2 dBm, V
DD
= 0-5.0 V, Load VSWR = 5:1, all phases)
--
All non-harmonically related outputs more than
60 dB below desired signal
Note 1: T
s
is the temperature measured at the soldering point of the downset paddle on the bottom of the IC.
Note 2: Output power and efficiency have been optimized for input drive levels between 2 to +2 dBm. Stability is only specified within this range. For
operation outside of this range, contact the factory.
3.6V 0.5W RF Power Amplifier IC for DECT
MA02206GJ
Specifications subject to change without notice.
902407 E
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
TYPICAL CHARACTERISTICS
(Measured data from process nominal devices)
0
1
2
3
4
5
6
-50
0
50
100
150
Temperature, T
S
(C)
P
DIS
S
(W
)
=
I
DD
3
*
V
DD
3
- P
OU
T
0
5
10
15
20
25
30
35
40
45
50
55
60
65
1800
1850
1900
1950
2000
Frequency (MHz)
P
o
ut
(
d
B
m
)
an
d P
A
E
(
%
)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
VS
W
R
PAE
P
OUT
VSWR
V
DD
= 3.6 V
P
IN
= -2 dBm
Figure 1. Maximum operating temperature (T
S
) to
maintain <150C junction temperature.
Figure 2. Output power, power added efficiency, and
input VSWR vs. frequency
0
5
10
15
20
25
30
0
1
2
3
4
5
6
Supply Voltage (Volts)
P
OU
T
(d
B
m
)
0
10
20
30
40
50
60
70
PAE (
%
)
PAE
P
OUT
P
IN
= -2 dBm
f = 1900 MHz
-30
-20
-10
0
10
20
30
2
3
4
5
V
DD
= 3.6 V
P
IN
= -2 dBm
f
o
= 1900 MHz
Figure 3. Output power and power added efficiency vs.
supply voltage
Figure 4. Harmonics
3.6V 0.5W RF Power Amplifier IC for DECT
MA02206GJ
Specifications subject to change without notice.
902407 E
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
TYPICAL CHARACTERISTICS
(Measured data from process nominal devices)
0
5
10
15
20
25
30
-50
0
50
100
Temperature T
S
(C)
P
OU
T
(d
B
m
)
0
50
100
150
200
250
300
I
DD
(m
a
)
P
OUT
I
DD
P
IN
= -2 dBm
V
DD
= 3.0 V
Freq=1900 MHz
0
5
10
15
20
25
30
-50
0
50
100
Temperature T
S
(C)
P
OU
T
(d
B
m
)
0
50
100
150
200
250
300
I
DD
(m
a)
P
OUT
I
DD
P
IN
= -2 dBm
V
DD
= 3.2 V
Freq=1900 MHz
Figure 5. Output power and drain current vs.
temperature at V
DD
=+3.0V
Figure 6. Output power and drain current vs.
temperature at V
DD
=+3.2V
0
5
10
15
20
25
30
-50
0
50
100
Temperature T
S
(C)
P
OU
T
(d
B
m
)
0
50
100
150
200
250
300
I
DD
(m
a
)
P
OUT
I
DD
P
IN
= -2 dBm
V
DD
= 3.6 V
Freq=1900 MHz
Figure 7. Output power and drain current vs.
temperature at V
DD
=+3.6V
3.6V 0.5W RF Power Amplifier IC for DECT
MA02206GJ
Specifications subject to change without notice.
902407 E
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
APPLICATION INFORMATION
RF
IN
+V
DD
RF
OUT
L3
C6
C5
1
2
3
4
5
6
7
8
T2
C2
C4
C1
T1
L1
R1
T3
T4
T5
T6
L2
C3
Full-Downset Paddle
To Board Ground
T7
T8
Figure 8. Evaluation Board Schematic
List of components:
Transmission Lines (Grounded Coplanar Waveguide)
C1 = 0.7 pF multilayer ceramic chip capacitor
T1 = 0.140" 50
C2 = C3 = C4 = C6 = 100 pF multilayer ceramic chip capacitor T2 = 0.110" 50
C5 = 2.2 pF multilayer ceramic chip capacitor
T3 = 0.100" 50
L1 = 2.7 nH chip inductor
T4 = 0.400" 75
L2 = 3.3 nH chip inductor
T5 = 0.195" 50
L3 = 27 nH chip inductor
T6 = 0.280" 50
R1 = 300
chip resistor
T7=78 = 0.090" 75
=
60 mil GETEK Board
Figure 9. Evaluation Board Layout
Figure 10. 50
Lead Transition
3.6V 0.5W RF Power Amplifier IC for DECT
MA02206GJ
Specifications subject to change without notice.
902407 E
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
DESIGNING WITH THE MA02206GJ
The MA02206GJ is built using a near-enhancement mode FET that operates from a single supply voltage. A negative
voltage is not required because the FET is designed to operate with a +0V DC gate bias.
There is no impedance matching or RF choking on this IC these functions are supplied externally. This
approach offers the highest level of performance, the lowest bill of materials cost, and far fewer components
than a discrete design.
Output power and efficiency have been optimized for DECT conditions. Input power must be kept between 2 and
+2dBm.
To duplicate MA02206GJ data sheet performance, your circuit board must recreate the same impedances developed on
this evaluation board. The table below has one-port s-parameter measurements looking into the traces on the evaluation
board. S-parameters of the MA02206GJ are not supplied because the device is designed to operate under large-signal
conditions.
Freq
V
DD1
Pin 1
RF
IN
/V
GG1
Pin 2
V
GG2
Pin 4
RF
OUT
/V
DD3
Pin 7
V
DD2
Pin 8
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.2 0.98045
178.38
0.15583
92.45 0.98634
159.96 0.53341
119.98 0.99255
178.98
0.3 0.94299
158.86
0.34874 -79.64 0.99012
150.97 0.32398
106.05 0.97095
163.41
0.4 0.97932 -171.16
0.61727
89.09 0.98896
141.89 0.20397
98.78 0.98118 -178.46
0.5 0.98910 -178.37
0.53105
68.98 0.98414
132.81 0.10550
90.87 0.98448 -176.22
0.6 0.99498
177.21
0.81116
49.51 0.98671
124.13 0.01912
95.87 0.99955
176.46
0.7 0.99236
174.45
0.87096
32.24 0.98308
115.73 0.05548 -108.06 0.99916
173.24
0.8 0.99399
172.25
0.84304
20.09 0.98482
107.57 0.12170 -111.09 1.00072
170.74
0.9 0.99541
170.17
0.86887
16.78 0.98514
99.90 0.18593 -116.17 1.00140
168.47
1.0 0.99503
168.20
0.87209
9.18 0.98562
92.35 0.24519 -121.18 1.00119
166.28
1.1 0.99279
166.32
0.87044
1.42 0.97997
85.32 0.30304 -126.47 0.99926
164.20
1.2 0.99285
164.31
0.83274
-4.47 0.98220
78.49 0.35920 -131.80 0.99991
161.99
1.3 0.99423
162.46
0.80852 -11.26 0.98249
72.12 0.41315 -137.20 0.99956
159.92
1.4 0.98574
159.89
0.74573 -16.03 0.98284
65.97 0.46330 -142.60 0.99277
157.02
1.5 0.88116
157.23
0.66751 -21.70 0.97828
60.11 0.51088 -148.03 0.86762
154.31
1.6 0.97552
161.35
0.60211 -24.92 0.98255
54.23 0.55789 -153.43 0.98555
158.39
1.7 0.98767
158.42
0.53753 -28.44 0.98167
48.79 0.59900 -158.95 0.99642
155.25
1.8 0.99039
156.35
0.45804 -27.44 0.98173
43.48 0.63867 -164.21 0.99918
152.78
1.9 0.99244
154.61
0.41128 -25.54 0.98234
38.27 0.67512 -169.36 1.00119
150.69
2.0 0.98742
152.93
0.36682 -20.92 0.97956
33.43 0.70454 -174.44 0.99355
148.30
2.1 0.99010
151.31
0.34855 -16.52 0.97866
28.52 0.73360 -178.67 0.88062
147.26
2.2 0.98911
149.68
0.32313 -13.38 0.97966
23.87 0.76239
175.86 0.99684
146.97
2.3 0.99139
148.11
0.30695
-8.01 0.98028
19.13 0.78572
171.11 1.00029
144.53
2.4 0.98809
146.33
0.30024
-0.16 0.97910
14.65 0.80560
166.68 1.00005
142.46
2.5 0.99058
144.56
0.32491
3.85 0.97652
10.29 0.82474
162.24 1.00010
140.35
2.6 0.98513
142.80
0.32429
4.54 0.97751
5.87 0.83818
157.93 0.99560
138.31
2.7 0.98991
140.66
0.31415
7.56 0.97715
1.53 0.86018
153.55 0.99891
136.04
2.8 0.97904
138.58
0.31418
14.28 0.97600
-2.68 0.87076
149.33 0.98388
133.36
2.9 0.94926
136.15
0.33349
18.76 0.97526
-7.00 0.88376
145.18 0.95012
130.27
3.0 0.90603
138.55
0.36476
23.39 0.97179
-11.28 0.89423
141.16 0.86390
133.79
3.1 0.96258
137.61
0.43170
21.35 0.96761
-15.40 0.90136
136.54 0.95789
133.92
3.2 0.97824
135.30
0.42416
18.54 0.96919
-19.53 0.90933
132.45 0.97992
130.74
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