250 mW L-Band Power Amplifier,
1.4 - 1.55 GHz
MA05515
-
DIE
OUTLINE DRAWING
V 1P.00
Preliminary
Features
High Linear Gain: 32 dB typ.
High Saturated Output Power: +24 dBm typ.
High Power Added Efficiency: 41% typ.
50 Ohm Input/Output Matched
InGaP HBT Process
Description
M/A-COM's MA05515-DIE is a two-stage MMIC
power amplifier in die form. The MA05515-DIE has
fully matched input and output networks. The
MA05515-DIE is designed to operate from a constant
voltage collector supply. By varying the bias conditions,
the saturated output power performance of this device
may be tailored for various applications.
The MA05515-DIE is ideally suited for use as an output
stage in telemetry systems. The MA05515-DIE requires
only supply line bypassing, and base resistors,
minimizing the number of external components required.
M/A-COM's MA05515-DIE is fabricated using an InGaP
HBT process. The process features full passivation for in-
creased performance and reliability. This product is 100%
RF tested to ensure compliance to performance specifica-
tions.
Electrical Specifications: Vcc = +3V, Zo = 50 Ohms, T
A
= 25C
Parameter
Test Conditions
Frequency
Units
Min
Typ
Max
Linear Gain
Pin = -20 dBm
1.4 - 1.55 GHz
dB
--
32
--
Input VSWR
Pin = -20 dBm
1.4 - 1.55 GHz
Ratio
--
--
2.1:1
Output VSWR
Pin = -20 dBm
1.4 - 1.55 GHz
Ratio
--
--
2.1:1
Output Power
(Saturated)
Pin = +10 dBm
1.4 - 1.55 GHz
dBm
--
24
--
Output Power vs.
Frequency
Pin = +10 dBm
1.4 - 1.55 GHz
dB
--
--
0.4
Output Power vs.
Temperature
T
A
= -40C to +85C,
Pin = +10 dBm
1.4 - 1.55 GHz
dB
--
--
0.8
Collector Bias Current
Pin = +10 dBm
1.4 - 1.55 GHz
mA
--
320
--
Base Bias Current
Pin = +10 dBm
1.4 - 1.55 GHz
mA
--
5
--
Power Added Efficiency
Pin = +10 dBm
1.4 - 1.55 GHz
%
--
41
--
All dimensions are
mils
mm
Die size is 0.069" x 0.059" x 0.004"
(1.76mm x 1.5mm x 0.102mm)
VC2
Double bond pad
4.0 x 8.0
.100 x .200
RFin
RFout
VC1
26.4
.670
34.3
.870
42.1
1.070
3.5
.088
26.4
.670
34.3
.870
42.1
1.070
65.8
1.671
12.2
.310
34.7
.883
VB1
55.1
1.400
3.5
.088
VB2
26.8
.680
3.9
.100
250 mW L-Band Power Amplifier, 1.4 - 1.55 GHz
MA05515-DIE
V 1P.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation, or guarantee regarding the suitability of its products for any particular
purpose, nor does M/A-COM assume any liability whatsoever arising out of the use
or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (978) 656-2693
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
2
Absolute Maximum Ratings
1,2
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Adequate heat sinking and grounding required.
Parameter
Absolute Maximum
Input Power
+13 dBm
V
CC
+12 volts
V
BB
-8 volts to +6 volts
I
CC
600 mA
Max. Dissipation Power
1350 mW
Channel Temperature
+150C
Operating Temperature
-40C to +85C
Storage Temperature
-65C to +150C
Handling
Permanent damage to the MA05515-DIE may occur if the following precautions are not adhered to:
A. Cleanliness The MA05515-DIE should be handled in a clean environment. DO NOT attempt to
clean assembly after the MA05515-DIE is installed.
B. B. Static Sensitivity All die handling equipment and personnel should comply with DOD-STD-
1686 Class I.
C. Transients Avoid instruments and power supply transients while bias is connected to the
MA05515-DIE. Use shielded signal and bias cables to minimize inductive pick-up.
D. D. General Handling DO NOT touch the surface of the die. It is recommended that the
MA05515-DIE die be handled along the long side with a sharp pair of tweezers.
Mounting
The MA05515-DIE is back-metallized with Pd/Ni/Au (100/1000/30000) metallization. It is recom-
mended that the die be mounted with Au/Sn eutectic preforms. The attachment surface should be clean
and flat.
A. An 80/20 preform is recommended with a work surface temperature of approximately 255
C and a
tool temperature of 265
C. When hot 90/5 nitrogen/hydrogen gas is applied, solder temperature
should be approximately 290
C.
B. DO NOT expose the MA05515-DIE to a temperature greater than 320
C for more than 20 seconds.
No more than 3 seconds of scrubbing should be required for attachment.
Bonding
A. Ball or wedge bond with 1.0 mil diameter gold wire or 3.0 mil x 0.5 mil ribbon. Thermosonic bond-
ing with a nominal stage temperature of 150
C and a ball bonding force of 40 to 50 grams or wedge
bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to
the minimum levels necessary to achieve reliable bonds.
B. Bonds should be started on the die and terminated on the package.
C. Bonding pads are 3.0 mil x 3.0 mil minimum.
250 mW L-Band Power Amplifier, 1.4 - 1.55 GHz
MA05515-DIE
V 1P.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation, or guarantee regarding the suitability of its products for any particular
purpose, nor does M/A-COM assume any liability whatsoever arising out of the use
or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (978) 656-2693
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
3
Recommended Bias Configuration
3,4
Component
Value
R8
2.2K Ohm
R9
470 Ohm
L1, L3
220 nH
L2, L4
68 nH
C11, C19
22 pF
C6, C15
100 pF
C7, C10, C13, C16
0.1 F
Typical Performance Curves
Linear Gain vs. Frequency
VSWR vs. Frequency
Saturated Output Power vs. Freq.
(PIN = +10 dBm)
25
26
27
28
29
30
31
32
33
1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
FREQUENCY (GHz)
LINEAR GAIN (dB)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
FREQUENCY (GHz)
VSWR
15
17
19
21
23
25
27
1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
FREQUENCY (GHz)
OUTPUT POWER (dBm)
3. Apply +3 volts V
CC
. Adjust V
BB
by changing the resistors,
R6 and R7, for desired base current.
4. For optimum IP3 performance, V
CC
bypass capacitors
should be placed within 0.5 inches of the V
CC
leads.
250 mW L-Band Power Amplifier, 1.4 - 1.55 GHz
MA05515-DIE
V 1P.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation, or guarantee regarding the suitability of its products for any particular
purpose, nor does M/A-COM assume any liability whatsoever arising out of the use
or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (978) 656-2693
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Typical Performance Curves
Output Power vs. Input Power and
Temperature
Output Power and ICC vs. Input
Power
Linear Gain vs. Frequency and
Temperature
4
Collector Current vs. Input Power
and Temperature
Ordering Information
Part Number
Package
MA05515-DIE
Die Form
0
3
6
9
12
15
18
21
24
27
-20.0 -17.0 -14.0 -11.0 -8.0
-5.0
-2.0
1.0
4.0
7.0
10.0
INPUT POWER (dBm)
OUTPUT POWER (dBm)
260
269
278
287
296
304
313
322
331
340
CURRENT (mA)
25
26
27
28
29
30
31
32
33
34
35
1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80
FREQUENCY (GHz)
LINEAR GAIN (dB)
-40C
+25C
+85C
220
240
260
280
300
320
340
360
-20.0 -17.0 -14.0 -11.0 -8.0
-5.0 -2.0
1.0
4.0
7.0
10.0
INPUT POWER (dBm)
CURRENT (mA)
-40C
+25C
+85C
0
5
10
15
20
25
30
-20
-17
-14
-11
-8
-5
-2
1
4
7
10
INPUT POWER (dBm)
-40C
+25C
+85C
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