MA08509D
10W Power Amplifier Die
Preliminary Release
(8.0-11 GHz)
Specifications subject to change without notice.
902179 D
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
FEATURES
Broadband Performance
32% Typical Power Added Efficiency
50
Input/Output Impedance
Self-Aligned MSAG
MESFET Process
V
DD
V
GG
RF
IN
RF
OUT
V
DD
Description
Maximum Ratings
(T
A
= 25 C unless otherwise noted)
Rating Symbol
Value
Unit
DC Drain Supply Voltage
V
DD
12
Vdc
DC Gate Supply Voltage
V
GG
-6
Vdc
RF Input Power
P
IN
500
mW
Junction Temperature
T
J
150
C
The MA08509D is a three stage MMIC power
amplifier fabricated using M/A-COM's mature
GaAs Self-Aligned MSAG
MESFET Process.
This product is fully matched to 50 ohms on
both the input and the output.
Storage Temperature
T
STG
-40
to
+85
C
ELECTRICAL CHARACTERISTICS
V
DD
= 10.0 V, V
GG
= -4 V, P
IN
= 18 dBm, T
A
= 25 C
Characteristic Symbol
Min
Typ
Max
Unit
Frequency
8.0 -
11.0
GHz
Output Power, saturated
P
SAT
39.0 40
41.5
dBm
Power Gain, saturated
G
SAT
20 22 dB
Gain Flatness Over Frequency @ P
in
= 18 dBm
-
+/-
1.0
dB
Power Added Efficiency
(P
OUT
=P
SAT
)
PAE
25
32
%
Return Loss
S
11
-6
-4
dB
Harmonics
2
, 3
-30 dBc
Output Stage Thermal Resistance @ Pin = 18 dBm
R
th
5.4
C/W
10W Power Amplifier Die (8-11 GHz)
MA08509D
Specifications subject to change without notice.
902179 D
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
TYPICAL CHARACTERISTICS (
V
DD
= 10 V, V
GG
= -4 V, P
IN
= 18 dBm
)
30
32
34
36
38
40
42
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25
10.5
10.75
11
Frequency (GHz)
Pout
(
d
Bm
)
0
4
8
12
16
20
24
28
32
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25 10.5 10.75
11
Frequency (GHz)
G
a
in (dB
)
Figure 1. Output Power vs. Frequency
Figure 2. Gain vs. Frequency
0
5
10
15
20
25
30
35
40
45
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25
10.5
10.75
11
Frequency (GHz)
PA
E (%)
-25
-20
-15
-10
-5
0
8
8.25
8.5
8.75
9
9.25
9.5
9.75
10
10.25
10.5
10.75
11
Frequency (GHz)
Re
t
u
rn Los
s
(
dB)
Figure 3. Power Added Efficiency vs. Frequency
Figure 4. Input Return Loss vs. Frequency
10W Power Amplifier Die (8-11 GHz)
MA08509D
Specifications subject to change without notice.
902179 D
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
APPLICATION INFORMATION
RF IN
50
50
RF OUT
100 pF
V
GG
V
DD
V
DD
V
DD
V
DD
0.
1
F
5000 p
F
5000 pF
0.
1
F
5
000 pF
0.
1
F
5000 pF
0.
1
F
5000 pF
0.
1
F
100 pF
5000 pF
0.
1
F
V
GG
Figure 5. Recommended bonding diagram for pedestal
mount. Support circuitry typical of MMIC characterization
fixture for CW testing
Assembly:
Chip dimensions: 4.6 mm x 4.6 mm, .003"
thickness.
Die attach: Use AuSn (80/20) 1-2 mil.
preform solder. Limit time @ 300
C to less
than 5 minutes.
Wirebonding: Bond @ 160
C using
standard ball or thermal compression wedge
bond techniques. For DC pad connections,
use either ball or wedge bonds. For best RF
performance, use wedge bonds of shortest
length, although ball bonds are also
acceptable.
Biasing:
1. User must apply negative bias to V
GG
before
applying positive bias to V
DD
to prevent
damage to amplifier.
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