MA08602FR
1W Power Amplifier
(14 - 14.5 GHz)
Specifications subject to change without notice.
902818 C
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
FEATURES
=
35.5 dB Typical Small Signal Gain
=
50
Input/Output Impedance
=
40 dBm Third Order Intercept Point
=
Flange mount package designed for optimum electrical
and thermal performance at Ku-band.
=
Broadband design centered on Ku-band VSAT.
=
Consistent Output Power and Gain makes fixed bias
possible.
MA0
8602FR
Vgg
GND
RFin
Vdd
GND
Vgg
GND
RFout
GND
Vdd
FR Package Pin Configuration
DESCRIPTION
MAXIMUM RATINGS
(T
A
= -40
C to +70
C unless otherwise noted)
Rating Symbol
Value
Unit
DC Drain Supply Voltage
V
DD
9V Vdc
DC Gate Supply Voltage
V
GG
-3V Vdc
RF Input Power
P
IN
4 dBm
Junction Temperature
T
J
+150 C
Storage Temperature
T
STG
-50 to +100
C
The MA08602FR is a five stage MMIC power amplifier
fabricated on M/A-COM's Self-Aligned MSAG
MESFET Process. This product is fully matched to 50
ohms on both the input and the output and can be
used as either a driver or an output stage amplifier.
Although the broadband design can be used for many
applications, it is ideally suited for Ku-band VSAT.
ELECTRICAL CHARACTERISTICS
V
DD
=8.0 V, I
DQ
=550 mA, P
IN
=-1 dBm, T
A
=-40C to +70C
Characteristic Symbol
Min
Typ
Max
Unit
Frequency
=
14
14.5 GHz
Output Power, saturated
P
SAT
30 30.5 33 dBm
Gain, saturated
G
SAT
31 31.5 34 dB
Gain Flatness over band, saturated
+/- 0.5
+/- 1.0
dB
Input Power
(P
OUT
= 30 dBm)
P
INJ
-- -4 -1 dBm
Drain Current
(P
OUT
= 31 dBm)
I
DS
605 700 mA
Gate Bias Voltage
(I
DQ
=550 mA)
V
GG
-2.5 -1.8 -1 V
Gate Current (
V
DD
=8.0V, I
DQ
=550mA, P
IN
=-1dBm, V
DG
<10.5V)
I
GG
1 20 mA
Input VSWR
2:1 3:1
Harmonics
2
-25
dBc
Noise Figure
NF
7 10 dB
Third-Order Intercept Point (
V
DD
=8.0 V, I
DQ
=550 mA,P
IN
=-1
dBm)
IP3
40
dBm
Thermal Resistance (Junction of 3
rd
stage FET to flange)
R
TH
29
C/W
Small Signal Gain (Pin = -20 dBm)
S21
30.5 -- 42 dB
NOTE: All typical values are at room temperature (25
C)
1W Power Amplifier (14 - 14.5 GHz)
MA08602FR
Specifications subject to change without notice.
902818 C
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information