Features
n
31 dB Isolation @ 0 Volts @ 3 GHz
n
0.8 dB Loss @ 10 mA @ 3 GHz
n
< 10 nS Switching Speed
n
Useable from 50 MHz to 6.0 GHz
Description
M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST
PIN Diode Switch that makes use of Series Diodes featuring
Lower Loss, Higher Isolation and Faster Switching Speed. This
device is fabricated on OMCVD epitaxial wafers using a process
designed for high device uniformity and extremely low parasitics.
The switch die is fully passivated with silicon nitride and has an
additional layer of a polymer for scratch and impact protection.
This protective polymer coating provides additional moisture
protection to the SOT-23 assembly.
Applications
The small 20 fF capacitance, and the low 3.0
" ON " resistance of the GaAs PIN diodes allow for higher
isolation at zero volt bias and lower insertion loss vs.
comparable SPST switches. This switch is designed for use
in applications requiring improved RF performance, simple
D.C. Bias, and small device size.
AIGaAs PIN Diode
High Isolation SPST Switch
MA4
AGSW900
-
287T
V 1.00
SOT-23 Package Outline (Topview)
Absolute Maximum Ratings
1
Parameter
Value
Operating Temperature
-65 C to +125 C
Storage Temperature
-65 C to +150 C
Dissipated RF & DC Power
50 mW
Incident RF Power
+20 dBm C.W.
Mounting Temperature
+235 C for 10 seconds
1. Switching speed is measured using a TTL Controlled , +/- 5 V PIN Diode Driver. Driver delay is not included.
Electrical Specifications @ T
A
= 25 C
Parameter and Test Conditions
0.5 GHz to 3.0 GHz Frequency Range
Units Minimum
Value
Typical
Value
Maximum
Value
Insertion Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz
dB
-
0.8
1.3
Isolation @ 0 Volts @ 3 GHz
dB
30
33.0
-
Input / Output Return Loss @ +10 mA ( + 3.0 V Reference Voltage ) @ 3 GHz
dB
-
13.0
-
Switching Speed (10 to 90% RF Voltage)
1
nS
-
10.0
-
NOTES:
1. Pin Labeled J1 is the Diode's Anode
2. Pin Labeled J2 is the Diode's Cathode
3. Pin Labeled GND must be connected to RF & DC Ground
1. Exceeding any of these values may result in permanent
damage
GND
J1
J2
AIGaAs PIN Diode High Isolation SPST Switch
MA4AGSW900-287T
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
2
Typical RF Performance
MA4AGSW900-287 Insertion Loss vs DC Bias
-2.00
-1.80
-1.60
-1.40
-1.20
-1.00
-0.80
-0.60
-0.40
-0.20
0.00
500
1000
1500
2000
2500
3000
Frequency ( GHz )
Bias = 3 mA
Bias = 5 mA
Bias = 10 mA
Bias = 30 mA
MA4AGSW900-287 Return Loss vs D.C. Bias
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
500
1000
1500
2000
2500
3000
Frequency ( GHz )
Bias = 3 mA
Bias = 5 mA
Bias = 10 mA
Bias = 30 mA
AIGaAs PIN Diode High Isolation SPST Switch
MA4AGSW900-287T
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
3
Typical RF Performance
MA4AGSW900-287 Isolation at 0V D.C. Bias
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
500
1000
1500
2000
2500
3000
Frequency ( GHz )
Bias = 0V
AIGaAs PIN Diode High Isolation SPST Switch
MA4AGSW900-287T
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
4
Mounting Information
The illustration indicates the recommended mounting pad configuration for the SOT-23package. Solder paste containing flux
should be screened onto the pads to a thickness of 0.005- 0.007 inches. The plastic package device is placed in position,
firmly adhering to the solder past.
Permanent attachment is performed by a reflow soldering procedure during which the tab temperature does not exceed
+275 C and the body temperature does not exceed +250 C.
SOT-23 (Case Style 287)
Dim
Inches
Millimeters
Min.
Max.
Min.
Max.
A
-
0.048
-
1.22
B
-
0.008
-
0.20
C
-
0.040
-
1.00
D
0.013
0.020
0.35
0.50
E
0.003
0.006
0.08
0.15
F
0.110
0.119
2.80
3.00
H
0.037 typical
0.95 typical
J
0.075 typical
1.90 typical
K
-
-
G
0.047
0.056
1.20
1.40
L
-
-
0.103
2.60
0.024
0.60
SOT-23 Circuit Layout
0.75
1.9
.037
0.95
.035
0.90
.090
2.2
.030
0.80
inches
mm
Dimenstions:
min.
min.
SOT-23
Case Style 287
F
D
H
J
A
G
L
C
E
B
K
N
M
Dim
Min.
M
10 max.
1
N
2 ... 30
Note:
1. Applicable on all
sides
AIGaAs PIN Diode High Isolation SPST Switch
MA4AGSW900-287T
V 1.00
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300
5
SPST Schematic
Operation of the MA4AGSW900-287T SPST Switch
Successful operation of the SPST Switch is accomplished by connecting J1 ( PIN 1 ) to a RF Bias Network , J2 ( PIN 2 ) to a
DC Return Network , and SOT-23 Ground ( PIN 3 ) to Circuit RF and D.C. Ground. Approximately + 3.0 V @ + 5 mA will
create the Insertion Loss State, and 0 V will produce the Isolation State. The Isolation value is improved slightly by applying
3 V D.C. Bias. The SPST switch can be driven from a simple + 5 V TTL Gate Driver.
Static Sensitivity
Gallium Arsenide PIN diodes are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be
used when handling these devices.
PIN1 (J1)
PIN2 (J2)
PIN 3
GND
RF Input
RF Output
GND
GND
D.C. Bias
MA4AGSW900-287
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