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Электронный компонент: MA4P1450-1091T

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Surface Mount
PIN Diodes
MA4P1250, MA4P1450 SMQTM
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
Features
q
Non-Rollable MELF Design
q
Hermetically Sealed
q
Low Loss, Low Distortion
q
Passivated PIN Diode Chips
q
Full Face Chip Bonds
q
Non-Magnetic Package
q
Pick and Place Compatibility
Description
The MA4P1250 and MA4P1450 are square surface mount-
able PIN diodes in a non-rollable, metal electrode lead-
less faced (MELF) package. They incorporate passivated
PIN diode chips that are full face bonded to refractory
metal pins. These parts utilize M/A-COM's HIPAX tech-
nology in a low inductance ceramic package with no rib-
bons or whisker wires. The package is hermetically
sealed at temperatures exceeding 300C.
Applications
The MA4P1250 is designed for use as a low loss switch-
ing element from HF through UHF. Its high power rating
allows performance in antenna switch elements at RF
power levels greater than 100 watts CW. It is designed to
meet the low distortion requirements of mobile radios.
The MA4P1450 is a higher power diode. It has lower dis-
tortion at RF CW power greater than 10 watts and can
dissipate 7.5 watts.
Designed for Automated Assembly
These surface mount PIN diodes are designed for high
volume tape and reel assembly. The square package
eases automatic pick and place indexing and assembly.
The parallel flat surfaces are suitable for key jaw or vac-
uum pickup techniques. All solderable surfaces are tin
plated and compatible with reflow and vapor phase sol-
dering methods.
Environmental Capability
These HIPAX diodes are applicable for use in industrial
and military applications. They can meet the environmen-
tal requirements of MIL-STD-750 and MIL-STD-202 or be
screened to JAN-TX and other high reliability standards.
SOLDERABLE
SURFACES
CERAMIC
FULL FACE
BOND
PASSIVATED
PIN DIODE CHIP
Size, Inches (mm)
Case
A(sq.)
B
C
Model No.
Style
Min./Max.
Min./Max.
Min./Max.
MA4P1250
1072
0.080/0.095
0.115/0.135
0.008/0.030
(2.03/2.41)
(2.92/3.43)
(0.203/0.762)
MA4P1450
1091
0.138/0.155
0.180/0.200
(3.51/3.94)
(4.57/5/08)
SMQ is a trademark of M/A-COM, Inc.
Surface Mount PIN Diodes
MA4P1250, MA4P1450 SMQTM
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specifications Subject to Change Without Notice.
Electrical Specifications
@ 25C
(MA4P1250)
Parameter
Minimum Typical Maximum
Unit
Condition
Series Resistance
--
0.5
0.75
F = 100 MHz
I = 50 mA
Capacitance
--
0.9
1.2
pF
F = 1 MHz
V = 50 V
Parallel Resistance
5 K
10 K
--
F = 100 MHz
V = 0 V
Carrier Lifetime
2.0
4.0
--
s
I = 10 mA
Forward Bias Harmonic
80
90
--
dBc
F = 100 MHz
Distortion (R2a, R3a)
P = 30W
I = 50 mA
Reverse Bias Harmonic
60
70
dBc
--
F = 100 MHz
Distortion (R2a, R3a)
P = 0 dBm
V = 0 V
Voltage Rating
50
--
--
V
I = 10 A
Forward Voltage
--
1.0
--
V
I = 50 mA
a
a
a
a
CAPACITANCE vs FREQUENCY (MA4P1250)
CARRIER LIFETIME vs FORWARD CURRENT
(MA4P1250)
PARALLEL RESISTANCE vs FREQUENCY AND
REVERSE BIAS (MA4P1250)
Typical Performance Curves
SERIES RESISTANCE AT 100 MHZ vs FORWARD CURRENT
(MA4P1250)
Absolute Maximum Ratings
@ 25C
Parameter
Absolute Maximum
Voltage
50 Volts
Operating Temperature
-65C to + 175C
Storage Temperature
-65C to +175C
Power Dissipation
Free Air
1.5 Watts
Contact Surfaces @ +25C
4.0 Watts
* Available only in case style 1072.
Surface Mount PIN Diodes
MA4P1250, MA4P1450 SMQTM
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
3
Specifications Subject to Change Without Notice.
V3.00
MA4P1450 PIN Diodes for High Volume Applications
Electrical Specifications
@ 25C
SERIES RESISTANCE AT 100 MHZ vs FORWARD
CURRENT (MA4P1450)
PARALLEL RESISTANCE vs FREQUENCY AND
REVERSE BIAS (MA4P1450)
Typical Performance Curves
CAPACITANCE vs FREQUENCY (MA4P1450)
Absolute Maximum Ratings
@ 25C
Parameter
Absolute Maximum
Operating Temperature
-65C to + 175C
Storage Temperature
-65C to +175C
DC Reverse Voltage
50 Volts
Power Dissipation
Free Air
1.5 Watts
Contact Surfaces @ +25C
4.0 Watts
Parameter
Minimum Typical Maximum
Unit
Condition
Series Resistance
--
0.5
0.75
Ohms
I
F
= 50 mA
F = 100 MHz
Capacitance
--
1.8
2.5
pF
F = 1 MHz
V
R
= 0
Parallel Resistance
5 K
10 K
--
F = 100 MHz
V
R
= 0
Carrier Lifetime
4
6
--
S
I
F
= 10 mA
Forward Bias Harmonic
80
90
--
dBc
F = 100 MHz
Distortion (R2a, R3a)
P = 30W
I
F
= 100 mA
Reverse Bias Harmonic
60
70
--
dBc
F = 100 MHz
Distortion (R2a, R3a)
P = 0 dBm
V = 0 Volts
Voltage Rating
50
--
--
Volts
I
V
= 10 mA
Forward Voltage
1.0
--
--
--
100 mA
Thermal Resistance
--
12.5
15
C/Watt --
Junction Case R
TH(I-C)
a
a
a
a
Note: Available only in case style 1091.
Rp
(KOHMS)
CAPACITANCE (
p
F)
10000
1000
100
10
1
0.1
0.01
0.001
0.01
0.1
1
10
100
1000
1000
100
10
1
1000
100
10
1
1
10
100
1000
1
10
100
1000
SERIES RESISTANCE (OHMS)
FORWARD CURRENT (mA)
FREQUENCY (MHZ)
FREQUENCY
10V
50V
2V
1V
0,1V
0V
1V
2V
10V
50V
5V