Package Outline (Topview)
Features
n
4 PIN Diodes in SOT-25 Plastic Package
n
Externally Selectable Bias and RF Match Network
n
5 3,000 MHz Useable Frequency Band
n
+ 43 dBm IP3@ 1 GHz (
50
)
n
1.0 dB Loss @ 1 GHz (
50
)
n
30 dB Attenuation @ 1 GHz (
50
)
Description
M/A-COM's MA4P274-1225 is a wideband, lower insertion
loss, high IP3, Quad PIN Diode
Attenuator in a low-cost,
surface mount SOT-25 package. Four PIN Diodes in one
package reduce design parasitics and improve circuit
density.
Applications
These PIN Diode Attenuators perform well where RF
Signal Amplitude Control is required in 50
Handset
Circuits and 75
Broadband CATV Systems. Exceptional
Insertion Loss, Attenuation Range, and IP3 at <10 mA bias
make these devices suitable for better power level control in
RF Amplifiers.
Quad PIN Diode
Attenuator
5 3000 MHz
MA4P274
-
1225T
4
3
2
1
5
Topview
PIN Configuration
PIN Function
PIN
Function
1
RF In
4
Shunt 1 Bias
2
Series
Bias
5
Shunt 2 Bias
3
RF Out
Guaranteed Electrical Specifications: @ +25 C
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Ct @ 0 V
100 MHz
pF
0.45
0.50
Rs @ 1 mA
100 MHz
13
18
Rs @ 10 mA
100 MHz
2.3
3.0
V
b
D.C.
V
125
150
Minority Carrier
Lifetime
( 50 % - 90 % ) Voltage
If = + 10mA, Ir = - 6mA Pulse
@ 100 kHz Sq Wave
nS
1000
2000
Power
Dissipation
D.C. and F = 5 3,000 MHz
Derate linearly to 0 mW at 125 C
Using 1,000 deg-C/W
Thermal Resistance
mW
100
RF Incident
Power
F = 5 3,000 MHz
Vshunt 1 & 2 Diode Bias = 0.75 V
Vseries Diode Bias = 0 to 20 V
dBm
+ 20
MA4P274-1225, V 3.00
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode
Attenuator
MA4P274-1225T
PIN 1:
RF In
PIN 4 :
Shunt 1 Bias
PIN 2:
Series Bias
PIN 3:
RF Out
PIN 5 :
Shunt 2 Bias
Dim
Inches
Millimeters
Min.
Max.
Min.
Max.
A
.1103
.1181
2.80
3.10
B
.1023
.1181
2.6
3.00
C
0.0355
.0512
0.9
1.30
D
0.0591
.0669
1.5
1.70
E
.0374 REF.
F
.0138
.0197
.35
.50
G
.0031
0.0079
.08
0.2
H
.0002
.0059
.05
.15
J
.0138
.0216
.35
.55
0.95 REF.
Functional Schematic
Case Style: SOT 25
Parameter
Absolute Maximum
Operating Temperature
-65 C to +125 C
Storage Temperature,
No Dissipated Power
-65 C to +150 C
-100 V
DC Current at 25 C
75 mA
Mounting Temperature
+235 C for 10 seconds
DC Voltage at Temperature
Extremes
Absolute Maximum Ratings
1
1. Exceeding any one or combination of these limits may cause
permanent damage.
2
1.
Dimensions do not include mold peaks, protrusion or
gate burrs which shall not exceed 0.0098 in.
(.25) mm per side.
2.
Leads Coplanarity should be 0.003 (0.08) mm Max.
MA4P274-1225, V 3.00
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode
Attenuator
MA4P274-1225T
Typical 75
SOT-25 RF Performance @ +25 C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter
Frequency Range
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
5 1,000 MHz
+ 2 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-1.1
Insertion Loss
5 1,000 MHz
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-0.6
Attenuation
5 1,000 MHz
0 mA / Series Diode
and 1 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-27
Return Loss
5 1,000 MHz
+ 4.5 mA / Series Diode
and 1.0 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-10
3
Typical 50
SOT-25 RF Performance @ +25 C using Wideand RF Circuit Design
( Values Shown include Through Loss Calibrated Out of RF Test Circuit )
Parameter
Frequency Range
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
5 1,000 MHz
+ 3 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-2.0
Insertion Loss
5 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-1.0
Return Loss
5 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-10
Attenuation
5 1,000 MHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F = 1 GHz
dB
-29
Input IP3
5 1,000 MHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
dBm
43
Input IP3
5 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 1000 MHz, F2 = 1100 MHz
dBm
43
Input IP3
5 1,000 MHz
0 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
dBm
43
Input IP3
5 1,000 MHz
+ 6.5 mA / Series Diode
and 0.75 V Shunt 1 and 2 Bias
F1 = 100 MHz, F2 = 110 MHz
dBm
33
Settling Time
5 1,000 MHz
Within 1 dB of Final Attenuation Value
F = 1 GHz
uS
3
RF C.W. Incident
Power
5 1,000 MHz
0 20 V Series Diode Bias
and 0.75 V Shunt 1 and 2 Bias
dBm
+ 20
MA4P274-1225, V 3.00
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode
Attenuator
MA4P274-1225T
- 2 5
- 2 0
- 1 5
- 1 0
-5
0
50
1 5 0
250
350
4 5 0
550
6 5 0
7 5 0
850
950
Frequency ( MHz )
-65
-55
-45
-35
-25
-15
-5
50
150
250
350
450
550
650
750
850
950
Frequency ( MHz )
0.10
1.00
1.00
10.00
100.00
1000.00
10000.00
F ( MHz )
1
10
100
1000
0.01
0.10
1.00
10.00
100.00
I ( mA )
R
S
vs. I
F
@ 100 MHz and 1 GHz
L
S
vs. Frequency @ 10 mA
MA4P274-1225 Attenuation vs Frequency in
50 Ohms, Shunt Bias = 0.75 V
4
MA4P274-1225 Return Loss vs Frequency in
50 Ohms, Shunt Bias = 0.75 V
MA4P274-1225 Diode Rs vs I
MA4P274-1225 Diode Ct vs
Frequency @ 0 V
900 MHz
100 MHz
4 MHz
Series Diode: 5
Series Diode: 0 V
Series Diode: 1 V
Series Diode: 5 V
Series Diode: 10 V
Series Diode: 10 V
Series Diode: 1 V
Series Diode: 0 V
Series Diode: 3 V
Series Diode: 2 V
MA4P274-1225, V 3.00
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Quad PIN Diode
Attenuator
MA4P274-1225T
5
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
2 0 . 0 0
1 4 2 . 5 0
2 6 5 . 0 0
3 8 7 . 5 0
5 1 0 . 0 0
6 3 2 . 5 0
7 5 5 . 0 0
8 7 7 . 5 0
1 0 0 0 . 0 0
F r e q u e n c y ( M H z )
MA4P274-1225 Insertion Loss vs Frequency in 75
Ohms, Shunt Bias = 1 V
Series Current per Diode = 2 mA
Series Current per Diode = 4.5 mA
20
25
30
35
40
45
50
55
60
0
2
4
6
8
10
12
14
16
18
20
Series Diode Voltage ( V )
MA4P274-1225 IP3 vs Series Voltage,
Vshunt = .075 V
F1 = 1000 MHz, F2 = 1100 MHz
F1 = 100 MHz, F2 = 110 MHz
-70
-60
-50
-40
-30
-20
-10
0
20.00
142.50
265.00
387.50
510.00
632.50
755.00
877.50
1000.00
Frequency (MHz)
MA4P274-1225 Attenuation vs Frequency in
75 Ohms, Shunt Bias = 1 V
Series Diode: 3 V
Series Diode: 20 V
Series Diode: 0.7 V
Series Diode: 1 V
Series Diode: 0.5 V
Series Diode: 2 V
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