High Power
PIN Diodes
MA4P HIPAXTM Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
1
Specifications Subject to Change Without Notice.
Features
q
High Power Handling
q
Low Loss, Low Distortion
q
Voltage Ratings to 1000 Volts
q
Passivated PIN Chip Full Face Bonded
q
Hermetically Sealed
q
Low Inductance Axial Lead, and SMQ
Surface Mount Package Options
q
Available as Chips
Description
M/A-COM's HIPAX PIN diodes are designed for service in
switch and attenuator applications requiring high power
handling and low distortion. HIPAX PIN diodes incorpo-
rate a fully passivated PIN diode chip resulting in
extremely low reverse leakage current. all high voltage
HIPAX PIN diodes are specified at 1 A reverse current at
the voltage rating. The chip is full face bonded to refrac-
tory metal pins on both anode and cathode. The result is
a low loss PIN diode with low thermal resistance due to
symmetrical thermal paths.
HIPAX PIN diodes are packaged in hermetically sealed
ceramic enclosures at temperatures exceeding 300C.
Package options include: axial leaded and surface mount
packages that have a square, nonrollable outline.
The semiconductor technology utilized in the HIPAX
family draws on M/A-COM's substantial experience in
PIN diode design. This results in thick intrinsic region
PIN diodes specified with low resistance, low capacitance
and long carrier lifetime parameters.
SMQ Square Outline Surface Mount
The surface mount HIPAX PIN diode is available in
M/A-COM's unique, square outline, non-rollable SMQ
package design. The SMQ package eases automatic pick
and place indexing and assembly.
Applications
HIPAX PIN diodes are designed for use in a wide variety
of switch and attenuator applications from HF through
UHF at power levels beyond 1 kW CW. These diodes
have been comprehensively characterized to ensure pre-
dictable performance.
Design Recommendations
1. Low Distortion Attenuators: MA4P4301B
2. Surface Mount Switches: MA4P7101F
3. Cellular Radio Antenna Switches:
MA4P1200, MA4P1250
Environmental Capability
HIPAX PIN diodes are appropriate for use in military,
industrial and commercial applications. They are capable
of meeting the environmental requirements of
MIL-STD-750 and MIL-STD-202. HIPAX PIN diodes are
capable of HTRB screening at 80% of voltage rating at
150C.
Case Styles
401
1072
High Power PIN Diodes
MA4P HIPAXTM Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
2
Specifications Subject to Change Without Notice.
Voltage Ratings and Model Numbers
Electrical Specifications
@ 25C
Power Dissipation and Thermal Resistance Ratings
Environmental Ratings
HIPAX PIN diodes may be supplied with JAN TX level screening. The table
lists some of the MIL-STD-750 environmental tests HIPAX PIN diodes are
designed to meet.
MIL-STD-750
Test
Method
Description
High Temperature Storage
1031
+175C, 250 Hours
Temperature Shock
1051
-65C to +175C, 20 Cycles
HTRB
1038
809b VR, +150C, 96 Hours
Moisture Resistance
1021
Fine Leak
1071 Cond. H
1 x 10
-7
CC/Sec
Constant Acceleration
2006
20,000 G's
Vibration Fatigue
2046
20,000 G's
Solderability
2026
Lead Fatigue
2036.3 Cond. E
3 cycles, 8 oz., 90,
Bent at Body
Tension
2036.3 Cond. A
2 Ibs., 30 seconds
Absolute Maximum Ratings
@ 25C
Voltage
MA4P4000
MA4P4300
MA4P7000
MA4P7100
Rating
Series
Series
Series
Series
100 Volts
MA4P4001
MA4P4301
MA4P7001
MA4P7101
200 Volts
MA4P4002
MA4P4302
MA4P7002
MA4P7102
400 Volts
--
--
--
MA4P7104
600 Volts
MA4P4006
--
MA4P7006
--
MA4P4000
MA4P4300
MA4P7000
MA4P7100
Parameter
Symbol
Condition
Series
Series
Series
Series
Series Resistance (Max)
Rs
100 mA, 100 MHz
0.5
1.0
0.8
0.5
Total Capacitance (Max)
CT
100 V, 1 MHz
2.2 pF
2.0 pF
0.7 pF
1.0 pF
Parallel Resistance (Min)
Rp
100 V, 100 MHz
20 k
50 k
200 k
100 k
Carrier Lifetime (Min)
TL
10 mA
6 s
8 s
3 s
2.5 s
Forward Voltage (Max)
VF
100 mA
1.0 V
1.2 V
1.0 V
1.0 V
Reverse Current (Max)
IR
Voltage Rating
1 A
1 A
1 A
1 A
I-Region Width (Nominal)
W
--
175 m
300 m
175 m
100 m
MA4P4000
MA4P4300
MA4P7000
MA4P7100
Package Style
Condition
PD
JC
PD
JC
PD
JC
PD
JC
B
1/4 Inch Total Length
12 W
12.5C/W
10 W
15C/W
5 W
30C/W
6 W
25C/W
(Axial Leaded)
to 25C Free Air Rating
2.5 W
--
2.5 W
--
1.5 W
--
1.5 W
--
F (SMQ Surface Mount)
25C Contacts
7.5 W
20C/W
5 W
30C/W
3 W
50C/W
3 W
50C/W
Both B and F
Single 1 s pulse
100 kW
--
100 kW
--
15 kW
--
15 kW
--
Both B and F
Single 100 s pulse
5 kW
.03C/W
5 kW
03C/W
300 W
0.5C/W
300 W
0.5C/W
Ordering Information
HIPAX PIN diodes are designated by MA4P followed by four
digits which indicate the voltage rating and series. A package
style letter suffix follows:
To purchase:
MA4P4000 Series, 600V, SMQ package (F)
Order Model No.: MA4P4006F
The same unit in an axial lead package (B) is: MA4P4006B.
Parameter
Absolute Maximum
DC Reverse Voltage
Voltage Rating
Operating and Storage Temperature -65C to +175C
Installation Temperature
+250C, 30 Seconds
High Power PIN Diodes
MA4P HIPAXTM Series
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
3
Specifications Subject to Change Without Notice.
V3.00
Typical Performance Curves
SERIES RESISTANCE AT 100 MHz vs FORWARD CURRENT
(MA4P1200)
CAPACITANCE vs FREQUENCY
(MA4P1200)
Absolute Maximum Ratings
@ 25C
Parameter
Minimum
Typical
Maximum
Unit
Condition
Voltage Rating
50
--
--
V
I = 10 A
Series Resistance
--
0.5
075
F = 100 MHz
I = 50 mA
Capacitance: MA4P1200
--
1.2
1.5
pF
F = 1 MHz
V = 50 V
Parallel Resistance
5 K
10 K
--
F = 100 MHz
V = 0 V
Carrier Lifetime
2.0
4.0
--
s
I = 10 mA
Forward Bias Harmonic
80
90
--
dBc
F = 100 MHz
Distortion (R
2a
R
3a
)
P = 30 WA
I = 50 mA
Reverse Bias Harmonic
60
70
--
dBc
F = 100 MHz
Distortion (R
2a
R
3a
)
P = 0 dBm
V = 0 V
Forward Voltage
--
--
1.0
V
I = 50 mA
a
a
a
a
PARALLEL RESISTANCE vs FREQUENCY AND REVERSE BIAS
(MA4P1200)
HEAT SINK TEMPERATURE vs MAXIMUM POWER DISSIPATION
(MA4P1200)
Note: MA4P1200 available in axial leaded case style.
Parameter
Absolute Maximum
Operating and Storage Temp.
-65C to +175C
DC Reverse Voltage
50 Volts
Power Dissipation:
Free Air
1.5 Watts
1/4 inch spaced to +25C Contacts
5.5 Watts
Electrical Specifications
@ 25C (MA4P1200)
High Power PIN Diodes
MA4P HIPAXTM Series
V3.00
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
4
Specifications Subject to Change Without Notice.
CAPACITANCE vs FREQUENCY AND REVERSE BIAS
(MA4P4000 SERIES)
CAPACITANCE vs FREQUENCY AND REVERSE BIAS
(MA4P4300 SERIES)
PARALLEL RESISTANCE vs FREQUENCY AND REVERSE
VOLTAGE (MA4P4300 SERIES)
Typical Performance Curves
SERIES RESISTANCE AT 100 MHz vs FORWARD
CURRENT (MA4P4000, MA4P4300 SERIES)
SERIES RESISTANCE AT 100 MHz vs FORWARD CURRENT
(MA4P7000, MA4P7100 SERIES)
PARALLEL RESISTANCE vs FREQUENCY AND REVERSE
VOLTAGE (MA4P4000 SERIES)
High Power PIN Diodes
MA4P HIPAXTM Series
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
s
Asia/Pacific: Tel. +81 3 3263 8761
s
Europe: Tel. +44 (1344) 869 595
Fax (800) 618-8883
Fax +81 3 3263 8769
Fax +44 (1344) 300 020
5
Specifications Subject to Change Without Notice.
V3.00
CAPACITANCE vs FREQUENCY AND REVERSE BIAS
(MA4P7100 SERIES)
CARRIER LIFETIME vs FORWARD CURRENT
PULSED THERMAL IMPEDANCE vs PULSE WIDTH
Typical Performance Curves
(Cont'd)
CAPACITANCE vs FREQUENCY AND REVERSE BIAS
(MA4P7000 SERIES)
PARALLEL RESISTANCE vs REVERSE VOLTAGE
(MA4P7000 SERIES)
PARALLEL RESISTANCE vs FREQUENCY AND REVERSE
VOLTAGE (MA4P7100 SERIES)
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