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Электронный компонент: MAAM37000-A1G

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V 2.00
Parameter
Units
Min.
Typ.
Max.
Gain
dB
15
17
Noise Figure
dB
2.2
3.2
Input VSWR
2.0:1
Output VSWR
2.0:1
Output 1 dB Compression
dBm
+14
Input IP3
dBm
+8
Reverse Isolation
dB
35
Bias Current
mA
75
110
Features
Low Noise Figure: 2.2 dB
High Gain: 17 dB
Gain Flatness: 0.5 dB
Single Supply: +4 V
No External Components Require d
DC Decoupled RF Input and Output
Small, 8-Lead Ceramic Package
D e s c r i p t i o n
M/A-COM's MAAM37000-A1 is a wide band, low noise,
MMIC amplifier housed in a small 8-lead ceramic pack-
age. It includes two integrated gain stages and employs
series inductive feedback to obtain excellent noise figure
and a good, 50-ohm, input and output impedance match
over the entire frequency band. The MAAM37000-A1
operates from a single +4 V supply. It is fully monolithic,
re q u i res no external components, and is provided in a
u s e r-friendly, microwave package.
The MAAM37000-A1 perf o rms well as a low noise ampli-
fier in receive applications and as a driver or buffer ampli-
fier where high gain, excellent linearity and low power
consumption are important. Because of its wide band-
width, the MAAM37000-A1 can be used in numero u s
c o m m e rcial and government system applications, such as
TVRO, VSAT, missile guidance and radar.
The MAAM37000-A1 is manufactured in-house using a
reliable, 0.5-micron, GaAs MESFET process. This pro d u c t
is 100% RF tested to ensure compliance to perf o rm a n c e
s p e c i f i c a t i o n s .
L ow Noise GaAs MMIC Amplifier
3.5 - 7 GHz
MAAM37000-A1
Electrical Specifications
Test Conditions: TA = +25C, Z0 = 50 , VD D = +4 V, PI N = -30 dBm
Ordering Information
CR-3
Part Number
Package
MAAM37000-A1
8-Lead Ceramic
MAAM37000-A1G
Gull Wing
q
q
q
q
q
q
q
V 2.00
Schematic
Low Noise GaAs MMIC Amplifier
MAAM37000-A1
Parameter
Absolute Maximum
V
DD
+7 volts
Input Power
+20 dBm
Current
150 mA
Channel Temperature
+150C
Operating Temperature
2
-55C to +100C
Storage Temperature
-65C to +150C
Absolute Maximum Ratings
1
Typical Performance @ +25C
1. Operation of this device outside these limits may cause permanent
damage.
2. Typical thermal resistance ( jc) = +120C/W
GAIN v s F R E QUENCY
2
3
4
5
6
7
8
20
18
16
14
12
10
FREQUENCY (GHz)
NOISE FIGURE v s F R E QUENCY
2
3
4
5
6
7
8
6
5
4
3
2
1
FREQUENCY (GHz)
VSWR v s F R E QU E N C Y
2
3
4
5
6
7
8
5.0
4.0
3.0
2.0
1.0
FREQUENCY (GHz)
Input
Output