0.1W Distributed Amplifier
1.0 20.5 GHz
MAAMGM0002-DIE
1.0 - 20.5 GHz GaAs MMIC Amplifier
RO-P-DS-3047 -A-
Preliminary Information
Features
1.0 to 20.5 GHz Operation
0.1 Watt Saturated Output Power Level
Select at Test Biasing
Variable Drain Voltage (5-6V) Operation
Self-Aligned MSAG
MESFET Process
Primary Applications
EW
Radar
Description
The
MAAMGM0002-Die
is a 0.1W Distributed Amplifier with
on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. The MMIC can be used as
a broadband amplifier stage or as a driver stage in high power
applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using
M/A-COM's repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG
) MESFET
Process. This process features polyimide scratch protection.
Electrical Characteristics: T
B
= 40C
1
, Z
0
= 50
, V
DD
= 5V, V
GG
= -1.5V, P
in
= 14 dBm
1. T
B
= MMIC Base Temperature
Parameter
Symbol
Typical
Units
Bandwidth
f
1.0-20.5 GHz
Output Power
P
OUT
21 dBm
Power Added Efficiency
PAE
12 %
1-dB Compression Point
P1dB
20 dBm
Small Signal Gain
G
9 dB
Input VSWR
VSWR
3:1
Gate Current
I
GG
< 2
mA
Drain Current
I
DD
< 170
mA
Output TOI
OTOI
31
dBm
RO-P-DS-3047 - A-
2/6
0.1W Distributed Amplifier
MAAMGM0002-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Maximum Operating Conditions
1
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2.0 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 5 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ 2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
V
DD
5.0
5.0
6.0
V
Gate Voltage
V
GG
-2.4
-2.0
-1.5
V
Gate Voltage, Select at Test
HI, MID, LO
-5.0
V
Input Power
P
IN
17
dBm
Junction Temperature
T
J
150
C
MMIC Base Temperature
T
B
Note 2
C
Recommended Operating Conditions
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
19.0
dBm
Drain Voltage
V
DD
+8.0
V
Gate Voltage
V
GG
-3.0
V
Gate Voltage, Select at Test
HI, MID, LO
-5.0
V
Quiescent Drain Current (No RF)
I
DQ
200
mA
Quiescent DC Power Dissipation (No RF)
P
DISS
1.2
W
Junction Temperature
T
J
180
C
Storage Temperature
T
STG
-55 to +150
C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
2. Maximum MMIC Base Temperature = 150C -- 88.3 C/W * V
DD
* I
DQ
RO-P-DS-3047 - A-
3/6
0.1W Distributed Amplifier
MAAMGM0002-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 5V, P
in
= 14dBm.
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0.5
2.5
4.5
6.5
8.5
10.5
12.5
14.5
16.5
18.5
20.5
22.5
Frequency (GHz)
POUT
PAE
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
5.0
5.2
5.4
5.6
5.8
6.0
Drain Voltage (volts)
POUT
PAE
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 3.5 GHz.
RO-P-DS-3047 - A-
4/6
0.1W Distributed Amplifier
MAAMGM0002-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 4. Small Signal Gain and VSWR vs. Frequency at V
DD
= 5V.
-5
0
5
10
15
20
0.5
2.5
4.5
6.5
8.5
10.5
12.5
14.5
16.5
18.5
20.5
22.5
Frequency (GHz)
1
2
3
4
5
6
GAIN
VSWR
Figure 3. 1dB Compression Point vs. Drain Voltage
5
10
15
20
25
30
35
40
0.5
2.5
4.5
6.5
8.5
10.5
12.5
14.5
16.5
18.5
20.5
22.5
Frequency (GHz)
VDD = 6
VDD = 5
RO-P-DS-3047 - A-
5/6
0.1W Distributed Amplifier
MAAMGM0002-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Mechanical Information
Chip Size: 2.98 x 1.98 x 0.075 mm
(
118 x 78 x 3 mils)
Pad
Size (
m)
RF In and Out
100 x 200
DC Drain Supply Voltage VDD
150 x 150
DC Gate Supply Voltage VGG
150 x 150
Size (mils)
4 x 8
6 x 6
6 x 6
Bond Pad Dimensions
0.152mm.
1.
3
25m
m.
0
0
0.569mm.
1.828mm.
1.980mm.
2.
98
0
m
m
.
2.
0
50m
m.
2.
85
3
m
m
.
2.
2
25m
m.
1.094mm.
1.
6
25m
m.
0.
97
0
m
m
.
HI
MID
LO
GND
IN
OU
T
V
DD
V
GG
2.
5
25m
m.
0.
12
7
m
m
.
Figure 5. Die Layout
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