200mW Ka-Band Power Amplifier
32.0-36.0 GHz
MAAPGM0013-DIE
32.0-36.0 GHz GaAs MMIC Amplifier
RO-P-DS-3058 - -
Preliminary Information
Features
200mW Output Power Level
32.0-36.0 GHz Operation
Variable Drain Voltage (5-6V) Operation
Self-Aligned MSAG
MESFET Process
Balanced Configuration, Excellent Input
and Output VSWR
Primary Applications
Radar Applications
Satellite Communications
Description
The
MAAPGM0012-DIE
is a 3-stage, 200mW power ampli-
fier with on-chip bias networks. This product is fully
matched to 50 ohms on both the input and output. It can be
used as a power amplifier stage or as a driver stage in high
power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM's repeatable, high performance and highly reliable
GaAs Multifunction Self-Aligned Gate (MSAG
) MESFET
Electrical Characteristics: T
B
= 40C
1
, Z
0
= 50
, V
GG
= -1.5V, V
DD
= 6V, P
in
= 14 dBm
1. T
B
= MMIC Base Temperature
Parameter
Symbol
Typical
Units
Bandwidth
f
32.0-36.0 GHz
Output Power
P
OUT
23 dBm
1-dB Compression Point
P1dB
22 dBm
Small Signal Gain
G
13 dB
Input VSWR
VSWR
1.3:1
Output VSWR
VSWR
1.3:1
Drain Current
I
DD
< 700
mA
200mW Ka-Band Power Amplifier
MAAPGM0013-DIE
RO-P-DS-3058 - - 2/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Maximum Operating Conditions
1
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
V
DD
5.0 6.0 6.0 V
Input Power
P
IN
14.0
dBm
Junction Temperature
T
J
150
C
MMIC Base Temperature
T
B
Note
2
C
Recommended Operating Conditions
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
19.0
dBm
Drain Supply Voltage
V
DD
8.0
V
Quiescent Drain Current (No RF)
I
DQ
500
mA
Quiescent DC Power Dissipated (No RF)
P
DISS
3.0
W
Junction Temperature
T
J
180
C
Storage Temperature
T
STG
-55 to +150
C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
2. Maximum MMIC Base Temperature = 150C -- 38.0 C/W * V
DD
* I
DQ
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -1.5 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 6.0 V.
3. Adjust V
GG
to set I
DQ
, (approximately @ 1.5 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
200mW Ka-Band Power Amplifier
MAAPGM0013-DIE
RO-P-DS-3058 - - 3/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 1. Output Power vs. Frequency at V
DD
= 6V and Pin = 14 dBm.
10
12
14
16
18
20
22
24
26
28
30
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
Frequency (GHz)
10
12
14
16
18
20
22
24
26
28
30
4.50
5.00
5.50
6.00
6.50
Drain Voltage (V)
Figure 2. Output Power vs. Drain Voltage at f
o
= 34 GHz and a Pin = 14 dBm.
200mW Ka-Band Power Amplifier
MAAPGM0013-DIE
RO-P-DS-3058 - - 4/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 3. 1dB Compression Point vs. Drain Voltage
10
12
14
16
18
20
22
24
26
28
30
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
Frequency (GHz)
VDD = 6
VDD = 5
Figure 4. Small Signal Gain and VSWR vs. Frequency at V
DD
= 6V.
5
7
9
11
13
15
17
19
21
23
25
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
Frequency (GHz)
1
2
3
4
5
6
GAIN
Input VSWR
Output VSWR
200mW Ka-Band Power Amplifier
MAAPGM0013-DIE
RO-P-DS-3058 - - 5/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Pad
Size (
m)
Size (mils)
RF: IN, OUT
100 x 100
4 x 4
DC: VGG, VD1, VD2
150 x 150
6 x 6
Bond Pad Dimensions
Chip edge to bond pad dimensions are shown to the center of the bond pad.
Mechanical Information
Chip Size: 3.799 x 2.997 x 0.075 mm (150 x 118 x 3 mils)
Figure 5. Die Layout
0.150mm.
0.217mm.
0
0
1.516mm.
2.829mm.
2.997mm.
1
.
456m
m.
3.09
5mm.
3.654
m
m
.
3.799
m
m
.
1.515mm.
0.028
m
m
.
GN
D
:
G
GN
D
:
G
GND:G
G ND:G
GN
D
:
G
GN
D
:
G
GND:G
VD1
GN
D
:
G
GN
D
:
G
VG
GN
D
:
G
GN
D
:
G
IN
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GND:G
G ND:G
GN
D
:
G
G
ND:G
GN
D
:
G
G
ND:G
GN
D
:
G
GND:G
G ND:G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GND:G
G ND:G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GND:G
VD1
GN
D
:
G
GN
D
:
G
G
ND:G
G
ND:G
GN
D
:
G
G
ND:G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
G
ND:G
VG
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
G ND:G
G ND:G
GN
D
:
G
GN
D
:
G
G ND:G
GN
D
:
G
VD1
GN
D
:
G
GND:G
OUT
G ND:G
GN
D
:
G
VD1
G
ND:
G
G ND:G
GN
D
:
G
GN
D
:
G
G ND:G
GN
D
:
G
GN
D
:
G
G
N
D
:G
G
ND
:
G
GND:G
GND:G
GND:G
1.462mm.
3.100mm.
200mW Ka-Band Power Amplifier
MAAPGM0013-DIE
RO-P-DS-3058 - - 6/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 6. Recommended bonding diagram for pedestal mount.
Support circuitry typical of MMIC characterization fixture for CW testing.
Assembly Instructions:
Die attach: Use AuSn (80/20) 1-2 mil. preform solder. Limit time @ 300 C to less than 5 minutes.
Wirebonding: Bond @ 160 C using standard wedge bond techniques. For DC pad connections, use
either ball or wedge bonds.
Biasing Note: Must apply negative bias to V
GG
before applying positive bias to V
DD
to prevent
damage to amplifier.
100 pF
100 pF
100 pF
RF
IN
RF
OUT
0.1
F
V
GG
0.1
F
V
DD
GN
D
:
G
G
ND:
G
GND :G
GND:G
GN
D
:
G
GN
D
:
G
GND:G
VD1
GN
D
:
G
GN
D
:
G
VG
GN
D
:
G
GN
D
:
G
IN
GN
D
:
G
GN
D
:
G
GN
D
:
G
G
ND:
G
G
ND:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GND :G
GND:G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GND :G
GND:G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GND :G
GND:G
GN
D
:
G
G
ND:
G
GN
D
:
G
GND:G
VD1
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
G
ND:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
G
ND:
G
GN
D
:
G
GN
D
:
G
G
ND:
G
GN
D
:
G
VG
GN
D
:
G
G
ND:
G
GN
D
:
G
GN
D
:
G
GND:G
GN D:G
GN
D
:
G
GN
D
:
G
GND:G
GN
D
:
G
VD2
G
ND:
G
GND:G
OUT
GND:G
GN
D
:
G
VD2
G
ND:
G
GND:G
G
ND:
G
GN
D
:
G
GND:G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GN
D
:
G
GND:G
GND:G
GND:G
100 pF
100 pF
100 pF
250
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