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Электронный компонент: MAAPGM0016-DIE

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5W X/Ku-Band Power Amplifier
11.5-15.0 GHz
MAAPGM0016-DIE
11.5-15.0 GHz GaAs MMIC Amplifier
RO-P-DS-3008 - -
Preliminary Information
Features
11.5-15.0 GHz Operation
5 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
MESFET Process
Primary Applications
Point-to-Point Radio
SatCom
DBS
Description
The
MAAPGM0016-Die
is a 3-stage 5 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.

Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM's repeat-
able, high performance and highly reliable GaAs Multifunction
Self-Aligned Gate (MSAG
) MESFET Process. This process
features silicon nitride passivation and polyimide scratch protec-
tion.
Electrical Characteristics: T
B
= 40C
1
, Z
0
= 50
, V
DD
= 8V, V
GG
= -2V, P
in
= 23 dBm

1. T
B
= MMIC Base Temperature
Parameter
Symbol
Typical
Units
Bandwidth
f
11.5-15.0 GHz
Output Power
P
OUT
37 dBm
Power Added Efficiency
PAE
24 %
1-dB Compression Point
P1dB
36 dBm
Small Signal Gain
Gn
18 dB
Input VSWR
VSWR
3:1
Gate Current
I
GG
< 2
mA
Drain Current
I
DD
<3.5 A
2
nd
Harmonic
2f
-40
dBc
3
rd
Harmonic
3f
-75
dBc
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RO-P-DS-3008 - - 2/6
5W X/Ku-Band Power Amplifier
MAAPGM0016-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8.0 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ 2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Maximum Operating Conditions
1
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
V
DD
4.0
8.0 10.0 V
Gate Voltage
V
GG
-2.3
-2.0 -1.5 V
Input Power
P
IN
25.0
dBm
Junction Temperature
T
J
150
C
MMIC Base Temperature
T
B
Note
2
C
Recommended Operating Conditions
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
28
dBm
Drain Supply Voltage
V
DD
+12.0
V
Gate Supply Voltage
V
GG
-3.0 V
Quiescent Drain Current (No RF)
I
DQ
2.5 A
Quiescent DC Power Dissipated (No RF)
P
DISS
20.3 W
Junction Temperature
T
J
150 C
Storage Temperature
T
STG
-55 to +150
C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
2. Maximum MMIC Base Temperature = 150C-- 3.9C/W * V
DD
* I
DQ
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RO-P-DS-3008 - - 3/6
5W X/Ku-Band Power Amplifier
MAAPGM0016-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V
and P
in
= 23 dBm.
0
10
20
30
40
50
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
Frequency (GHz)
0
10
20
30
40
50
POUT
PAE
0
10
20
30
40
50
4
5
6
7
8
9
10
Drain Voltage (volts)
0
10
20
30
40
50
POUT
PAE
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 13 GHz.
background image
RO-P-DS-3008 - - 4/6
5W X/Ku-Band Power Amplifier
MAAPGM0016-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 4. Small Signal Gain and Input VSWR vs. Frequency at V
DD
= 8V.
5
10
15
20
25
30
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
Frequency (GHz)
1
2
3
4
5
6
GAIN
VSWR
Figure 3. 1dB Compression Point vs. Drain Voltage
0
10
20
30
40
50
11.0
11.5
12.0
12.5
13.0
13.5
14.0
14.5
15.0
15.5
Frequency (GHz)
VDD = 4
VDD = 6
VDD = 8
background image
RO-P-DS-3008 - - 5/6
5W X/Ku-Band Power Amplifier
MAAPGM0016-DIE
V 1.00
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America:
Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Mechanical Information
Chip Size: 4.206 x 4.404 x 0.075 mm
(
166 x 173 x 3 mils)
Pad
Size (
m)
RF In and Out
100 x 200
DC Drain Supply Voltage V
D1
200 x 150
DC Gate Supply Voltage V
GG
150 x 150
Size (mils)
4 x 8
8 x 6
6 x 6
DC Drain Supply Voltage V
D2
500 x 150
20 x 6
Bond Pad Dimensions
Figure 5. Die Layout
0.219mm.
0.656m
m.
0
0
2.202mm.
4.186mm.
4.186mm.
2.202mm.
0.656
mm.
1.556
mm.
3.879
mm.
4.206
mm.
0.219mm.
1.556m
m.
0.152
mm.
IN
V
GG
V
D1
V
D2
OU
T
V
D2
V
D1
V
GG
3.879m
m.
4.053m
m.
4.404mm.