0.6W L/S-Band Power Amplifier
0.8-3.3 GHz
MAAPGM0026-DIE
0.8-3.3 GHz GaAs MMIC Amplifier
RO-P-DS-3013 - -
Preliminary Information
Features
0.8-3.3 GHz Operation
0.6 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
MESFET Process
Primary Applications
2.5-2.7 GHz MMDS
GPS
Description
The
MAAPGM0026-Die
is a 2-stage, 0.6 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM's repeatable,
high performance and highly reliable GaAs Multifunction Self-
Aligned Gate (MSAG
) MESFET Process. This process features
silicon nitride passivation and polyimide scratch protection.
Electrical Characteristics: T
B
= 40C
1
, Z
0
= 50
, V
DD
= 8V, V
GG
= -2V, P
in
= 12 dBm
1. T
B
= MMIC Base Temperature
Parameter
Symbol
Typical
Units
Bandwidth
f
0.8-3.2 GHz
Output Power
P
OUT
28 dBm
Power Added Efficiency
PAE
25 %
1-dB Compression Point
P1dB
27 dBm
Small Signal Gain
G
20 dB
Input VSWR
VSWR
1.7:1
Gate Current
I
GG
< 10
mA
Drain Current
I
DD
< 300
mA
Output Third Order Intercept
OTOI
36
dBm
Noise Figure
NF
6
dB
2
nd
Harmonic
2f
-15
dBc
3
rd
Harmonic
3f
-25
dBc
RO-P-DS-3013 - -
2/6
0.6 W L/S-Band Power Amplifier
MAAPGM0026-DIE
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Maximum Operating Conditions
1
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ 2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
V
DD
4.0
8.0 10.0 V
Gate Voltage
V
GG
-2.3
-2.0 -1.5 V
Input Power
P
IN
15.0
dBm
Junction Temperature
Tj
150
C
MMIC Base Temperature
T
B
Note
2
C
Recommended Operating Conditions
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
17.0
dBm
Drain Supply Voltage
V
DD
+12.0
V
Gate Supply Voltage
V
GG
-3.0
V
Quiescent Drain Current (No RF)
I
DQ
360
mA
Quiescent DC Power Dissipated (No RF)
P
DISS
2.4
W
Junction Temperature
T
j
180
C
Storage Temperature
T
STG
-55 to +150
C
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
2. Maximum MMIC Base Temperature = 150C-- 33.1C/W * V
DD
* I
DQ
RO-P-DS-3013 - -
3/6
0.6 W L/S-Band Power Amplifier
MAAPGM0026-DIE
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
0
10
20
30
40
50
4
5
6
7
8
9
10
Drain Voltage (V)
0
10
20
30
40
50
POUT
PAE
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 2.25 GHz.
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 8V
and P
in
= 12 dBm.
0
10
20
30
40
50
0.75
1.25
1.75
2.25
2.75
3.25
3.75
Frequency (GHz)
0
10
20
30
40
50
POUT
PAE
RO-P-DS-3013 - -
4/6
0.6 W L/S-Band Power Amplifier
MAAPGM0026-DIE
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 3. 1dB Compression Point vs. Drain Voltage
0
10
20
30
40
50
0.75
1.25
1.75
2.25
2.75
3.25
3.75
Frequency (GHz)
VDD = 4
VDD = 6
VDD = 8
VDD = 10
Figure 4. Small Signal Gain and Input VSWR vs. Frequency at V
DD
= 8V.
5
10
15
20
25
30
0.75
1.25
1.75
2.25
2.75
3.25
3.75
Frequency (GHz)
1
2
3
4
5
6
GAIN
VSWR
RO-P-DS-3013 - -
5/6
0.6 W L/S-Band Power Amplifier
MAAPGM0026-DIE
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Mechanical Information
Chip Size: 2.980 x 1.580 x 0.075 mm
(
117 x 62 x 3 mils)
Pad
Size (
m)
RF In and Out
100 x 200
DC Drain Supply Voltage VDD
200 x 150
DC Gate Supply Voltage VGG
150 x 150
Size (mils)
4 x 8
8 x 6
6 x 6
Bond Pad Dimensions
Figure 5. Die Layout
0.202mm.
1.49
0
m
m
.
0
0
0.840mm.
1.378mm.
1.580mm.
1.4
9
0mm.
2
.
980mm.
0.840mm.
2.85
3
m
m
.
0.1
7
7mm.
IN
V
DD
V
GG
OUT
Chip edge to bond pad dimensions are shown to the center of the bond pad.
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