1.2W C/Ku-Band Power Amplifier
7.5-13.0 GHz
MAAPGM0051-DIE
7.5-13.0 GHz GaAs MMIC Amplifier
RO-P-DS-3024 - -
Preliminary Information
Features
7.5-13.0 GHz Operation
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
MESFET Process
Primary Applications
Point-to-Point Radio
Weather Radar
Airborne Radar
Description
The
MAAPGM0051-DIE
is a 2-stage 1 W power amplifier with
on-chip bias networks. This product is fully matched to 50
ohms on both the input and output. It can be used as a power
amplifier stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure
performance compliance. The part is fabricated using M/A-
COM's repeatable, high performance and highly reliable GaAs
Multifunction Self-Aligned Gate (MSAG
) MESFET Process.
This process features silicon nitride passivation and polyimide
scratch protection.
Electrical Characteristics: T
B
= 40C
1
, Z
0
= 50
, V
DD
= 10V, V
GG
= -2V, P
in
= 18 dBm
1. T
B
= MMIC Base Temperature
Parameter
Symbol
Typical
Units
Bandwidth
f
7.5-13.0 GHz
Output Power
P
OUT
31 dBm
Power Added Efficiency
PAE
35 %
1-dB Compression Point
P1dB
30 dBm
Small Signal Gain
G
15 dB
VSWR VSWR 2:1
Gate Current
I
GG
< 4
mA
Drain Current
I
DD
<400 mA
Output Third Order Intercept
OTOI
37
dBm
Noise Figure
NF
9
dB
2
nd
Harmonic
2f
-17
dBc
3
rd
Harmonic
3f
-28
dBc
1.2W C/Ku-Band Power Amplifier
MAAPGM0051-DIE
RO-P-DS-3024 - - 2/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Maximum Operating Conditions
1
Operating Instructions
This device is static sensitive. Please handle with
care. To operate the device, follow these steps.
1. Apply V
GG
= -2 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 10.0 V.
3. Adjust
V
GG
to set I
DQ
, (approximately @ 2 V).
4. Set RF input.
5.
Power down sequence in reverse. Turn gate
voltage off last.
Characteristic
Symbol
Min
Typ
Max
Unit
Drain Voltage
V
DD
4.0
10.0 10.0 V
Gate Voltage
V
GG
-2.3
-2.0 -1.5 V
Input Power
P
IN
21.0
dBm
Junction Temperature
T
J
150
C
MMIC Base Temperature
T
B
Note
2
C
Recommended Operating Conditions
Parameter
Symbol
Absolute Maximum
Units
Input Power
P
IN
23.0
dBm
Drain Supply Voltage
V
DD
+12.0
V
Gate Supply Voltage
V
GG
-3.0
V
Quiescent Drain Current (No RF)
I
DQ
380
mA
Junction Temperature
T
J
180
C
Storage Temperature
T
STG
-55 to +150
C
Quiescent DC Power Dissipated (No RF)
P
DISS
2.5
W
1. Operation outside of these ranges may reduce product reliability. Operation at other than the typical values may
result in performance outside the guaranteed limits.
2. Maximum MMIC Base Temperature = 150C -- 32.1 C/W * V
DD
* I
DQ
1.2W C/Ku-Band Power Amplifier
MAAPGM0051-DIE
RO-P-DS-3024 - - 3/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 1. Output Power and Power Added Efficiency vs. Frequency at V
DD
= 10V
and Pin = 18 dBm.
0
10
20
30
40
50
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
Frequency (GHz)
0
10
20
30
40
50
POUT
PAE
0
10
20
30
40
50
4
5
6
7
8
9
10
Drain Voltage (V)
0
10
20
30
40
50
POUT
PAE
Figure 2. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at f
o
= 10 GHz.
1.2W C/Ku-Band Power Amplifier
MAAPGM0051-DIE
RO-P-DS-3024 - - 4/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 3. 1dB Compression Point vs. Drain Voltage
0
10
20
30
40
50
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
Frequency (GHz)
VDD = 4
VDD = 6
VDD = 8
VDD = 10
Figure 4. Small Signal Gain and Input VSWR vs. Frequency at V
DD
= 10V.
5
10
15
20
25
30
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
12.5
13.0
13.5
Frequency (GHz)
1
2
3
4
5
6
GAIN
VSWR
1.2W C/Ku-Band Power Amplifier
MAAPGM0051-DIE
RO-P-DS-3024 - - 5/6
Specifications subject to change without notice.
Customer Service: Tel. (888)-563-3949
Email: macom_adbu_ics@tycoelectronics.com
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Pad
Size (
m)
RF In and Out
100 x 200
DC Drain Supply Voltage VDD
200 x 150
DC Gate Supply Voltage VGG
150 x 150
Size (mils)
4 x 8
8 x 6
6 x 6
Bond Pad Dimensions
Chip edge to bond pad dimensions are shown to the center of the bond pad.
G
ND:G
GND:G
GND:G
IN
OU
T
V
DD
V
DD
0.152 mm.
1.490 mm.
2.828 mm.
2.980 mm.
0.160 mm.
1.490 mm.
2.828 mm.
0
.
316 mm.
2.30
3 mm
.
0
.
127
mm.
0.31
6 mm
.
2
.
303
mm.
2
.
480
mm.
0
0
V
GG
V
GG
2.35
3 mm
.
Mechanical Information
Chip Size: 2.480 x 2.980 x 0.075 mm
(
98 x 117 x 3 mils)
Figure 5. Die Layout
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