Features
Low Harmonic Knee Voltage < 2.5V
Low Harmonics > 65 dBc at +34 dBm & 1 GHz
Low Insertion Loss 0.45 dB at 1 GHz
High Isolation 18.5 dB at 2 GHz
FQFP 12-lead 3x3mm Low Profile Package
0.5 micron GaAs pHEMT Process
Description
M/A-COM's MASWSS0033 is a GaAs PHEMT MMIC
SP3T high power switch in a low cost miniature FQFP
12-lead 3x3mm thin profile package. This package
represents a lower profile than standard FQFP style,
featuring a 0.8mm maximum thickness.
The MASWSS0033 is ideally suited for applications
where high power, low control voltage, low insertion
loss, high isolation, small size and low cost are re-
quired. Typical applications are for GSM and DCS
handset systems that connect separate transmit and
receive functions to a common antenna, as well othe
handset and related applications. This part can be
used in all systems operating up to 2.5 GHz requiring
high power at low control voltage.
The MASWSS0033 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process fea-
tures full passivation for performance and reliability.
GaAs SP3T 2.5V High Power Switch
DC - 2.5 GHz
MASWSS0033
PIN
No.
PIN Name
Description
1
V3
Control 3
2
RF3
RF Port 3
3
GND
RF Ground
4
GND
RF Ground
5
RF2
RF Port 2
6
V2
Control 2
7
GND
RF Ground
8
RF1
RF Port 1
9
V1
Control 1
10
GND
RF Ground
11
ANT
Antenna Port
12
GND
RF Ground
13
GND (paddle)
RF Ground
Functional Schematic
Pin Configuration
Preliminary
Feb 12 2002
Parameter
Absolute
Maximum
Max Input Power (0.5 - 2.5 GHz,
2.5V Control)
+38 dBm
Operating Voltage
+8.5 volts
Operating Temperature
-40
o
C to +85
o
C
Storage Temperature
-65
o
C to +150
o
C
Absolute Maximum Ratings
1
1. Exceeding any one or combination of these limits may
cause permanent damage.
AN
T
RF
2
RF3
RF1
V1
GND
GND
V3
V2
GN
D
100 pF
100 p
F
100 pF
10
0 pF
GN
D
GN
D
PIN 1
GaAs SP3T 2.5V High Power Switch
MASWSS0033
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 1.04
2
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC 1 GHz
1 2 GHz
2 - 2.5 GHz
dB
dB
dB
0.5
0.6
0.8
0.65
0.8
1.0
Isolation
DC 1 GHz
1 2 GHz
2 - 2.5 GHz
dB
dB
dB
23
18
15
25
18.5
16
Return Loss
DC 2.5 GHz
dB
20
P1dB
Vc = 0V/2.5V
dBm
38
2
nd
Harmonic
1 GHz, P
IN
= +34 dBm, Vc = 0V/2.5V
dBc
65
3
rd
Harmonic
1 GHz, P
IN
= +34 dBm, Vc = 0V/2.5V
dBc
65
Trise, Tfall
10% to 90% RF, 90% to 10% RF
S
1
Ton, Toff
50% control to 90% RF, and 50% control to 10% RF
S
1
Transients
In Band
mV
10
Gate Leakage
|Vc| = 2.5V
uA
100
Cross Modulation
ANT - CELL
3
ANT - PCS
3
Two Tone +22 dBm, 1 MHz Spacing, 820 MHz,
Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz,
dBm
dBm
59
57
Cross Modulation
ANT - CELL
ANT - PCS
Two Tones +22 dBm @ 820 & 821 MHz,
One Tone 27 dBm @ 865 MHz
Two Tones +17 dBm @ 1950 & 1951 MHz,
One Tone 27 dBm @ 1870 MHz
dBm
dBm
-108
TBD
2.
Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for
0.5 GHz - 2.5 GHz.
V1
V2
V3
ANT RF1
ANT - RF2
ANT - RF3
+2.5 to +5V
0 + 0.2V
0 + 0.2V
On
Off
Off
0 + 0.2V
+2.5 to +5V
0 + 0.2V
Off
On
Off
0 + 0.2V
0 + 0.2V
+2.5 to +5V
Off
Off
On
Truth Table
4
4.
External DC blocking capacitors are required on all RF ports
3.
IP3 slope versus input power is approximately 1.5:1.
GaAs SP3T 2.5V High Power Switch
MASWSS0033
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 1.04
Typical Performance Curves
3
Insertion Loss vs. Frequency,
25
o
C, 100 pF
Isolation vs. Frequency,
25
o
C, 100 pF
Harmonic Rejection vs. Frequency,
25
o
C, 100 pF
-85
-80
-75
-70
-65
-60
2
3
4
5
Vctrl (V)
3rd Harmonic
2nd Harmonic
Pin = +34 dBm @ 1 GHz
-1
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
0.5
1
1.5
2
2.5
Frequency (GHz)
-35
-30
-25
-20
-15
-10
-5
0
0.5
1
1.5
2
2.5
Frequency (GHz)
GaAs SP3T 2.5V High Power Switch
MASWSS0033
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 1.04
FQFP 12-lead 3x3 mm Low Profile
4
GaAs SP3T 2.5V High Power Switch
MASWSS0033
Specifications subject to change without notice.
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
V 1.04
Handling Procedures
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
5
Ordering Information
Part Number
Package
MASWSS0033
FQFP-N 12-lead Thin Plastic Package
MASWSS0033TR
1000 piece reel
MASWSS0033SMB
Sample Test Board
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