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Электронный компонент: NJM12904V

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Features
Input and Output matched to 50
RC bias circuit included
Dual NPN Silicon class C power transistors
Soft substrate
r
= 10.5
Hermetic Package
Nickel plated copper flange
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches .005" (millimeters 0.13mm)
Electrical Specifications at 25C
=
=
=
=
Absolute Maximum Rating at 25C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
65
V
Emitter-Base Voltage
V
EBO
3.0
V
Junction Temperature
T
j
200
C
Thermal Resistance
JC
0.35
C/W
Operating Flange Temp.
T
C
-10 to +100
C
Storage Temperature
T
STG
-20 to +125
C
Symbol
Parameter
Test Conditions
Units
Min
Typ
Max
P
out
Output Power
V
CC
= 38V, P
IN
= 34W, f = 2.7, 2.9, 3.1 GHz
W
190
205
G
p
Power Gain
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
dB
7.5
8
C
Collector Efficiency
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
%
33
35
RL
Input Return Loss
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
dB
10
Droop
Pulse Amplitude Droop
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
dB
1
2fc
2
nd
Harmonic
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
dBc
-17
-20
Spurious
Spurious Level
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
dBc
-50
Insertion Phase Deviation
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
Deg.
-20
+20
VSWR-T
Tolerance and Stability
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
VSWR
1.5:1
OD-STAB
Stability at Overdrive
P
IN
= (P
IN
@ P
OUT
= 190W) + 1 dB
1
GF
Gain Flatness over Frequency
V
CC
= 38V, P
OUT
= 190W, f = 2.7, 2.9, 3.1 GHz
dB
1.0
1.3
Description
M/A-COM's PHA2731-190M is a Class C microwave power
amplifier module specifically designed for S-Band radar pulsed
power applications where high efficiency and saturated power
are required. The module incorporates two in-phase combined
common base hybrid power transistors and is input and output
matched to 50
for unparalleled ease of PA design. The thick
copper base and ceramic transistor packaging technology pro-
vides for excellent thermal management, which when combined
with M/A-COM's mature transistor fabrication technology re-
sults in the highest reliability available.
1. No oscillations and no spurs at 1 dB overdrive.
Radar Pulsed Power Amplifier--190 Watts
2.7--3.1 GHz, 200s Pulse, 10% Duty
PHA2731-190M
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 2.0
1
0
50
100
150
200
250
300
5
15
25
35
45
P
IN
(Watts)
P
OU
T
(W
atts)
20
30
40
50
60
70
80
C
o
llector
E
fficiency (%
)
Pout 2.7GHz
Pout 2.9GHz
Pout 3.1GHz
Eff. 2.7GHz
Eff. 2.9GHz
Eff. 3.1GHz
7
7.5
8
8.5
9
9.5
10
2.7
2.8
2.9
3
3.1
FREQUENCY (GHz)
G
A
IN
(dB
)
20
25
30
35
40
45
50
C
o
llector
E
fficiency (%)
Gain
Eff.
Amplifier in RF Test Fixture
Typical Performance Curves
Performance at 190W P
OUT
, V
CC
=38V, 200 s, 10%
Performance vs. P
IN
, 38 V
CC
=38V, 200 s, 10%
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 2.0
Radar Pulsed Power Amplifier--190 Watts, 2.7-3.1 GHz, 200s Pulse, 10% Duty
PHA2731-190M
V
CC
RF OUT
RF IN
V
CC
2