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Электронный компонент: PE3

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Specifications Subject to Change Without Notice.
M/A-COM Inc.
1
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 3 3263-8761
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883 Fax +81 3 3263-8769
Fax +44 (1344) 300-020
GaAs Foundry Services
PROCESS PE3
PE3
V2.00
Features
0.5
m MBE MESFET Technology for High Power
Applications
MMICs up to 18 GHz
100 mm wafer diameter
Layout and design assistance
Space qualification
Custom test and packaging
Description
M/A-COM's PE3 process utilizes molecular beam epitaxy (MBE) to
implement a MESFET active layer structure that achieves high
efficiency and breakdown for multi-watt power applications thru
18GHz. The focus is on products for moderate to high volume
applications. M/A-COM offers a full compliment of foundry
services to meet the requirements for custom designing a MMIC-
based die or packaged product.
Typical RF Performance
FC06 (6X150) 900 um FET
Param.
Test Conditions
Freq.
Typ. Val.
MAG
V
DS
= 8V, I
DS
= .40I
DSS
2/12GHz
22/13.5dB
P
SAT
V
DS
= 8V, I
DS
= .40I
DSS
2/12GHz
680/525mW/mm
PAE
V
DS
= 8V, I
DS
= .40I
DSS
2/12GHz
50/41%
ft
V
DS
= 8V, I
DS
= .40I
DSS
------
20GHz
Ordering Information
Part Number
Description
FE43-0001
PE3 Wafer
SVC6310
Mask Set
Electrical Specifications:
T
A
= +25

C
Parameter
Test Conditions
Units
Min.
Typ.
Max.
200um PCM FET
IDSS
VDS = 3V, VGS = 0V
mA/mm
180
240
310
DC GM
VDS = 3V, IDS = 0.5IDSS
mS/mm
125
150
185
Vp
VDS = 3V, IDS = 0.025IDSS
V
-1.2
-1.8
-2.2
BVgd
IG = 0.1mA/mm
V
-11
-15
-
RF GM
VDS = 3V, IDS = 0.5IDSS
mS
25
32
45
Cgs
VDS = 3V, IDS = 0.5IDSS
pF
.140
.200
.280
Cgd
VDS = 3V, IDS = 0.5IDSS
pF
.015
.022
.028
Cds
VDS = 3V, IDS = 0.5IDSS
pF
.025
.038
.050
Ft
VDS = 3V, IDS = 0.5IDSS
GHz
20
26
34
Sheet Resistances
NDRS (N- GaAs)
l = 20mA
Ohms/sq
340
375
410
NCRS (NiCr)
l = 10mA
Ohms/sq
42
50
58
GFRS (Gate Metal)
l = 20mA
Ohms/sq
-
.027
.040
MIM Capacitors
Capacitance/unit area
f = 1MHz
pF/mm
2
360
400
440
Capacitor Leakage
V = 10V
A
-
-
0.5
GaAs Foundry Services
Process PE3
V2.00
Specifications Subject to Change Without Notice.
2
M/A-COM Inc.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 3 3263-8761
Europe:
Tel. +44 (1344) 869-595
Fax (800) 618-8883 Fax +81 3 3263-8769
Fax +44 (1344) 300-020
Normalized Nominal Models
Parameter
25% I
DSS
8 V
DS
50% I
DSS
8 V
DS
I
DS
mA/mm
62.62
127.96
g
m
mS/mm
140.37
155.44
C
gs
pF/mm
1.178
1.303
C
gd
pF/mm
0.072
0.059
C
ds
pF/mm
0.172
0.185
T
d
pS
5.574
5.502
R
i
Ohms-mm
2.093
1.729
G
ds
mS/mm
9.214
7.929
G
gs
mS/mm
0.168
0.093
R
g
Ohms/mm
47.996
47.996
R
s
Ohms-mm
0.827
0.827
R
d
Ohms-mm
0.865
0.865
L
g
nH/Finger
0.108
0.108
L
d
nH/Finger
0.108
0.108
C
gp
pF/mm
0.148
0.148
C
dp
pF/mm
0.148
0.148
Mask Layer Assignments
LAYER
PROCESS
CODE
PROCESS
DESCRIPTION
3
OH
Ohmic
4
BI
Boron Isolation
5
RD
Resistor Deposition
7
GF
Gate Finger
8
GL
Gate Interconnect
10
TV
Top via
11
OL
Overlay
12
AP
Air-post
13
AS
Air-Span
25
BV
Back-via
28
FP
Final Passivation
29
ST
Saw Street
NOTE: Unused layer numbers are reserved for future use.
GMAX - 900um FET