Wireless Power Transistor 15 Watts, 850-960 MHz
PH0810-15
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
Designed for Linear Amplifier Applications
Class AB: -30 dBc Typ 3rd IMD at 15 Watts PEP
Common Emitter Configuration
Internal Input Impedance Matching
Diffused Emitter Ballasting
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches .005" (millimeters 0.13mm)
Electrical Specifications at 25C
Wireless Power Transistor
15 Watts, 850 - 960 MHz
PH0810-15
0.975 (24.77)
0.725 (18.42)
0.360 (9.14)
COLLECTOR
EMITTER
EMITTER
0.130 (3.30)
0.120 (3.05)
0.078 (1.98)
.100
.010
(2.54
.25)
.100
.010
(2.54
.25)
0.230
(5.84)
EMITTER
EMITTER
BASE
.253
.010
(6.43
.25)
.166
.010
(4.22
.25)
.0045
.0015
(.11
.04)
0.110 (2.79)
Absolute Maximum Rating at 25C
Parameter
Symbol
Rating
Units
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CES
60
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current
I
C
1.8
A
Dissipation @ 25C
P
D
43
W
Storage Temperature
T
stg
-55 to +150
C
Junction Temperature
T
j
200
C
Thermal Resistance
j
c
3.5
C/W
Typical Optimum Device Impedance
F (MHz)
Z
in
(
)
Z
load
(
)
850
2.5 + j3.6
4.3 + j2.6
900
2.9 + j2.4
4.4 + j3.4
960
1.5 + j2.0
4.3 + j3.9
INPUT
NETWORK
OUTPUT
NETWORK
ZIN
Z
LOAD
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CES
Collector-Emitter Breakdown
I
C
=15mA
60
-
V
I
CES
Collector-Emitter Leakage
V
CE
=24.0 V
-
2.0
mA
BV
CEO
Collector-Emitter Breakdown
I
C
=40 mA
24
-
V
BV
EBO
Emitter-Base Breakdown
I
B
=2.5 mA
3.0
-
V
h
FE
DC Forward Current Gain
V
CE
=5.0 V, I
C
=0.5 A
15
120
-
G
P
Power Gain
V
CC
=24 V, I
CQ
=100 mA, Pout= 15W, f=900 MHz
12
-
dB
Collector Efficiency
V
CC
=24 V, I
CQ
=100 mA, Pout= 15W, f=900 MHz
50
-
%
R
L
Input Return Loss
V
CC
=24 V, I
CQ
=100 mA, Pout=15W, f=900 MHz
10
-
dB
VSWR
Load Mismatch Tolerance
V
CC
=24 V, I
CQ
=100 mA, Pout=15W PEP, f=900 MHz,
f=100 kHz
-
10:1
-
IMD
3
3rd Order IMD
V
CC
=24 V, I
CQ
=100 mA, Pout=15W PEP, f=900 MHz,
f=100 kHz
-
-30
dBc
Wireless Power Transistor 15 Watts, 850-960 MHz
PH0810-15
M/A-COM Division of AMP Incorporated n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Electrical Schematic
1
Notes:
1. Dimensions are in mils.
Electrical Schematic Parts List
C1, C2, C3
100 pF ATC Size A
C4
5000 pF ATC Size B
C5
50 uF 50 Volts
CR1
Diode cathode tied to flange (Harris 1N4245)
Q1
PH0810-15
R1
5 Ohms W
RL1
10T / No. 22 AWG on 3.1 Ohm Watt
Board Type
Rogers 6010.5 .025" thick, E
R
= 10.5
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