Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250
s Pulse, 10 % Duty
PH1090-350L
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches .005" (millimeters 0.13mm)
Electrical Specifications at 25C
Avionics Pulsed Power Transistor - 350 Watts,
1030-1090 MHz, 250
s Pulse, 10% Duty
PH1090-350L
Absolute Maximum Rating at 25C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
80
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
17
A
Total Power Dissipation
@ +25C
P
TOT
750
W
Storage Temperature
T
stg
-65 to +200
C
Junction Temperature
T
j
200
C
Narrowband Test Fixture Impedance
F (MHz)
Z
IF
(
)
Z
OF
(
)
1090
2.5 - j1.5
1.1 + j0.9
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CES
Collector-Emitter Breakdown
I
C
=250mA
80
-
V
I
CES
Collector-Emitter Leakage
V
CE
=45 V
-
25
mA
R
TH(JC)
Thermal Resistance
V
CC
=45 V, P
in
=350 W, f=1090 MHz
-
0.2
C/W
P
in
Input Power
V
CC
=45 V, P
in
=350 W, f=1090 MHz
-
55
W
G
P
Power Gain
V
CC
=45 V, P
in
=350 W, f=1090 MHz
8.0
-
dB
Collector Efficiency
V
CC
=45 V, P
in
=350 W, f=1090 MHz
55
-
%
R
L
Input Return Loss
V
CC
=45 V, P
in
=350 W, f=1090 MHz
9
-
dB
VSWR-T
Load Mismatch Tolerance
V
CC
=45 V, P
in
=350 W, f=1090 MHz
-
2:1
-
VSWR-S
Load Mismatch Stability
V
CC
=45 V, P
in
=350 W, f=1090 MHz
-
1.5:1
-
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM's PH1090-350L is a silicon bipolar NPN power
transistor intended for use in L-band, 1.2 - 1.4 GHz avionics
equipment such as IFF, mode-S and TCAS systems. Designed
for common-base, class C, broadband pulsed power applica-
tions, the PH1090-350L delivers 7.5 dB of gain at 350 watts of
output power when operating with long pulse length (250S), at
10 percent duty cycle. The transistor is housed in a 2-lead,
rectangular metal-ceramic flange package, with internal input
and output impedance matching networks. Diffused emitter
ballast resistors and gold metalization assure ruggedness and
long-term reliability.
Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250
s Pulse, 10 % Duty
PH1090-350L
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
PDF 
ZIP