Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10
s Pulse, 1 % Duty
PH1090-550S
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
Designed for Short Pulse IFF Applications
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches .005" (millimeters 0.13mm)
Electrical Specifications at 25C
Avionics Pulsed Power Transistor - 550 Watts,
1030-1090 MHz, 10
s Pulse, 1% Duty
PH1090-550S
Absolute Maximum Rating at 25C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
80
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
28
A
Total Power Dissipation
@ +25C
P
TOT
1800
W
Storage Temperature
T
stg
-65 to +200
C
Junction Temperature
T
j
200
C
Broadband Test Fixture Impedance
F (MHz)
Z
IF
(
)
Z
OF
(
)
1030
4.0 - j3.5
1.4 - j1.6
1090
3.6 - j2.7
1.1 - j1.9
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CES
Collector-Emitter Breakdown
I
C
=250mA
80
-
V
I
CES
Collector-Emitter Leakage
V
CE
=45 V
-
25
mA
R
TH(JC)
Thermal Resistance
V
CC
=50 V, P
out
=550 W, f=1090 MHz
-
0.05
C/W
P
in
Input Power
V
CC
=50 V, P
out
=550 W, f=1090 MHz
-
100
W
G
P
Power Gain
V
CC
=50 V, P
out
=550 W, f=1090 MHz
7.5
-
dB
Collector Efficiency
V
CC
=50 V, P
out
=550 W, f=1090 MHz
55
-
%
R
L
Input Return Loss
V
CC
=50 V, P
out
=550 W, f=1090 MHz
9
-
dB
VSWR-T
Load Mismatch Tolerance
V
CC
=50 V, P
out
=550 W, f=1090 MHz
-
10:1
-
VSWR-S
Load Mismatch Stability
V
CC
=50 V, P
out
=550 W, f=1090 MHz
-
1.5:1
-
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM's PH1090-550S is a silicon bipolar NPN transistor
intended for use in L-band, 1.2 - 1.4 GHz avionics equipment
such as IFF, mode-S and TCAS systems. Designed for
common-base, class C broadband pulsed power applications, the
PH1090-550S delivers 7.5 dB of gain at 550 watts of output
power when operating with short pulse length (10S), at 1
percent duty cycle. The transistor is housed in a 2-lead, rectan-
gular metal-ceramic flange package, with internal input and
output impedance matching networks. Diffused emitter ballast
resistors and gold metalization assure ruggedness and long-term
reliability.
Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10
s Pulse, 1 % Duty
PH1090-550S
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
PDF 
ZIP