Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3
s Pulse, 30% Duty
PH1113-100
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches .005" (millimeters 0.13mm)
Electrical Specifications at 25C
Radar Pulsed Power Transistor - 100 Watts,
1.1-1.3 GHz, 3
s Pulse, 30% Duty
PH1113-100
Absolute Maximum Rating at 25C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
70
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
9.0
A
Total Power Dissipation
@ +25C
P
TOT
350
W
Storage Temperature
T
stg
-65 to +200
C
Junction Temperature
T
j
200
C
Broadband Test Fixture Impedance
F (GHz)
Z
IF
(
)
Z
OF
(
)
1.1
5.8 - j3.4
3.0 - j1.7
1.2
5.6 - j1.8
3.0 - j1.5
1.3
5.9 - j0.4
2.8 - j1.3
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CES
Collector-Emitter Breakdown Voltage
I
C
= 5 mA
70
-
V
I
CES
Collector-Emitter Leakage Current
V
CE
= 32 V
-
10.0
mA
R
TH(JC)
Thermal Resistance
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
-
0.5
C/W
P
IN
Input Power
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
-
16
W
G
P
Power Gain
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
8.0
-
dB
Collector Efficiency
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
52
-
%
RL
Input Return Loss
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
9
-
dB
VSWR-T
Load Mismatch Tolerance
V
CC
= 32V, P
O
= 100 W, f = 1100, 1200, 1300 MHz
-
3:1
-
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM's PH1113-100 is a silicon bipolar NPN power tran-
sistor intended for use in L-band 1.1 - 1.3 GHz pulsed radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1113-100 can produce 25 watts of output
power with short pulse length (3S) at 30 percent duty cycle.
The transistor is housed in a 2-lead rectangular metal-ceramic
flange package, with internal input and output impedance match-
ing networks. Diffused emitter ballast resistors and gold metal-
ization assure ruggedness and long-term reliability.
Radar Pulsed Power Transistor 100 Watts, 1.1-1.3 GHz, 3
s Pulse, 30% Duty
PH1113-100
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
PDF 
ZIP