Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150
s Pulse, 10% Duty
PH1214-110M
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches .005" (millimeters 0.13mm)
Electrical Specifications at 25C
Radar Pulsed Power Transistor - 110 Watts,
1.20-1.40 GHz, 150
s Pulse, 10% Duty
PH1214-110M
Absolute Maximum Rating at 25C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
70
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
10.5
A
Total Power Dissipation
@ +25C
P
TOT
300
W
Storage Temperature
T
stg
-65 to +200
C
Junction Temperature
T
j
200
C
Broadband Test Fixture Impedance
f (GHz)
Z
IF
(
)
Z
OF
(
)
1.20
4.7 - j4.4
4.4 - j3.3
1.30
4.5 - j3.3
3.0 - j2.8
1.40
4.5 - j2.3
2.3 - j1.8
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CES
Collector-Emitter Breakdown
I
C
= 50 mA
70
-
V
I
CES
Collector-Emitter Breakdown
V
CE
= 40 V
-
5.5
mA
R
TH(JC)
Thermal Resistance
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
-
0.50
C/W
P
O
Output Power
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
110
-
W
G
P
Power Gain
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
7.4
-
dB
Collector Efficiency
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
50
-
%
R
L
Input Return Loss
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
9
-
dB
VSWR-T
Load Mismatch Tolerance
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
-
3:1
-
VSWR-S
Load Mismatch Stability
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
-
1.5:1
-
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM's PH1214-110M is a silicon bipolar NPN power
transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars
such as air traffic control and long-range weather radars. De-
signed for common-base, class C, broadband pulsed power
applications, the PH1214-110M can produce 110 watts of output
power with medium pulse length (150S) at 10 percent duty
cycle. The transistor is housed in a 2-lead rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. Diffused emitter ballast resis-
tors and gold metalization assure ruggedness and long-term
reliability.
Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150
s Pulse, 10% Duty
PH1214-110M
M/A-COM Division of AMP Incorporated
3
North America: Tel. (800) 366-2266, Fax (800) 618-8883
3
Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
3
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Test Fixture Electrical Schematic
1
Top View
Electrical Schematic Parts List
Note:
1. Dimensions are in mils.
C1, C2
100 pF ATC size A
C3
50 uF 50 Volts
Q1
PH1214-110M
Board Type
Rogers 6010.5 .025" Thick, E
R
= 10.5
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ZIP