Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150 S Pulse, 10% Duty
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
PH1214-300M
Outline Drawing
12/06/01
Electrical Characteristics @ 25 C
Parameter
Symbol
Min.
Max.
Units
Test Conditions
Collector-Emitter Breakdown
Voltage
BV
CES
90
-
V
I
C
=80 mA
Collector-Emitter Leakage
Current
I
CES
-
10
mA
V
CE
=40 V
Thermal Resistance
R
TH(JC)
-
.25
C/W V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Output Power
P
O
300
-
W
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Power Gain
G
P
8.75
-
dB
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Collector Efficiency
50
-
%
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Input Return Loss
RL
10
-
dB
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Tolerance
VSWR-T
-
2:1
-
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Rev. 0
Absolute Maximum Ratings @ 25 C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
90
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
21.0
A
Total Power Dissipation
@ +45 C
P
TOT
620
W
Storage Temperature
T
STG
-65 to +200
C
Junction Temperature
T
j
200
C
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150
S Pulse, 10% Duty
PH1214-300M
12/06/01
Rev. 0
Sample Test Data
(Broadband test fixture matched to 50
.)
2
Freq.
(GHz)
Pin
(W)
Pout
(W)
Gain
(dB)
Gain
(dB)
Eff.
(%)
Ic (A)
Droop
(dB)
P1dB Overdrive
VSWR-S
Pout
(W)
Po
(dB)
Gain
(dB)
Droop
(dB)
Eff.
(%)
1.5:1
2:1
2.5:1
1.2
40
406
10.06
0.82
63.2
16.1
0.1
18
451
0.46
9.52
0.38
59.8
S
S
S
1.3
40
355
9.48
59.3
15
0.04
15
412
0.65
9.12
0.32
58.2
S
S
S
1.4
40
335.8
9.24
58.4
14.4
0.06
16
378
0.51
8.75
0.35
56
S
S
S
RL
(dB)
Note:
Po(dB) is the difference between Pout at 1dB overdrive and Pout at Pin = 40W.
PH1214-300M Pout vs. Pin
0
100
200
300
400
500
0
10
20
30
40
50
60
Pin (W)
Pout (W)
1.2 GHz
1.3 GHz
1.4 GHz
Power Output Curves
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150
S Pulse, 10% Duty
PH1214-300M
12/06/01
Rev. 0
3
Test Fixture Impedances
Test Fixture Circuit Dimensions
Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150
S Pulse, 10% Duty
PH1214-300M
12/06/01
Rev. 0
Specifications subject to change without notice.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
4
Test Fixture Assembly
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