Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metallization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches .005" (millimeters 0.13mm)
Electrical Specifications at 25C
=
=
=
=
Absolute Maximum Rating at 25C
Description
M/A-COM's PH2729-150M is a silicon bipolar NPN transistor
specifically designed for use in high efficiency, common base,
Class C microwave power amplifiers. It is ideally suited for S-
Band radar and pulsed power applications where the highest
gain and saturated power are required. The flanged ceramic
package provides for excellent thermal and hermetic properties,
which when combined with M/A-COM's mature transistor fab-
rication technology results in the highest reliability available.
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
65
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
15.0
A
Power Dissipation
P
D
500
W
Storage Temperature
T
STG
-65 to +200
C
Junction Temperature
T
J
200
C
Symbol
Parameter
Test Conditions
Min
Max
Units
BV
CES
Collector-Emitter Breakdown Voltage
I
C
= 40 mA
65
-
V
I
CES
Collector-Emitter Leakage Current
V
CE
= 38 V
-
7.5
mA
RTH
(JC)
Thermal Resistance
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
-
0.4
C/W
P
OUT
Output Power
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
150
-
W
G
P
Power Gain
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
8.3
-
dB
Collector Efficiency
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
38
-
%
RL
Input Return Loss
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
10
-
dB
OD-S
Overdrive Stability (Osc.)
V
CC
= 38 V, P
IN
= 27.5 W, f = 2.7, 2.8, 2.9 GHz
-
60
dBc
VSWR-T
Load Mismatch Tolerance
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
-
2:1
-
VSWR-S
Load Mismatch Stability
V
CC
= 38 V, P
IN
= 22 W, f = 2.7, 2.8, 2.9 GHz
-
1.5:1
-
Radar Pulsed Power Transistor--150 Watts
2.7-2.9 GHz, 100s Pulse, 10% Duty
PH2729-150M
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 2.0
1
50
70
90
110
130
150
170
190
210
10
12
14
16
18
20
22
24
26
28
30
Power Input (Wpk)
P
o
w
e
r Output (W
pk)
2.7 GHz
2.8 GHz
2.9 GHz
7
7.5
8
8.5
9
9.5
10
2.65
2.7
2.75
2.8
2.85
2.9
2.95
Frequency (GHz)
P
o
wer Gai
n
(dB
)
30
32
34
36
38
40
42
44
46
48
50
Collector Efficiency (%)
Power Gain (dB)
Nc (%)
Test Fixture Matching Circuit Dimensions
Typical Performance Curves
Typical Power Transfer vs. Frequency
Typical Power Gain and Collector
Efficiency
Circuit Dimensions
1
Assembly View
1. PCB Material Rogers 6010.5 .025" Thk.
TEST FIXTURE
INPUT
CIRCUIT
Z IF
TEST FIXTURE
OUTPUT
CIRCUIT
Z OF
50
50
F (GHz)
Z
IF
(
)
Z
OF
(
)
2.70
4.8 j6.9
1.7 j3.2
2.80
4.8 j6.6
1.7 j2.8
2.90
4.8 j6.4
1.7 j2.4
Broadband Test Fixture Impedance
Radar Pulsed Power Transistor--150 Watts, 2.7-2.9 GHz, 100s Pulse, 10% Duty
PH2729-150M
North America: Tel. (800) 366-2266, Fax (800) 618-8883
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 2.0
2
PDF 
ZIP