M/A-COM PHI, INC.
PH2729-25M
RADAR PULSED POWER TRANSISTOR
25 WATTS, 2.70-2.90 GHz, 100
s PULSE, 10% DUTY
FEATURES
OUTLINE DRAWING
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
ABSOLUTE MAXIMUM RATINGS AT 25C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
VCES 65 V
Emitter-Base Voltage
VEBO
3.0 V
Collector Current (Peak)
IC
4.0 A
Total Power Dissipation
@ +25C
PTOT
120 W
Storage Temperature
TSTG
-65 to +200
C
Junction Temperature
Tj
200 C
ELECTRICAL CHARACTERISTICS AT 25C
Parameter
Symbol
Min
Max
Units
Test Conditions
Collector-Emitter Breakdown
Voltage
BVCES
65
-
V
IC=10mA
Collector-Emitter Leakage
Current
ICES - 1.5 mA
VCE=40V
Thermal Resistance
RTH(JC)
- 1.25 C/W
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Output Power
PO
25 - W
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Power Gain
GP 9.2 - dB
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Collector Efficiency
45 - %
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Input Return Loss
RL
6
-
dB
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Load Mismatch Tolerance
VSWR-T
-
3:1
-
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
VCC=36 V, Pin=3.0 W, F=2.7, 2.8, 2.9 GHz
BROADBAND TEST FIXTURE IMPEDANCE
F (GHz)
Z IF ()
Z OF ()
2.70
38 - j14.4
17.1 - j8.7
2.80
35 - j16.3
15.0 - j8.7
2.90
33 - j17.8
13.3 - j8.3
M/A-COM POWER HYBRIDS OPERATION
1742 CRENSHAW BLVD
TORRANCE, CA 90501
(310) 320-6160
FAX (310) 618-9191
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
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