UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES
OUTLINE DRAWING
N-Channel Enhancement Mode Device
Applications
150 Watts CW
Common Source Gemini Configuration
RESFET Structure
Internal Input Impedance Matching
Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25C
Parameter
Symbol
Rating
Units
Drain-Source Voltage
VDS 60 V
Gate-Source Voltage
VGS 20 V
Drain-Source Current
IDS 28 A
Dissipation @25C
PD 233 W
Storage Temperature
Tstg
-55 to +150
C
Junction Temperature
Tj
200
C
Thermal Resistance
jc
0.75 C/W
ELECTRICAL CHARACTERISTICS AT 25C (*per side)
Parameter
Symbol
Min
Max
Units
Test Conditions
Drain-Source Breakdown
Voltage
BVDSS 60 -
V
ID=40 mA, VGS=0.0 V*
Drain-Source Leakage
Current
IDSS - 4.0 mA
VDS=28.0 V, VGS=0.0 V*
Gate-Source Leakage
Current
IGSS - 2.0 A
VGS=20 V, VDS=0.0 V*
Gate Threshold Voltage
VGS(th) 2.0 6.0 V VDS=10.0 V, IDS=200 mA*
Forward Transconductance
Gm 1.0 - S
VDS=10.0 V, IDS=2000 mA (pulsed)*
Input Capacitance
CISS 200 pF
VDS=28.0 V, f=1.0 MHz (Reference Only)*
Reverse Capacitance
CRSS 50 pF
VDS=28.0 V, f=1.0 MHz*
Output Capacitance
COSS 14 pF
VDS=28.0 V, f=1.0 MHz*
Power Gain
GP 10 - dB
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
Collector Efficiency
50 - %
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
Load Mismatch Tolerance
VSWR
-
3.0:1
-
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz)
Z in ()
Z load ()
935
4.6 + j8.0
2.3 + j3.1
960
4.7 + j7.8
2.4 + j3.1
M/A-COM POWER TRANSISTORS
1742 CRENSHAW BLVD
TORRANCE, CA 90501
(310) 320-6160
FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J
Output Power vs Input Power
Output Power vs Drain Voltage
Power Input (W)
0
10
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
960 MHz
935 MHz
Vds = 26 V Idq = .40 A
Power Output (W)
Drain Voltage (V)
0
10
20
30
40
50
60
70
80
90
100
19
21
23
25
27
29
Frequency = 960 MHz Idq = .40 A Pin = 8.0 W
Power Output (W)
Gain vs. Frequency
Efficiency vs. Frequency
Frequency (MHz)
9
9.5
10
10.5
11
11.5
12
932
936
940
944
948
952
956
960
964
Gain (dB)
Frequency (MHz)
30
35
40
45
50
55
60
65
70
932
936
940
944
948
952
956
960
964
Vds = 26 V Idq = .40 A Po = 80 W
Efficiency (%)
Gain vs. Temperature
Capacitance vs. Voltage
Case Temperature (C)
8
9
10
11
12
13
20
40
60
80
100
120
Vds = 26 V Idq = .40 A Po = 80 W F = 960 MHz
Gain (dB)
Drain Voltage (V)
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
Crss
Coss
F = 1 MHz
M/A-COM POWER TRANSISTORS
1742 CRENSHAW BLVD
TORRANCE, CA 90501
(310) 320-6160
FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
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