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Электронный компонент: MTD2001M

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Photo Diode
MTD2001M
Features
High Reliability
Low Dark Current
Compact Package
Applications
Optical Switches
Optical Sensors
Optical Detectors
Maximum Ratings (Ta=25
o
C)
Characteristic
Symbol
Max.
Test Condition Unit
Reverse Voltage
V
R
20
-
V
Power Dissipation
P
D
70.00
-
mW
Operating
Temperature
T
opr
-20~+85
-
o
C
Storage Temperature
T
stg
-30 ~+100
-
o
C
Junction Temperature
T
j
100
-
o
C
Soldering Temperature
T
sol
260
for 5 sec. max
o
C
Opto-Electrical Characteristics (Ta=25
o
C)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Open Circuit Voltage
V
OC
Ee=5mW/cm
2
.35
-
-
V
Light Current
I
L
Vr=10V, Ee=5mW/cm
2
-
20.00
-
A
Dark Current
I
D
Vr=10V
-
-
5
nA
Spectral Sensitivity
-
-
400 ~ 1100
-
A
Peak Sensitivity Wavelength
p
-
-
950
-
V
Beam Angle
-
-
65
o
-
deg.
Junction Capacitance
C
j
1 MHz, V=0V
-
80
-
pF
Company Headquarters
3 Northway Lane North
Latham, New York 12110
Toll Free: 800.984.5337
Fax: 518.
785.4725
* Color Temerature = 2870K Standard Tungsten Lamp
Web: www.marktechopto.com | Email: info@marktechopto.com
West Coast Sales Office
950 South Coast Drive, Suite 265
Costa Mesa, California 92626
Toll Free: 800.984.5337
Fax:
714.850.9314
Photo Diode
MTD2001M Graphs
Company Headquarters
3 Northway Lane North
Latham, New York 12110
Toll Free: 800.984.5337
Fax: 518.
785.4725
Web: www.marktechopto.com | Email: info@marktechopto.com
West Coast Sales Office
950 South Coast Drive, Suite 265
Costa Mesa, California 92626
Toll Free: 800.984.5337
Fax:
714.850.9314