SCOPE: MONOLITHIC CMOS, ANALOG MULTIPLEXER
Device Type Generic Number SMD Number
01
DG508AA(x)/883B 7705201
Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:
Outline Letter Mil-Std-1835 Case Outline Package Code
MAXIM SMD
K E
GDIP1-T16 or CDIP2-T16 16 LEAD CERDIP J16
L X CDFP4-16 16 LEAD FLATPACK F16
P E GDIP1-T16 or CDIP2-T16 16 LEAD Sidebraze P16
Z 2 CQCC1-N20 20-Pin Ceramic LCC L20
Absolute Maximum Ratings
Voltage Referenced to V
-
V
+
to V
-
.............................................................................................................................. 44V
V
+
to GND ........................................................................................................................ +22V
V
-
to GND .......................................................................................................................... -22V
Digital Inputs, VS or VD 1/.......................................................................... (V
-
) -3.0V to (V
+
)
Analog Inputs Voltage ........................................................................... (V
-
) -2.0V to (V
+
)+2V
Analog Input, Overvoltage Range ............................................................... (V
-
) -3.0V to (V
+
)
Lead Temperature (soldering, 10 seconds) ............................................................................ +300
C
Storage Temperature .............................................................................................. -65
C to +150
C
Continuous Power Dissipation ............................................................................. T
A
=
+
70
C
16 lead FLATPACK (derate 6.1mW/
C above +70
C) ............................................. 485mW
16 lead CERDIP(derate 10.0mW/
C above +70
C) .................................................. 800mW
16 lead Side Braze(derate 10.5mW/
C above +70
C) ............................................... 842mW
20 lead LCC (derate 9.1mW/
C above +70
C) ......................................................... 727mW
Junction Temperature T
J
.......................................................................................... +150
C
Thermal Resistance, Junction to Case,
JC:
Case Outline 16 lead FLATPACK ............................................................ 65
C/W
Case Outline 16 lead CERDIP................................................................... 50
C/W
Case Outline 16 lead Side Braze................................................................ 45
C/W
Case Outline 20 lead LCC ........................................................................ 20
C/W
Thermal Resistance, Junction to Ambient,
JA:
Case Outline 16 lead FLATPACK ........................................................... 165
C/W
Case Outline 16 lead CERDIP.................................................................. 100
C/W
Case Outline 16 lead Side Braze................................................................. 95
C/W
Case Outline 20 lead LCC ....................................................................... 110
C/W
Recommended Operating Conditions.
Ambient Operating Range (T
A
) ............................................................... -55
C to
+
125
C
NOTE 1: Signals on S, D, IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current
to maximum current ratings.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
----------------------------
Electrical Characteristics of DG508A/883B
19-0339
Rev. B
for SMD 7705201
Page 2 of
6
TABLE 1. ELECTRICAL TESTS
TEST
Symbol
CONDITIONS
-55
C <=T
A
<= +125
C
V+=+15V, V-=-15V, GND=0V
V
AH
=2.4V, V
AL
=0.8V, V
EN
=4.5V
Unless otherwise specified
Group A
Subgroup
Device
type
Limits
Min
Limits
Max
Units
SWITCH
Input Leakage
Current 2/
I
IH
Measure inputs sequentially,
connect all unused inputs to GND
1,2,3
All
0.8
A
Input Leakage
Current 2/
I
IL
Measure inputs sequentially,
connect all unused inputs to 5.0V
1,2,3
All
-0.8
A
Switch ON
Resistance
r
DS(ON1)
I
D
=
1mA, V
S
=
10V
1,3
2
All
400
500
Switch ON
Resistance
r
DS(ON2)
V+=+10V, V-=
10V, I
D
=
1mA,
V
S
=
7.5V
1,2,3
All
1000
Source-OFF
Leakage Current
I
S(OFF)
V
S
=+/-10V, V
EN
=0.8V, All unused
inputs=
10V
1,2,3
All
-50
50 nA
Drain-OFF
Leakage Current
I
D(OFF)
V
D
=
10V, V
EN
=0.8V, All unused
inputs=
10V
1,2,3
All
-250
250 nA
Drain-ON Leakage
Current
I
D(ON)
V
S
=+/-10V, V
D
=-/+10V, All
unused inputs=
10V
1,2,3
All
-250
250 nA
INPUT
Standby Positive
Supply Current
+I
SBY
V
A
=0V, V
EN
=0V
1,2,3
All
3.5 mA
Standby Negative
Supply Current
-I
SBY
V
A
=0V, V
EN
=0V
1,2,3
All
-3.5
mA
SUPPLY
Positive Supply
Current
I+
V
EN
=5V, V
A
=0V
1,2,3
All
12 mA
Negative Supply
Current
I+
V
EN
=5V, V
A
=0V
1,2,3
All
-12
mA
DYNAMIC
Capacitance:
Address
C
A
V
+
=V
-
=0V, f=1MHz, NOTE 3
4
All
10 pF
Capacitance:
Output Switch
C
OS
V
+
=V
-
=0V, f=1MHz, NOTE 3
4
All
45 pF
Capacitance: Input
Switch
C
IS
V
+
=V
-
=0V, f=1MHz, NOTE 3
4
All
10 pF
Charge Transfer
Error
V
CTE
V
S
=GND, V
GEN
=0V to 5V,
f=500kHz, CL=100pF NOTE 3
4
All
10 mV
Single Channel
Isolation
V
ISO
V
GEN
=1Vp-p, f=200kHz
NOTE 3
4
All
50
dB
Crosstalk Between
Channels
V
CT
V
GEN
=1Vp-p, f=200kHz
NOTE 3
4
All
50
dB
Break Before
Make Time Delay
t
D
Figure 3
9
All
5.0
ns
Propagation Delay:
Address Inputs to
I/O Channels
t
ON(A)
t
OFF(A)
Figure 1,2, R
L
=1k
, CL=100pF
9,11
10
All
1000
1500
ns
Enable to I/O
t
ON(EN)
t
OFF(EN)
Figure1,2, R
L
=1k
, CL=100pF
9,11
10
All
1000
1500
ns
----------------------------
Electrical Characteristics of DG508A/883B
19-0339
Rev. B
for SMD 7705201
Page 3 of
6
QUALITY ASSURANCE
Sampling and inspection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in Mil-
Std-883.
Screening shall be in accordance with Method 5004 of Mil-Std-883. Burn-in test Method 1015:
1. Test Condition, A, B, C, or D.
2. TA = +125
C minimum.
3. Interim and final electrical test requirements shall be specified in Table 2.
Quality conformance inspection shall be in accordance with Method 5005 of Mil-Std-883, including Groups A, B,
C, and D inspection.
Group A inspection:
1. Tests as specified in Table 2.
2. Selected subgroups in Table 1, Method 5005 of Mil-Std-883 shall be omitted.
Group C and D inspections:
a. End-point electrical parameters shall be specified in Table 1.
b. Steady-state life test, Method 1005 of Mil-Std-883:
1. Test condition A, B, C, D.
2. TA = +125
C, minimum.
3. Test duration, 1000 hours, except as permitted by Method 1005 of Mil-Std-883.
TABLE 2. ELECTRICAL TEST REQUIREMENTS
Mil-Std-883 Test Requirements
Subgroups
per Method 5005, Table 1
Interim Electric Parameters
Method 5004
1
Final Electrical Parameters
Method 5005
1*, 2, 3, 4**
Group A Test Requirements
Method 5005
1, 2, 3, 4**, 9, 10, 11***
Group C and D End-Point Electrical Parameters
Method 5005
1
* PDA applies to Subgroup 1 only.
** Subgroup 4 (capacitance measurements) shall be measured only for the initial test and
after process or design changes which may affect capacitance.
*** Subgroups 10 and 11, if not tested, shall be guaranteed to the specified limits in Table 1.
----------------------------
Electrical Characteristics of DG508A/883B
19-0339
Rev. B
for SMD 7705201
Page 5 of
6
PDF 
ZIP