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Электронный компонент: HUL7254

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Hologram Unit
1
Publication date: October 2001
SHH00003AED
HUL7254
Hologram unit for CD/CD-ROM drive
For optical information processing
I Features
Semiconductor laser and photodetector are
integrated through using micro-mirror.
Focus error signal detection: SSD method
Tracking error signal detection: 3-beam method
Low-power semiconductor laser included
Built-in I-V conversion amplifier
I Applications
CD-ROM drive (slim type)
I Absolute Maximum Ratings
Note) *: Recommended supply voltage is 4.5 V to 5.5 V.
Note) 1. Standard corner R
= 0.20 max.
2. Thickness of plate : Ni 1
m min. + Au 0.1 m min.
3. Thickness of hologram = 2.3 mm, n = 1.519
4. Apparent emitting point in figure is designed without
consideration of optical pass in HOE.
0.25 (Lead fr
ame)
6.8
+0
-0.05
9.8
6.8
0.2
3.3
0.2
0.7
4
=
2.8
X
Y
O
Apparent emitting point
Apparent emitting point
Hall mark for No.1 pin on reverse side
Reference plane
Reference plane
3.2
0.2
3.3
0.2
4.33
0.4
2.55
0.2
2.55
0.2
3.0
0.4
6.70.2
7
7
3
0.50
0.2
0.78
0.2
(at the shoulder)
1.33
0.2
Reference plane
5
4
3
2
1
6
7
8
9
10
SEC. X-O-Y
SEC. X-O-Y
Unit: mm
Parameter
Symbol
Rating
Unit
Laser beam output
P
O
3.6
mW
Laser reverse voltage
V
R(LD)
2
V
Supply voltage
*
V
CC
6
V
Reference voltage
V
C
+1.3 to V
CC
- 1.3
V
Operating ambient temperature
T
opr
-10 to +60
C
Storage temperature
T
stg
-40 to +85
C
I Block Diagram
1
10
2
4
5
9
7
P3
Band GAP
P2
Pmon
LD
8
6
P7
P4
3
P9
P8
P5
P1
P10
P6
HUL7254
2
SHH00003AED
I Pin Descriptions
Pin No.
Description
1
Mon. out
2
(P2
+ P4 + P8) out
3
V
C
4
(P1
+ P6) out
5
GND
Pin No.
Description
6
(P5
+ P10) out
7
V
CC
8
(P3
+ P7 + P9) out
9
LD(
+)
10
GND
I Electro-Optical Characteristics
Unit characteristic specifications T
C
= 25C 3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Threshold current
I
th
CW
15
30
40
mA
Operating current
I
OP
CW, V
RF
= 570 mV, V
CC
= 5 V
20
35
48
mA
Operating voltage
V
OP
CW, V
RF
= 570 mV, V
CC
= 5 V
1.9
2.4
V
LD power intensity out of
P
OP
V
RF
= 570 mV, V
CC
= 5 V
0.18
0.30
mW
objective lens
Focus error signal amplitude
V
FE
V
RF
= 570 mV, V
CC
= 5 V
340
480
620
mV
Tracking error signal amplitude
V
TE
V
RF
= 570 mV, V
CC
= 5 V
150
300
450
mV
Focus error signal defocus
D
FO
V
RF
= 570 mV, V
CC
= 5 V
-8
+8
%
Tracking error signal offset
B
TE
V
RF
= 570 mV, V
CC
= 5 V
-30
+30
%
Jitter
Jitter
V
RF
= 570 mV, V
CC
= 5 V
6
ns
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
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Consult our sales staff in advance for information on the following applications:
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notice for reasons of modification and/or improvement. At the final stage of your design, purchas-
ing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage and heat radiation characteristics. Other-
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2001 MAR