1
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e
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All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
512Kb (32K x 16-bit)
27C1512T
2005 Maxwell Technologies
All rights reserved.
OTP EPROM MCM
01.06.05 REV 4
F
EATURES
:
32K x 16 Bit OTP EPROM organization
R
AD
-P
AK
radiation-hardened against natural space radia-
tion
Total dose hardness:
- > 100 Krad (Si), depending upon space mission
Excellent Single Event Effects:
- SEL
TH
LET: > 80 MeV/mg/cm
2
- SEU
TH
LET: > 80 Mev/mg/cm
2
Package:
- 40 pin R
AD
-P
AK
DIP
Low power consumption:
- Active mode: 500 mW @ 10 MHz
- Standby mode: < 11 mW
High speed page and word programming:
- Page programming time: 14 sec (typ)
Programming power supply:
- V
PP
= 12.5 V 0.3 V
One-time Programmable
Pin Arrangement
- Flash memory and mask ROM compatible
D
ESCRIPTION
:
Maxwell Technologies' 27C1512T high density 512K OneTime
Programmable Electrically Programmable Read Only Memory
multi-chip module (MCM) features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
27C1512T features fast address times and low power dissipa-
tion. The 27C1512T offers high speed programming using
page programming mode.
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies self-defined Class
K.
Logic Diagram
M
e
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2
All data sheets are subject to change without notice
2005 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
27C1512T
01.06.05 REV 4
T
ABLE
1. 27C1512T P
INOUT
D
ESCRIPTION
P
IN
S
YMBOL
D
ESCRIPTION
21-29, 31-36
A0 - A14
Address
19-12, 10-3
I/O0 - I/O15
Input/Output
2
CE
Chip Enable
20
OE
Output Enable
40
V
CC
Power Supply
1
V
PP
Programming Supply
11, 30
V
SS
Ground
39
PGM
Programming Enable
37, 38
NC
No Connection
T
ABLE
2. 27C1512T A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Supply Voltage
1
1. Relative to V
SS
.
V
CC
-0.6
7.0
V
Programming Voltage
1
V
PP
-0.6
13.5
V
All Input and Output Voltage
1,2
2. V
IN
, V
OUT
, and V
ID
min = -1.0V for pulse width < 20 ns.
V
IN
, V
OUT
-0.6
7.0
V
A9 Voltage
2
V
ID
-0.6
13.0
V
Weight
14.5
Grams
Thermal Impedance
JC
--
1.23
C/W
Operating Temperature Range
T
OPR
-55
+125
C
Storage Temperature Range
T
STG
-65
+150
C
T
ABLE
3. 27C1512T R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NITS
Supply Voltage
V
CC
4.5
5.5
V
Input Voltage
V
IL
V
IH
-0.3
2.2
0.8
V
CC
+0.3
V
Operating Temperature Range
T
OPR
-55
+125
C
M
e
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o
r
y
3
All data sheets are subject to change without notice
2005 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
27C1512T
01.06.05 REV 4
T
ABLE
4. 27C1512T C
APACITANCE
1,2, 3
1. V
IN
= V
OUT
= 0V.
2. T
A
= 25
o
C, f = 1 MHz.
3. Guaranteed by design.
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Input Capacitance
C
IN
--
10
pF
Output Capacitance
C
OUT
--
15
pF
T
ABLE
5. 27C1512T M
ODE
S
ELECTION
1,2
1. X = Don't care.
2. 11.5V < V
H
< 12.5V.
M
ODE
V
PP
V
CC
CE
OE
PGM
A
9
I/O
R
EAD
V
CC
V
CC
V
IL
V
IL
V
IH
X
D
OUT
O
UTPUT
D
ISABLE
V
CC
V
CC
V
IL
V
IH
V
IH
X
High-Z
S
TANDBY
V
CC
V
CC
V
IH
X
X
X
High-Z
P
ROGRAM
V
PP
V
CC
V
IL
V
IH
V
IL
X
D
IN
P
ROGRAM
V
ERIFY
V
PP
V
CC
V
IL
V
IL
V
IH
X
D
OUT
P
AGE
D
ATA
L
ATCH
V
PP
V
CC
V
IH
V
IL
V
IH
X
D
IN
P
AGE
P
ROGRAM
V
PP
V
CC
V
IH
V
IH
V
IL
X
High-Z
P
ROGRAM
I
NHIBIT
V
CC
V
CC
V
IL
V
IL
V
IL
X
High-Z
V
PP
V
CC
V
IL
V
IH
V
IH
X
High-Z
V
PP
V
CC
V
IH
V
IL
V
IL
X
High-Z
V
PP
V
CC
V
IH
V
IH
V
IH
X
High-Z
I
DENTIFIER
V
CC
V
CC
V
IL
V
IL
V
IH
V
H
2
ID
M
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4
All data sheets are subject to change without notice
2005 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
27C1512T
01.06.05 REV 4
T
ABLE
6. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS
FOR
R
EAD
O
PERATION
(V
CC
= 5V 10%, V
PP
= V
SS
, T
A
= -55
TO
+125
C,
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
T
EST
C
ONDITION
S
YMBOL
S
UBGROUPS
M
IN
T
YP
M
AX
U
NIT
Input Leakage Current
V
IN
= 5.5V
V
IN
@ 0V
I
LI
I
LI
1, 2, 3
--
4
--
--
2
--
A
A
Output Leakage Current
High
Low
V
OUT
= 5.5V
V
OUT
= 0.45V
I
OH
I
OL
1, 2, 3
--
-4.0
--
4
--
A
Standby V
CC
Current
CE = V
IH
I
SB
1, 2, 3
--
--
2
mA
Operating V
CC
Current
I
OUT
= 0 mA, CE = V
IL
I
OUT
= 0 mA, f = 5 MHz
I
OUT
= 0 mA, f = 10 MHz
I
CC1
I
CC2
I
CC3
1, 2, 3
--
--
--
60
60
100
--
--
--
mA
V
PP
Current
V
PP
= 5.5V
I
PP1
--
1
40
A
Input Voltage
V
IH1
V
IL1
1, 2, 3
2.2
--
--
--
--
0.8
V
Output Voltage
I
OH
= -800 A
I
OL
= 4.2 mA
V
OH
V
OL
1, 2, 3
2.4
--
--
--
--
0.45
V
T
ABLE
7. 27C1512T AC E
LECTRICAL
C
HARACTERISTICS
FOR
R
EAD
O
PERATION
1
(V
CC
= 5V + 10%, V
PP
= V
SS
, T
A
= -55
TO
+125
C,
UNLESS
OTHERWISE
SPECIFIED
)
1. Test conditions:
- Input pulse levels
0.45V/2.4V
- Input rise and fall times
< 10 ns
- Output load
1 TTL gate + 100pF (including scope and jig)
- Referenced levels for measuring timing0.8V/2.0V
P
ARAMETER
T
EST
C
ONDITION
S
YMBOL
S
UBGOUPS
M
IN
M
AX
U
NIT
Address Access Time
CE = OE = V
IL
t
ACC
9, 10, 11
--
200
ns
Chip Enable Access Time
OE = V
IL
t
CE
9, 10, 11
--
200
ns
Output Enable Access TIme
CE = V
IL
t
OE
9, 10, 11
--
70
ns
Output Hold to Address Change
CE = OE = V
IL
t
OH
9, 10, 11
0
--
ns
Output Disable to High-Z
2
2. t
DF
is defined as the time at which the output becomes an open circuit and data is no longer driven.
CE = V
IL
t
DF
9, 10, 11
0
50
ns
T
ABLE
8. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS
FOR
P
ROGRAMMING
O
PERATIONS
1,2,3,4
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= 25
C +5
C)
P
ARAMETER
T
EST
C
ONDITION
S
YMBOL
S
UBGROUP
M
IN
M
AX
U
NIT
Input Leakage Current
V
IN
= 0V to V
CC
I
LI
1
--
2
A
M
e
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5
All data sheets are subject to change without notice
2005 Maxwell Technologies.
All rights reserved.
512Kb (32K x 16-bit) - OTP EPROM MCM
27C1512T
01.06.05 REV 4
Operating V
CC
Current
I
CC
1
--
30
mA
Operating V
PP
Current
CE = PGM = V
IL
I
PP
1
--
80
mA
Input Voltage
5
V
IH
1
2.2
--
V
V
IL
1
--
0.8
Output Voltage
I
OH
= -400 A
V
OH
1
2.4
--
V
I
OH
= 2.1 mA
V
OL
1
--
0.45
1. V
CC
must be applied before V
PP
and removed after V
PP
.
2. V
PP
must not exceed 13V, including overshoot.
3. Do not change V
PP
from V
IL
to 12.5V or 12.5V to V
IL
when CE = low.
4. DC electrical parameters for programming operations are not tested. These parameters are guaranteed by design.
5. Device reliability may be adversely be affected if the device is installed or removed while V
PP
= 12.5V.
T
ABLE
9. 27C1512T AC E
LECTRICAL
C
HARACTERISTICS
FOR
P
ROGRAMMING
O
PERATIONS
1,2
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= -55
TO
+125
C)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
Address Setup Time
t
AS
9, 10, 11
2
--
s
Address Hold Time
t
AH
9, 10, 11
0
--
s
Data Setup Time
t
DS
9, 10, 11
2
--
s
Data Hold Time
t
DH
9, 10, 11
2
--
s
Chip Enable Setup TIme
t
CES
9, 10, 11
2
--
s
V
PP
Setup Time
t
VPS
9, 10, 11
2
--
s
V
CC
Setup Time
t
VCS
9, 10, 11
2
--
s
Output Enable Setup Time
t
OES
9, 10, 11
2
--
s
Output Disable Time
t
DF
3
9, 10, 11
0
130
ns
PGM Initial Programming Pulse Width
t
PW
9, 10, 11
0.19
0.21
ms
PGM Overprogramming Pulse Width
t
OPW
9, 10, 11
0.19
5.25
ms
Data Valid from Output Enable Time
t
OE
9, 10, 11
0
150
ns
Output Enable Pulse During Data Latch
t
LW
9, 10, 11
1
--
s
Output Enable Hold Time
t
OEH
9, 10, 11
2
--
s
Chip Enable Hold Time
t
CEH
9, 10, 11
2
--
s
PGM Setup TIme
t
PGMS
9, 10, 11
2
--
s
T
ABLE
8. 27C1512T DC E
LECTRICAL
C
HARACTERISTICS
FOR
P
ROGRAMMING
O
PERATIONS
1,2,3,4
(V
CC
= 6.25V + 0.25V, V
PP
= 12.5V + 0.3V, T
A
= 25
C +5
C)
P
ARAMETER
T
EST
C
ONDITION
S
YMBOL
S
UBGROUP
M
IN
M
AX
U
NIT
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