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All data sheets are subject to change without notice
(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
3.3V 1 Megabit (128K x 8-Bit)
28LV010
2001 Maxwell Technologies
All rights reserved.
EEPROM
03.14.03 REV 6
F
EATURES
:
3.3V low voltage operation 128K x 8 Bit EEPROM
R
AD
-P
AK
radiation-hardened against natural space
radiation
Total dose hardness:
- > 100 krad (Si), depending upon space mission
Excellent Single Event Effects:
- SEL
TH
> 84 MeV/mg/cm
2
- SEU
TH
> 37 Mev/mg/cm
2
(read mode)
- SEU saturated cross section = 3E-6 cm
2
(read mode)
- SEU
TH
= 11.4 Mev/mg/cm
2
(write mode)
- SEU saturated cross section = 5E-3 cm
2
(write mode)
with hard errors
Package:
- 32 Pin R
AD
-P
AK
flat pack
- 32 Pin R
AD
-P
AK
DIP
- JEDEC-approved byte-wide pinout
Address Access Time:
- 200, 250 ns maximum access times available
High endurance:
- 10,000 erase/write (in Page Mode), 10-year data
retention
Page write mode:
- 1 to 128 bytes
Automatic programming
- 10 ms automatic page/byte write
Low power dissipation
- 20 mW/MHz active current (typ.)
- 72 W standby (maximum)
D
ESCRIPTION
:
Maxwell Technologies' 28LV010 high density, 3.3V, 1 Megabit
EEPROM microcircuit features a greater than 100 krad (Si)
total dose tolerance, depending upon space mission. The
28LV010 is capable of in-system electrical Byte and Page pro-
grammability. It has a 128-Byte Page Programming function to
make its erase and write operations faster. It also features
Data Polling and a Ready/Busy signal to indicate the comple-
tion of erase and programming operations. In the 28LV010,
hardware data protection is provided with the RES pin, in addi-
tion to noise protection on the WE signal and write inhibit on
power on and off. Meanwhile, software data protection is
implemented using the JEDEC-optional Standard algorithm.
The 28LV010 is designed for high reliability in the most
demanding space applications.
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
High Voltage
Generator
Control Logic Timing
Address
Buffer and
Latch
Y Decoder
X Decoder
Y Gating
Memory Array
I/O Buffer and
Input Latch
Data Latch
V
CC
V
SS
RES
OE
CE
WE
RES
A0
A6
A7
A16
I/O0
I/O7
RDY/Busy
Logic Diagram
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All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
03.14.03 REV 6
T
ABLE
1. 28LV010 P
INOUT
D
ESCRIPTION
P
IN
S
YMBOL
D
ESCRIPTION
12-5, 27, 26, 23, 25,
4, 28, 3, 31, 2
A0-A16
Address
13-15, 17-21
I/O0 - I/O7
Input/Output
24
OE
Output Enable
22
CE
Chip Enable
29
WE
Write Enable
32
V
CC
Power Supply
16
V
SS
Ground
1
RDY/BUSY
Ready/Busy
30
RES
Reset
T
ABLE
2. 28LV010 A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
S
YMBOL
M
IN
T
YP
M
AX
U
NIT
Supply Voltage (Relative to Vss)
V
CC
-0.6
7.0
V
Input Voltage (Relative to Vss)
V
IN
-0.5
1
1. V
IN
min = -3.0 V for pulse width < 50 ns.
7.0
V
Package Weight
RP
7.38
Grams
RT
2.69
RD
10.97
Thermal Impedence
F
JC
2.17
C/W
Operating Temperature Range
T
OPR
-55
125
C
Storage Temperature Range
T
STG
-65
150
C
T
ABLE
3. D
ELTA
L
IMITS1
1. Parameters are measured and recorded as Deltas per
MIL-STD-883 for Class S Devices
P
ARAMETER
V
ARIATION2
2. Specified in Table 6
I
CC1
10%
I
CC2
10%
I
CC3A
10%
I
CC3B
10%
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All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
03.14.03 REV 6
T
ABLE
4. 28LV010 R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
V
CC
3.0
3.6
V
Input Voltage
RES_PIN
V
IL
V
IH
V
H
-0.3
1
2.0
2
V
CC
-0.5
1. V
IL
min = -1.0 V for pulse width < 50 ns.
2. V
IH
min = 2.2 V for V
CC
= 3.6 V.
0.8
V
CC
+0.3
V
CC
+1
V
Operating Temperature Range
T
OPR
-55
+125
C
T
ABLE
5. 28LV010 C
APACITANCE
(T
A
= 25C, F = 1MH
Z
)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Input Capacitance: V
IN
= 0V
1
1. Guaranteed by design.
C
IN
--
6
pF
Output Capacitance: V
OUT
= 0V
1
C
OUT
--
12
pF
T
ABLE
6. 28LV010 DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 3.3V 0.3, T
A
= -55
TO
+125C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
T
EST
C
ONDITIONS
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
Input Leakage Current
V
CC
= 3.6V, V
IN
= 3.6V
I
LI
1, 2, 3
--
2
1
1. I
LI
on RES = 100 uA max.
A
Output Leakage Current V
CC
= 3.6V, V
OUT
= 3.6V/0.4V
I
LO
1, 2, 3
--
2
A
Standby V
CC
Current
CE = V
CC
CE = V
IH
I
CC1
I
CC2
1, 2, 3
--
--
20
1
A
mA
Operating V
CC
Current
I
OUT
= 0mA, Duty = 100%,
Cycle = 1 s @ V
CC
= 3.3V
I
OUT
= 0mA, Duty = 100%,
Cycle = 200 ns @ V
CC
= 3.3V
I
CC3
1, 2, 3
--
--
6
15
mA
Input Voltage
V
IL
V
IH
V
H
1, 2, 3
--
2.0
2
V
CC
-0.5
2. V
IH
min = 2.2V for V
CC
= 3.6V.
0.8
--
--
V
Output Voltage
3
3. Rdy/Bsy is an open collector output.
I
OL
= 2.1 mA
I
OH
= - 0.4 mA
I
OH
= - 0.1 mA
V
OL
V
OH
V
OH
1, 2, 3
--
V
CC
x 0.8
V
CC
- 0.3
0.4
--
--
V
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All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
03.14.03 REV 6
T
ABLE
7. 28LV010 AC C
HARACTERISTICS FOR
R
EAD
O
PERATION1
(V
CC
= 3.3V 10%, T
A
= -55
TO
+125 C
UNLESS OTHERWISE SPECIFIED
)
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including
scope and jig); reference levels for measuring timing - 0.8V/1.8V.
P
ARAMETER
T
EST
C
ONDITIONS
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
Address Access Time
-200
-250
CE = OE = V
IL
, WE = V
IH
t
ACC
9, 10, 11
--
--
200
250
ns
Chip Enable Access Time
-200
-250
OE = V
IL
, WE = V
IH
t
CE
9, 10, 11
--
--
200
250
ns
Output Enable Access Time
-200
-250
CE = V
IL
, WE = V
IH
t
OE
9, 10, 11
0
0
110
120
ns
Output Hold to Address Change
-200
-250
CE = OE = V
IL
, WE = V
IH
t
OH
9, 10, 11
0
0
--
--
ns
Output Disable to High-Z
2
-200
-250
2. t
DF
and t
DFR
is defined as the time at which the output becomes an open circuit and data is no longer driven.
CE = V
IL
, WE = V
IH
t
DF
9, 10, 11
0
0
50
50
ns
Output Disable to High-Z
-200
-250
CE =OE= V
IL
, WE = V
IH
t
DFR
9, 10, 11
0
0
300
350
ns
RES to Output Delay
3
-200
-250
3. Guaranteed by design.
CE = OE = V
IL
WE = V
IH
t
RR
9, 10, 11
0
0
525
600
ns
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All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
03.14.03 REV 6
T
ABLE
8. 28LV010 AC E
LECTRICAL
C
HARACTERISTICS FOR
E
RASE AND
W
RITE
O
PERATIONS
(V
CC
= 3.3V 10%, T
A
= -55
TO
+125 C
UNLESS OTHERWISE SPECIFIED
)
P
ARAMETER
S
YMBOL
S
UBGROUPS
M
IN
M
AX
U
NIT
Address Setup Time
-200
-250
t
AS
9, 10, 11
0
0
--
--
ns
Chip Enable to Write Setup Time (WE controlled)
-200
-250
t
CS
9, 10, 11
0
0
--
--
ns
Write Pulse Width (CE controlled)
-200
-250
t
CW
9, 10, 11
200
250
--
--
ns
Write Pulse Width (WE controlled)
-200
-250
t
WP
9, 10, 11
200
250
--
--
ns
Address Hold Time
-200
-250
t
AH
9, 10, 11
125
150
--
--
ns
Data Setup Time
-200
-250
t
DS
9, 10, 11
100
100
--
--
ns
Data Hold Time
-200
-250
t
DH
9, 10, 11
10
10
--
--
ns
Chip Enable Hold Time (WE controlled)
-200
-250
t
CH
9, 10, 11
0
0
--
--
ns
Write Enable to Write Setup Time (CE controlled)
-200
-250
t
WS
9, 10, 11
0
0
--
--
ns
Write Enable Hold Time (CE controlled)
-200
-250
t
WH
9, 10, 11
0
0
--
--
ns
Output Enable to Write Setup Tim
-200
-250
t
OES
9, 10, 11
0
0
--
--
ns
Output Enable Hold Time
-200
-250
t
OEH
9, 10, 11
0
0
--
--
ns
Write Cycle Time
1,2
-200
-250
t
WC
9, 10, 11
--
--
15
15
ms
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