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Электронный компонент: 7206FRPFS-15

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Memory
All data sheets are subject to change without notice
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
High-Speed Epi-CMOS (16K x 9-Bit)
7206F
2001 Maxwell Technologies
All rights reserved.
Parallel FIFO
12.19.01 Rev 3
1000572
I
7206F
F
EATURES
:
16K x 9-bit organization
R
AD
-P
AK
radiation-hardened against natural space radia-
tion
A total dose hardness:
- > 100 krad (Si), depending upon space mission
Excellent Single Event Effect
- SEL
TH
: > 100 MeV/mg/cm
2
- SEU
TH
: = 7 MeV/mg/cm
2
- SEU saturated cross section: 1.5E-5 cm
2
/bit
Asynchronous Read/Write operation
High speed CMOS epi technology
Retransmit capability
Propagation time (max access time):
- 15 ns, 20 ns, 30 ns, 40 ns, 50 ns
Status flag: empty, half-full, full
Fully expandable in both word depth and width
Bi-directional applications
Low power
Battery back-up operation
TTL compatible
Package: 28 pin R
AD
-P
AK
flat package
D
ESCRIPTION
:
Maxwell Technologies' 7206F high speed FIFO microcircuit
features a greater than 100 krad (Si) total dose tolerance,
depending upon space mission. It is organized such that the
data is read in the same sequential order that it was written.
Full and Empty flags are provided to prevent overflow and
underflow. The expansion logic allows unlimited expansion
capability in work size and depth with no timing penalties. Twin
address pointers automatically generate internal read and
write addresses, and automatically increment with the write
and read pin. The 7206F 9-bits wide data are used in data
communications applications where a parity bit for error
checking is necessary. The retransmit capability allows the
read pointer to be reset to its initial position without affecting
the write pointer.
Maxwell Technologies' patented R
AD
-P
AK
packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, R
AD
-P
AK
provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Class S.
Logic Diagram
Memory
2
All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
T
ABLE
1. 7206F P
INOUT
D
ESCRIPTION
P
IN
S
YMBOL
D
ESCRIPTION
1
W
Write Enable
2 - 6
I8, I3-I0
Inputs
7
XI
Expansion In
8
FF
Full Flag
9 - 13
Q0 - Q3, Q8
Outputs
14
GND
Ground
15
R
Read Enable
16 - 19
Q4 - Q7
Outputs
20
XO/HF
Expansion Out/Half Full Flag
21
EF
Empty Flag
22
RS
Reset
23
FL/RT
First Load/Retransmit
24 - 27
I7 - I4
Inputs
28
V
CC
Power Supply
T
ABLE
2. 7206F A
BSOLUTE
M
AXIMUM
R
ATINGS
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Positive Supply Voltage
V
CC
-0.3
7.0
V
Input or Output Voltage
V
IN
GND -0.3
V
CC
+0.3
V
Storage Temperature Range
T
S
-65
150
C
Operating Temperature Range
T
A
-55
125
C
T
ABLE
3. 7206F R
ECOMMENDED
O
PERATING
C
ONDITIONS
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Positive Supply Voltage
V
CC
4.5
5.5
V
High Level Input Voltage
V
IH
2.2
--
V
Low Level Voltage
V
IL
--
0.8
V
Thermal Impedance
JC
--
0.93
C/W
Operating Temperature Range
T
A
-55
125
C
Memory
3
All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
T
ABLE
4. 7206F DC E
LECTRICAL
C
HARACTERISTICS
(V
CC
= 5V 10%, T
A
= -55
TO
+125 C
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NIT
Operating Supply Current
-15
-20
-30
-40
-50
I
CCOP
--
--
--
--
--
165
160
150
140
130
mA
Standby Supply Current (R = W = RS = FLVRT = V
IH
)
I
CCSB
--
5
mA
Power Down Current (All Input = V
CC
)
I
CCPD
--
400
A
Input Leakage Current (0.4V < V
IN
< V
CC
)
I
LI
--
1
A
Output Leakage Current (R = V
IH
, 0.4V < V
OUT
< V
CC
)
I
LO
--
1
A
Input Low Voltage
1
1. V
IH
max = V
CC
+ 0.3V. V
IL
min = -0.3V or -1.0V pulse width 50 ns.
V
IL
--
0.8
V
Input High Voltage
1
V
IH
2.2
--
V
Output Low Voltage (V
CC
min, I
OL
= 8mA)
V
OL
--
0.4
V
Output High Voltage (V
CC
min, I
OH
= -2mA)
V
OH
2.4
--
V
Input Capacitance
2
2. Guaranteed by design.
C
IN
--
10
pF
Output Capacitance
2
C
OUT
--
10
pF
T
ABLE
5. 7206F T
IMING
C
HARACTERISTICS
1
(V
CC
= 5V 10%, T
A
= -55
TO
+125 C
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NITS
Read Cycle
Read Cycle Time
-15
-20
-30
-40
-50
t
RC
25
30
40
50
65
--
--
--
--
--
ns
Access Time
-15
-20
-30
-40
-50
t
A
--
--
--
--
--
15
20
30
40
50
ns
Memory
4
All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
Read Recovery Time
-15
-20
-30
-40
-50
t
RR
10
10
10
10
15
--
--
--
--
--
ns
Read Pulse Width
2
-15
-20
-30
-40
-50
t
RPW
15
20
30
40
50
--
--
--
--
--
ns
Read Low to Data Low-Z
3
-15
-20
-30
-40
-50
t
RLZ
0
0
5
5
5
--
--
--
--
--
ns
Write HIGH to Data Low-Z
3,4
-15
-20
-30
-40
-50
t
WLZ
3
3
5
5
5
--
--
--
--
--
ns
Data Valid from Read High
-15
-20
-30
-40
-50
t
DV
5
5
5
5
5
--
--
--
--
--
ns
Read High to Data Bus High-Z
3
-15
-20
-30
-40
-50
t
RHZ
--
--
--
--
--
15
15
20
25
30
ns
T
ABLE
5. 7206F T
IMING
C
HARACTERISTICS
1
(V
CC
= 5V 10%, T
A
= -55
TO
+125 C
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NITS
Memory
5
All data sheets are subject to change without notice
2001 Maxwell Technologies
All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
7206F
12.19.01 Rev 3
1000572
Write Cycle
Write Cycle Time
-15
-20
-30
-40
-50
t
WC
25
30
40
50
65
--
--
--
--
--
ns
Write Pulse Width
2
-15
-20
-30
-40
-50
t
WPW
15
20
30
40
50
--
--
--
--
--
ns
Write Recovery Time
-15
-20
-30
-40
-50
t
WR
10
10
10
10
15
--
--
--
--
--
ns
Data Set-up Time
-15
-20
-30
-40
-50
t
DS
9
12
18
24
30
--
--
--
--
--
ns
Data Hold Time
-15
-20
-30
-40
-50
t
DH
0
0
0
0
5
--
--
--
--
--
ns
Reset Cycle
Reset Cycle Time
-15
-20
-30
-40
-50
t
RSC
25
30
40
50
65
--
--
--
--
--
ns
Reset Pulse Width
2
-15
-20
-30
-40
-50
t
RS
15
20
30
40
50
--
--
--
--
--
ns
T
ABLE
5. 7206F T
IMING
C
HARACTERISTICS
1
(V
CC
= 5V 10%, T
A
= -55
TO
+125 C
UNLESS
OTHERWISE
SPECIFIED
)
P
ARAMETER
S
YMBOL
M
IN
M
AX
U
NITS