1N17
THRU
1N19
1.0 Amp Schottky
Barrier Rectifier
20 to 40 Volts
Features
High Current Capability
Low Power loss
High Efficiency
Low Forward Voltage Drop
Metal Silicon junction, majority carrier conduction
Maximum Ratings
Operating Temperature: -55
C to +125
C
Storage Temperature: -55
C to +125
C
Typical Thermal Resistance: 50
o
C/W junction to Ambient
For capacitive load. Derate current by 20%
MCC
Part Number
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum DC
Blocking
Voltage
1N17 20V 14V 20V
1N18 30V 21V 30V
1N19 40V 28V 40V
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Rectified Current I
(AV)
1.0A T
A
= 90
C
Peak Forward Surge
Current I
FSM
25A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
1N17
1N18
1N19
V
F
0.45V
0.55V
0.60V
I
FM
= 1.0A;
T
C
= 25
C
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
0.5mA
10mA
T
C
= 25
C
T
C
= 100
C
Typical Junction
Capacitance C
J
110pF
Measured at
1.0MHz, V
R
=4.0V
Note:
300 us pulse width, 1% duty cycle
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A
B
D
D
C
Cathode Mark
MIN MAX MIN MAX
A 0.116 0.140 2.90 3.50
B 0.091 0.102 2.30 2.60
C 0.020 0.024 0.50 0.60
D 0.787 ----- 20.00 -----
DIMENSIONS
DIM
INCHES
MM
NOTE
R-1
omponents
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M C C
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M C C
1N17 thru 1N19
FIG.1-FORWARD CURRENT DERATING CURVE
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
A
V
E
R
AG
E
F
O
R
W
AR
D
C
U
R
R
E
NT
AM
P
E
R
E
S
I
N
S
T
AN
T
A
NE
O
U
S
F
O
R
W
AR
D
C
U
R
R
E
N
T
(
AM
P
E
R
E
S
)
I
N
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
RR
EN
T
M
I
L
L
(
A
M
P
E
R
E
S
)
PEA
K
F
O
R
W
A
R
D S
U
R
G
E
CU
R
R
E
N
T
(
A
M
P
E
R
E
S
)
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
REVERSE VOLTAGE. VOLTS
T, PULSE DURATION ,sec.
PERCENT OF RATED PEAK REVERSE VOLTAGE%
NUMBER OF CYCLES AT 60Hz
LEAD TEMPERATURE ( C)
T =25 C
J
T =125 C
J
PULSE WIDTH=300 S
1% DUTY CYCLE
T =T MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
J
J
T =125 C
J
T =25 C
J
T =75 C
J
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
FIG.5-TYPICAL JUNCTION CAPACITANCE
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
J
U
NC
T
I
O
N
C
A
P
A
C
I
T
A
NC
E
(
p
F
)
TR
A
N
SI
E
N
T TH
E
R
M
A
L
I
M
P
E
DA
N
C
E
,
C
/
W
T =25 C
f=1.0MH
J
Z
Vsig=50mVp-p
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