ChipFind - документация

Электронный компонент: 1N755

Скачать:  PDF   ZIP
1N746
THRU
1N759
0.5W Silicon Planar
Zener Diodes
Features
Zener Voltage 3.3V to 12V
Silicon Planar Power Zener Diodes
Standards zener voltage tolerance is 10%, Add suffix "A" for
5% tolerance, other tolerances are available upon request
Maximum Ratings
Symbol Value Units
Zener Current See Table 1
Power Dissipation
@ T
A
=50
o
C P
tot
500 mW
Junction Temperature T
J
175
o
C
Storage Temperature
Range T
STG
-65 to 175
o
C
Electrical Characteristics @ 25
C Unless Otherwise Specified
Symbol Maximum Unit
Thermal resistance 300
o
C/W
Forward Voltage
@ I
F
=200mA V
F
1.5 V
NOTE:
1) Valid provided that a distance of 8mm from case are kept
at ambient temperature
2) Power derating: 4.0mW/
o
C above 50
o
C
Mechanical Data
Case: DO-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
www.
mccsemi
.com
A
B
C
D
D
Cathode
Mark
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.166
---
4.2
B
---
.079
---
2.00
C
---
.020
---
.52
D
1.000
---
25.40
---
DO-35
R
q
JA
omponents
21201 Itasca Street Chatsworth
!"#
$ % !"#
M C C
NORMAL
ZENER
VOLTAGE
Vz@ Izt
TEST
CURRENT
Izt
MAXIMUM
ZENER
IMPEDANCE
Zzt @ Izt
MAXIMUM REVERSE
LEAKAGE CURRENT
Ir @ Vr=1V
MAXIMUM
ZENER
CURRENT
I
ZM
TYPICAL TEMP.
COEFFICIENT
MCC PART
NUMBER
VOLTS mA OHMS uA @25
o
C uA @125
o
C mA %/
o
C
1N746 3.3 20 28 10 30 110 -.066
1N747 3.6 20 24 10 30 100 -.058
1N748 3.9 20 23 10 30 95 -.046
1N749 4.3 20 22 2 30 85 -.033
1N750 4.7 20 19 2 30 75 -.015
1N751 5.1 20 17 1 20 70 .010
1N752 5.6 20 11 1 20 65 +.030
1N753 6.2 20 7.0 0.1 20 60 +.049
1N754 6.8 20 5.0 0.1 20 55 +.053
1N755 7.5 20 6.0 0.1 20 50 +.057
1N756 8.2 20 8.0 0.1 20 45 +.060
1N757 9.1 20 10 0.1 20 40 +.061
1N758 10 20 17 0.1 20 35 +.062
1N759 12 20 30 0.1 20 30 +.062
Note:
1) Tested with pulses t
p
= 20ms
2) Valid provided that leads are kept at ambient temperature at a
distance of 8mm from case.
3) Zener impedance derived by superimposing on I
ZT
, a 60 cps, rms
ac current equal to 10% I
ZT
(2 mA ac)
4) Allowance has been made for the increase in V
Z
due to Z
Z
and for
the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 400mW.
www.
mccsemi
.com
M C C
1N746 thru 1N759