1N914(A)(B)
500mW 100 Volt
Silicon Epitaxial
Diodes
DO-35
)HDWXUHV
Low Current Leakage
Compression Bond Construction
Low Cost
DIMENSIONS
INCHES
MM
DIM MIN MAX MIN MAX NOTE
A --- .166
--- 4.2
B --- .079
--- 2.00
C --- .020
--- .52
D 1.000 --- 25.40 ---
0D[LPXP5DWLQJV
A
B
C
D
D
Cathode
Mark
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mccsemi
.com
omponents
21201 Itasca Street Chatsworth
!"#
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M C C
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Maximum Thermal Resistance; 300
O
C/W Junction To Ambient
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Maximum Repetitive
Reverse Voltage
V
RRM
100V
Average Rectified
Forward Current
I
O
200mA
Power Dissipation
P
D
500mW
Junction Temperature
T
J
150
O
C
Peak Forward Surge
Current
I
FSM
1.0A
4.0A
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
Minimum Breakdown
Voltage
V
R
100V
75V
I
R
=100uA,
I
R
=5.0uA
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
1N914 B
1N914 B
V
F
1.0V
720mV
T
J
= 25
O
C
I
FM
= 10mA;
I
FM
= 20mA;
I
FM
= 100mA;
I
FM
= 5.0mA;
Maximum Reverse
Current
I
R
25nA
5.0uA
50uA
V
R
=20V, T
J
=25
O
C,
V
R
=75V, T
J
=25
O
C,
V
R
=20V, T
J
=150
O
C
Typical Junction
Capacitance
C
J
4.0pF
Measured at 1.0MHz,
V
R
=0V
Reverse Recovery
Time
T
rr
4.0nS
I
F
=10mA
V
R
= 6V
R
L
=100 , I
rr
=1.0mA
*Pulse test: Pulse width 300 usec, Duty cycle 2%
Admissable Power Dissipation - MilliWatts versus
Ambient Temperature -
O
C
Figure 2
Forward De rating Curve
0
175
50
75
100
125
0
100
200
300
Single Phase, Half Wave
60Hz Resistive or Inductive Load
MilliWatts
O
C
150
400
500
600
Junction Capacitance - pF versus
Reverse Voltage - Volts
Figure 3
Junction Capacitance
.1
.2
1
.4
2
10
20
40
4
100
200
.1
.2
.6
1
2
10
pF
Volts
6
4
.4
400
1000
T
J
=25
O
C
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 1
Typical Forward Characteristics
4
6
20
10
MilliAmps
.4
.6
.8
1.0
1.2
1.4
.01
.02
.04
.06
.1
.2
.4
.6
1
2
25
O
C
Volts
1N914
1N914A
1N914B
1N914(A)(B)
www.
mccsemi
.com
M C C
1
100
4
0
200
400
600
8
Figure 5
Peak Forward Surge Current
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
MilliAmps
Cycles
2
6
10 20
60
80
40
800
1000
1200
Figure 4
Typical Reverse Characteristics
Instantaneous Reverse Leakage Current - NanoAmperes
versus Junction Temperature - C
T
J
40
60
200
100
NanoAmp
20
120
40
60
80
100
.1
.2
.4
.6
1
2
4
6
10
20
400
600
1000
140
1N914(A)(B)
O
www.
mccsemi
.com
M C C
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