Features
l
Through Hole TO-92 Package
l
Capable of 625mWatts of Power Dissipatio
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Marking:
2N4123 --------- 2N4123
2N4124 --------- 2N4124
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol Value
Unit
Collector-Emitter Voltage 2N4123
2N4124
V
CEO
30
25
V
Collector-Base Voltage 2N4123
2N4124
V
CBO
40
30
V
Emitter-Base Voltage 2N4123
2N4124
V
EBO
5
V
Collector Current(DC)
I
C
200
mA
Power Dissipation@T
A
=25
o
C P
d
625
5.0
mW
mW/
o
C
Power Dissipation@T
C
=25
o
C P
d
1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air 200
o
C/W
Thermal Resistance, Junction to
Case
83.3
o
C/W
Operating & Storage Temperature
T
j
, T
STG
-55~150
o
C
2N4123
2N4124
NPN Silicon General
Purpose Transistor
625mW
TO-92
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
A
E
B
C
D
G
DIMENSIONS
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Pin Configuration
Bottom View
C B
E
omponents
21201 Itasca Street Chatsworth
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ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IE= 0)
2N4123
2N4124
V(BR)CEO
30
25
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0)
2N4123
2N4124
V(BR)CBO
40
30
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
--
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
--
50
nAdc
ON CHARACTERISTICS(1)
DC Current Gain
(IC =2.0 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
hFE
50
120
--
--
Collector Emitter Saturation Voltage
(IC = 50mAdc, IB = 5.0 mAdc)
VCE(sat)
--
0.3
Vdc
BaseEmitter Saturation Voltage
(IC = 50mAdc, IB = 5.0 mAdc)
VBE(sat)
--
0.95
Vdc
2N4123
2N4124
2N4124
2N4123
60
25
SMALL-SIGNAL CHARACTERISTICS
!
2N4123
2N4124
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2N4123
.
/'/ !
2N4124
%
#(
-)01
/ !
2N4123
2N4124
'
'/ !
2N4123
"##
'%
$'
%
#(
"
+)
-
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.
'/'/ !
2N4124
")
2'
%'
*+3+4*+5
$+611*'7
2N4123
2N4124
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f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
RS, SOURCE RESISTANCE (k
)
0
NF
, NOISE FIGURE (dB)
1
2
4
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
14
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
, NOISE FIGURE (dB)
f = 1 kHz
IC = 1 mA
IC = 0.5 mA
IC = 50
m
A
IC = 100
m
A
SOURCE RESISTANCE = 200
W
IC = 1 mA
SOURCE RESISTANCE = 200
W
IC = 0.5 mA
SOURCE RESISTANCE = 500
W
IC = 100
m
A
SOURCE RESISTANCE = 1 k
IC = 50
m
A
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
IC, COLLECTOR CURRENT (mA)
h , OUTPUT
ADMITT
ANCE ( mhos)
30
100
50
5
10
20
oe
0.1
0.2
1.0
2.0
5.0
10
0.5
2
1
0.1
0.2
1.0
2.0
5.0
10
0.5
m
h
f
e
, CURREN
T
GAIN
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
IC, COLLECTOR CURRENT (mA)
200
1.0
TIME (ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
CAP
ACIT
ANCE (pF)
1.0
2.0 3.0
5.0 7.0 10
20 30 40
0.2 0.3
0.5 0.7
Cibo
Cobo
ts
td
tr
tf
VCC = 3 V
IC/IB = 10
VEB(off) = 0.5 V
Figure 1. Capacitance Figure 2. Switching Times
Figure 3. Frequency Variations
Figure 4. Source Resistance
Figure 5. Current Gain Figure 6. Qutput Admittance
2N4123
2N4124
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IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
h , VO
L
T
AGE FEEDBACK R
A
TIO (X 10 )
re
h ie
0.1
0.2
1.0
2.0
5.0
10
0.5
4
, INPU
T
IMPEDANCE (
k
)
IC, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT
GAIN (NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
VCE = 1 V
TJ = +125
C
+25
C
55
C
IB, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
IC = 1 mA
TJ = 25
C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
Figure 7. Input Impedance
Figure 9. DC Current Gain
Figure 8. Voltage Feedback Ratio
Figure 10. Collector Saturation Region
2N4123
2N4124
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IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
IC, COLLECTOR CURRENT (mA)
V
, VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
0
100
0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
200
1.0
1.5
2.0
200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1 V
+25
C to +125
C
55
C to +25
C
+25
C to +125
C
55
C to +25
C
q
VC for VCE(sat)
q
VB for VBE(sat)
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
Figure 11. "ON" Voltages
Figure 12. Temperature Coefficients
2N4123
2N4124
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