BAT86
SMALL SIGNAL
SCHOTTKY
DIODES
Features
For general purpose applications
These diodes features very low turn-on voltage and fast switching.
www.
mccsemi
.com
MECHANICAL DATA
Case: Do-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
ELECTRICAL CHARACTERISTICS
Dimensions in inches and (millimeters)
Symbols Value Units
Repetitive Peak Reverse Voltage
V
R
5
0 V
Forward Continuous Current at T =25
0
C I
F
2001) mA
Repetitive Peak Forward Current at t<1s,< 0.5,T
A
=25
0
C I
FRM
3001) mA
Power Dissipation at T
A
=65
0
C Ptot 2001) mW
Junction temperature T
J
125
0
C
Ambient Operating temperature Range T
A
-55~+125
0
C
Storage Temperature Range T
STG
-55~+150
0
C
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
Reverse breakdown voltage Tested with
10
A pulses
Leakage current V =25V
R
Forward voltage
Pulse Test
at
t 300 s, 2%
I =0.1mA,
at I =1mA,
at I =10mA,
at I =30mA,
at I =100mA
p
F
F
F
F
F
50
0.5
5
0.460 0.600
8
0.900
0.450
0.380
0.300
Thermal resistance junction to ambient Air
Junction Capacitance at V =1V ,f=1MHz
R
Reverse recovery time Form I =10mA,I =10mA,I =1mA
F
R
R
V
R)R
(B
V
V
V
V
V
V
A
pF
K/W
ns
V
F 0.200
V
F 0.272
V
F
V
F 0.365
V
F 0.700
I
R 0.2
C
J
trr
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
300
R
JA
These devices are protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharges.
These diode is also available in the Mini-MELF case with type
designation LL86
Metal-on-silicon Schottky barrier device which is protected by a PN
junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,and low logic applications.
omponents
21201 Itasca Street Chatsworth
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