BAV19W
THRU
BAV21W
410mW
Small Signal
Diodes
120 to 250 Volts
Features
Silicon Epitaxial Planar Diodes
For General Purpose
This diode is also available in other case.
Mechanical Data
Case: SOD-123, Molded Plastic
Weight: approx. 0.01g
Marking code: BAV19W=A8
BAV20W=T2
BAV21W=T3
Maximum Ratings
Symbol
Rating
Rating
Unit
V
R
Continuous Reverse Voltage BAV19W
BAV20W
BAV21W
100
150
200
V
V
RRM
Repetitive Peak Reverse Voltage BAV19W
BAV20W
BAV21W
120
200
250
V
I
F
Forward DC Current at Tamb=25
O
C
(1)
250
mA
I
F(AV)
Rectified Current (Average) Half Wave
Rectification with Resist. Load at
Tamb=25
O
C
(1)
200
mA
I
FRM
Repetitive Peak Forward Current at f>50Hz,
Tamb=25
O
C
(1)
625
mA
I
FSM
Surge Forward Current at t<1s, Tj=25
O
C
1.0
A
P
tot
Power Dissipation at Tamb=25
O
C
(1)
410
mW
R
JA
Thermal Resistance Junction to Ambient Air
375
mW
T
J
Junction Temperature
-55 to +150
O
C
T
STG
Storage Temperature
-55 to +150
O
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Min
Typ Max
Units
V
F
Forward Voltage (I
F
=100mA)
(I
F
=200mA)
---
---
---
---
1.00
1.25
V
I
R
Leakage Current
(V
R
=100V) BAV19W
(VR=100V, Tj=100
O
C) BAV19W
(V
R
=150V) BAV20W
(VR=150V, Tj=100
O
C) BAV20W
(V
R
=200V) BAV21W
(VR=200V, Tj=100
O
C) BAV21W
---
---
---
---
---
---
---
---
---
---
---
---
100
15
100
15
100
15
nA
uA
nA
uA
nA
uA
r
f
Dynamic Forward Resistance
(I
F
=10mA)
---
5.0
---
OHM
C
tot
Capacitance
(V
R
=0, f=1.0MHz)
---
1.5
---
pF
t
rr
Reverse Recovery Time
(I
F
=30mA, I
R
=30mA)
(Irr=3.0mA, R
L
=100OHMS)
---
---
50
ns
*(1) Valid provided that leads are kept at ambient temperature
DIMENSIONS
INCHES MM
DIM
MIN MAX MIN MAX
NOTE
A .140 .152 3.55 3.85
B .100 .112 2.55 2.85
C .055 .071 1.40 1.80
D ----- .053 ----- 1.35
E .012 .031 0.30 .78
G .006 ----- 0.15 -----
H ----- .01 ----- .25
J ----- .006 ----- .15
0.036"
0.093"
0.048"
SUGGESTED SOLDER
PAD LAYOUT
A
B
E
C
J
D
H
G
SOD123
omponents
21201 Itasca Street Chatsworth
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M C C
www.
mccsemi
.com
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