BAW56
350mW 75Volt
Dual Switching Diode
SOT-23
Suggested Solder
Pad Layout
Features
Low Current Leakage
Low Cost
Small Outline Surface Mount Package
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Maximum Ratings
Operating Temperature: -55
C to +150
C
Storage Temperature: -55
C to +150
C
Maximum Thermal Resistance; 357K/W Junction To Ambient
Electrical Characteristics @ 25
C Unless Otherwise Specified
Reverse Voltage
V
R
75V
Average Rectified
Output Current
I
O
150mA
Power Dissipation
P
TOT
350mW
Peak Forward Surge
Current
I
FSM
1.0A t=1s,
Non-Repetitive
Maximum
Instantaneous
Forward Voltage
V
F
855mV
I
FM
= 10mA;
T
J
= 25
C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I
R
2.5
A
50
A
V
R
=75Volts
T
J
= 25
C
T
J
= 150
C
Typical Junction
Capacitance
C
J
2pF
Measured at
1.0MHz, V
R
=0V
Reverse Recovery
Time
T
rr
4nS I
F
=10mA
V
R
= 0V
R
L
=500
*Pulse test: Pulse width 300
sec, Duty cycle 2%
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
A 1
A
C
C
Pin Configuration
Top View
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omponents
21201 Itasca Street Chatsworth
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M C C
BAW56
www.
mccsemi
.com
M C C
1
10
100
1000
10,000
0
100
200
I
,
LEAKAGE
CURRENT
(nA)
R
T , JUNCTION TEMPERATURE (C)
Fig. 2 Leakage Current vs Junction Temperature
j
V = 20V
R
10
1.0
100
1000
0.1
0.01
0
1
2
I
,
INST
ANT
ANE
O
US
F
O
R
W
ARD
CURRENT
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Characteristics
F
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