Features
l
Ideally Suited for Automatic Insertion
l
150
o
C Junction Temperature
l
Low Current, Low Voltage
l
Epitaxial Planar Die Construction
Mechanical Data
l
Case: SOT-23, Molded Plastic
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Marking: EH
l
Weight: 0.008 grams ( approx.)
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage V
CEO
45 V
Collector-Base Voltage V
CBO
75 V
Emitter-Base Voltage V
EBO
5 V
Collector Current(DC) I
C
800 mA
Peak Collector Current I
CM
1000 mA
Base Current(DC) I
B
100 mA
Peak Base Current I
BM
200 mA
Power Dissipation@T
s
=79
o
C P
d
330 mW
Thermal Resistance, Junction to
Ambient Air 285
(1) o
C/W
Thermal Resistance, Junction to
Soldering Point
215
o
C/W
Operating & Storage Temperature T
j
, T
STG
-55~150
o
C
Notes:
(1) Mounted on FR-4 printed-circuit board
BCW66H
NPN Small
Signal Transistor
330mW
www.
mccsemi
.com
R
JA
R
JS
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
A
B
C
D
E
F
G
H
J
SOT-23
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
M C C
www.
mccsemi
.com
M C C
BCW66H
Electrical Characteristics
Ratings at 25C ambient temperature unless otherwise specified.
Parameter
Symbol
Min.
TYP.
Max.
Unit
DC Current Gain
(1)
at V
CE
= 10V, I
C
= 100
A
h
FE
80
at V
CE
= 1V, I
C
= 10mA h
FE
18
0
at V
CE
= 1V, I
C
= 100mA h
FE
250 630
at V
CE
= 2V, I
C
= 500mA h
FE
Collector-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
V
CEsat
0.3
V
at I
C
= 500mA, I
B
= 50mA
V
CEsat
0.7
V
Base-Emitter Saturation Voltage
(1)
at I
C
= 100mA, I
B
= 10mA
V
BEsat
1.25
V
at I
C
= 500mA, I
B
= 50mA
V
BEsat
2
V
Collector-Emitter Breakdown Voltage
at I
C
= 10mA, I
B
= 0
V(
BR)CEO
45
V
Collector-Base Breakdown Voltage
at I
C
= 10
A, I
B
= 0
V(
BR)CBO
75
V
Emitter-Base Breakdown Voltage
at I
E
= 10
A, I
C
= 0
V(
BR)EBO
5
V
Collector-Base Cut-off Current
at V
CB
= 45V, I
E
= 0
I
CBO
20
nA
at V
CB
= 45V, I
E
= 0, T
A
= 150C
I
CBO
20
A
Emitter-Base Cut-off Current
at V
EB
= 4V, I
C
= 0
I
EBO
20
nA
Gain-Bandwidth Product
at V
CE
= 10V, I
C
= 20mA, f = 100MHz f
T
100 MH
Z
Collector-Base Capacitance
at V
CB
= 10V, f = 1MHz
C
CB
6
pF
Emitter-Base Capacitance
at V
EB
= 0.5V, f = 1MHz
C
EB
60
pF
Note: (1) Pulse test: t
300
s, D = 2%
100
PDF 
ZIP